InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping

T. C. Wen; S. J. Chang; Y. K. Su; L. W. Wu; C. H. Kuo; W. C. Lai; J. K. Sheu; T. Y. Tsai

doi:10.1007/s11664-003-0170-7

InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping

T. C. Wen, S. J. Chang, Y. K. Su, L. W. Wu, C. H. Kuo, W. C. Lai, J. K. Sheu, T. Y. Tsai

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

High-quality InGaN/GaN multiple-quantum well (MQW) light-emitting diode (LED) structures were prepared by a temperature-ramping method during metal-organic chemical-vapor deposition (MOCVD) growth. Two photoluminescence (PL) peaks, one originating from well-sensitive emission and one originating from an InGaN quasi-wetting layer on the GaN-barrier surface, were observed at room temperature (RT). The observation of high-order double-crystal x-ray diffraction (DCXRD) satellite peaks indicates that the interfaces between InGaN-well layers and GaN-barrier layers were not degraded as we increased the growth temperature of the GaN-barrier layers. With a 20-mA and 160-mA current injection, it was found that the output power could reach 2.2 mW and 8.9 mW, respectively. Furthermore, it was found that the reliability of the fabricated green LEDs prepared by temperature ramping was also reasonably good.

Original language	English
Pages (from-to)	419-422
Number of pages	4
Journal	Journal of Electronic Materials
Volume	32
Issue number	5
DOIs	https://doi.org/10.1007/s11664-003-0170-7
Publication status	Published - 2003 May

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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@article{35bf2d8950b849b7ae76adabb747d0ab,

title = "InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping",

abstract = "High-quality InGaN/GaN multiple-quantum well (MQW) light-emitting diode (LED) structures were prepared by a temperature-ramping method during metal-organic chemical-vapor deposition (MOCVD) growth. Two photoluminescence (PL) peaks, one originating from well-sensitive emission and one originating from an InGaN quasi-wetting layer on the GaN-barrier surface, were observed at room temperature (RT). The observation of high-order double-crystal x-ray diffraction (DCXRD) satellite peaks indicates that the interfaces between InGaN-well layers and GaN-barrier layers were not degraded as we increased the growth temperature of the GaN-barrier layers. With a 20-mA and 160-mA current injection, it was found that the output power could reach 2.2 mW and 8.9 mW, respectively. Furthermore, it was found that the reliability of the fabricated green LEDs prepared by temperature ramping was also reasonably good.",

author = "Wen, {T. C.} and Chang, {S. J.} and Su, {Y. K.} and Wu, {L. W.} and Kuo, {C. H.} and Lai, {W. C.} and Sheu, {J. K.} and Tsai, {T. Y.}",

note = "Funding Information: This work was supported by the National Science Council under Contract No. NSC-89-2215-E-006-095.",

year = "2003",

month = may,

doi = "10.1007/s11664-003-0170-7",

language = "English",

volume = "32",

pages = "419--422",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "5",

}

TY - JOUR

T1 - InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping

AU - Wen, T. C.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Wu, L. W.

AU - Kuo, C. H.

AU - Lai, W. C.

AU - Sheu, J. K.

AU - Tsai, T. Y.

N1 - Funding Information: This work was supported by the National Science Council under Contract No. NSC-89-2215-E-006-095.

PY - 2003/5

Y1 - 2003/5

N2 - High-quality InGaN/GaN multiple-quantum well (MQW) light-emitting diode (LED) structures were prepared by a temperature-ramping method during metal-organic chemical-vapor deposition (MOCVD) growth. Two photoluminescence (PL) peaks, one originating from well-sensitive emission and one originating from an InGaN quasi-wetting layer on the GaN-barrier surface, were observed at room temperature (RT). The observation of high-order double-crystal x-ray diffraction (DCXRD) satellite peaks indicates that the interfaces between InGaN-well layers and GaN-barrier layers were not degraded as we increased the growth temperature of the GaN-barrier layers. With a 20-mA and 160-mA current injection, it was found that the output power could reach 2.2 mW and 8.9 mW, respectively. Furthermore, it was found that the reliability of the fabricated green LEDs prepared by temperature ramping was also reasonably good.

AB - High-quality InGaN/GaN multiple-quantum well (MQW) light-emitting diode (LED) structures were prepared by a temperature-ramping method during metal-organic chemical-vapor deposition (MOCVD) growth. Two photoluminescence (PL) peaks, one originating from well-sensitive emission and one originating from an InGaN quasi-wetting layer on the GaN-barrier surface, were observed at room temperature (RT). The observation of high-order double-crystal x-ray diffraction (DCXRD) satellite peaks indicates that the interfaces between InGaN-well layers and GaN-barrier layers were not degraded as we increased the growth temperature of the GaN-barrier layers. With a 20-mA and 160-mA current injection, it was found that the output power could reach 2.2 mW and 8.9 mW, respectively. Furthermore, it was found that the reliability of the fabricated green LEDs prepared by temperature ramping was also reasonably good.

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U2 - 10.1007/s11664-003-0170-7

DO - 10.1007/s11664-003-0170-7

M3 - Article

AN - SCOPUS:0038325609

VL - 32

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

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