Abstract
High-quality InGaN/GaN multiple-quantum well (MQW) light-emitting diode (LED) structures were prepared by a temperature-ramping method during metal-organic chemical-vapor deposition (MOCVD) growth. Two photoluminescence (PL) peaks, one originating from well-sensitive emission and one originating from an InGaN quasi-wetting layer on the GaN-barrier surface, were observed at room temperature (RT). The observation of high-order double-crystal x-ray diffraction (DCXRD) satellite peaks indicates that the interfaces between InGaN-well layers and GaN-barrier layers were not degraded as we increased the growth temperature of the GaN-barrier layers. With a 20-mA and 160-mA current injection, it was found that the output power could reach 2.2 mW and 8.9 mW, respectively. Furthermore, it was found that the reliability of the fabricated green LEDs prepared by temperature ramping was also reasonably good.
| Original language | English |
|---|---|
| Pages (from-to) | 419-422 |
| Number of pages | 4 |
| Journal | Journal of Electronic Materials |
| Volume | 32 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2003 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping. / Wen, Ten-Chin; Chang, Shoou-Jinn; Su, Y. K.; Wu, L. W.; Kuo, C. H.; Lai, Wei-Chi; Sheu, Jinn-Kong; Tsai, T. Y.
In: Journal of Electronic Materials, Vol. 32, No. 5, 01.01.2003, p. 419-422.Research output: Contribution to journal › Article
TY - JOUR
T1 - InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping
AU - Wen, Ten-Chin
AU - Chang, Shoou-Jinn
AU - Su, Y. K.
AU - Wu, L. W.
AU - Kuo, C. H.
AU - Lai, Wei-Chi
AU - Sheu, Jinn-Kong
AU - Tsai, T. Y.
PY - 2003/1/1
Y1 - 2003/1/1
N2 - High-quality InGaN/GaN multiple-quantum well (MQW) light-emitting diode (LED) structures were prepared by a temperature-ramping method during metal-organic chemical-vapor deposition (MOCVD) growth. Two photoluminescence (PL) peaks, one originating from well-sensitive emission and one originating from an InGaN quasi-wetting layer on the GaN-barrier surface, were observed at room temperature (RT). The observation of high-order double-crystal x-ray diffraction (DCXRD) satellite peaks indicates that the interfaces between InGaN-well layers and GaN-barrier layers were not degraded as we increased the growth temperature of the GaN-barrier layers. With a 20-mA and 160-mA current injection, it was found that the output power could reach 2.2 mW and 8.9 mW, respectively. Furthermore, it was found that the reliability of the fabricated green LEDs prepared by temperature ramping was also reasonably good.
AB - High-quality InGaN/GaN multiple-quantum well (MQW) light-emitting diode (LED) structures were prepared by a temperature-ramping method during metal-organic chemical-vapor deposition (MOCVD) growth. Two photoluminescence (PL) peaks, one originating from well-sensitive emission and one originating from an InGaN quasi-wetting layer on the GaN-barrier surface, were observed at room temperature (RT). The observation of high-order double-crystal x-ray diffraction (DCXRD) satellite peaks indicates that the interfaces between InGaN-well layers and GaN-barrier layers were not degraded as we increased the growth temperature of the GaN-barrier layers. With a 20-mA and 160-mA current injection, it was found that the output power could reach 2.2 mW and 8.9 mW, respectively. Furthermore, it was found that the reliability of the fabricated green LEDs prepared by temperature ramping was also reasonably good.
UR - http://www.scopus.com/inward/record.url?scp=0038325609&partnerID=8YFLogxK
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U2 - 10.1007/s11664-003-0170-7
DO - 10.1007/s11664-003-0170-7
M3 - Article
AN - SCOPUS:0038325609
VL - 32
SP - 419
EP - 422
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 5
ER -