InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping

Ten-Chin Wen, Shoou-Jinn Chang, Y. K. Su, L. W. Wu, C. H. Kuo, Wei-Chi Lai, Jinn-Kong Sheu, T. Y. Tsai

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

High-quality InGaN/GaN multiple-quantum well (MQW) light-emitting diode (LED) structures were prepared by a temperature-ramping method during metal-organic chemical-vapor deposition (MOCVD) growth. Two photoluminescence (PL) peaks, one originating from well-sensitive emission and one originating from an InGaN quasi-wetting layer on the GaN-barrier surface, were observed at room temperature (RT). The observation of high-order double-crystal x-ray diffraction (DCXRD) satellite peaks indicates that the interfaces between InGaN-well layers and GaN-barrier layers were not degraded as we increased the growth temperature of the GaN-barrier layers. With a 20-mA and 160-mA current injection, it was found that the output power could reach 2.2 mW and 8.9 mW, respectively. Furthermore, it was found that the reliability of the fabricated green LEDs prepared by temperature ramping was also reasonably good.

Original languageEnglish
Pages (from-to)419-422
Number of pages4
JournalJournal of Electronic Materials
Volume32
Issue number5
DOIs
Publication statusPublished - 2003 Jan 1

Fingerprint

Semiconductor quantum wells
Light emitting diodes
light emitting diodes
quantum wells
barrier layers
Organic Chemicals
Organic chemicals
Growth temperature
Temperature
wetting
metalorganic chemical vapor deposition
temperature
Wetting
Chemical vapor deposition
Photoluminescence
x ray diffraction
Diffraction
Metals
Satellites
injection

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping",
abstract = "High-quality InGaN/GaN multiple-quantum well (MQW) light-emitting diode (LED) structures were prepared by a temperature-ramping method during metal-organic chemical-vapor deposition (MOCVD) growth. Two photoluminescence (PL) peaks, one originating from well-sensitive emission and one originating from an InGaN quasi-wetting layer on the GaN-barrier surface, were observed at room temperature (RT). The observation of high-order double-crystal x-ray diffraction (DCXRD) satellite peaks indicates that the interfaces between InGaN-well layers and GaN-barrier layers were not degraded as we increased the growth temperature of the GaN-barrier layers. With a 20-mA and 160-mA current injection, it was found that the output power could reach 2.2 mW and 8.9 mW, respectively. Furthermore, it was found that the reliability of the fabricated green LEDs prepared by temperature ramping was also reasonably good.",
author = "Ten-Chin Wen and Shoou-Jinn Chang and Su, {Y. K.} and Wu, {L. W.} and Kuo, {C. H.} and Wei-Chi Lai and Jinn-Kong Sheu and Tsai, {T. Y.}",
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InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping. / Wen, Ten-Chin; Chang, Shoou-Jinn; Su, Y. K.; Wu, L. W.; Kuo, C. H.; Lai, Wei-Chi; Sheu, Jinn-Kong; Tsai, T. Y.

In: Journal of Electronic Materials, Vol. 32, No. 5, 01.01.2003, p. 419-422.

Research output: Contribution to journalArticle

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T1 - InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping

AU - Wen, Ten-Chin

AU - Chang, Shoou-Jinn

AU - Su, Y. K.

AU - Wu, L. W.

AU - Kuo, C. H.

AU - Lai, Wei-Chi

AU - Sheu, Jinn-Kong

AU - Tsai, T. Y.

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Y1 - 2003/1/1

N2 - High-quality InGaN/GaN multiple-quantum well (MQW) light-emitting diode (LED) structures were prepared by a temperature-ramping method during metal-organic chemical-vapor deposition (MOCVD) growth. Two photoluminescence (PL) peaks, one originating from well-sensitive emission and one originating from an InGaN quasi-wetting layer on the GaN-barrier surface, were observed at room temperature (RT). The observation of high-order double-crystal x-ray diffraction (DCXRD) satellite peaks indicates that the interfaces between InGaN-well layers and GaN-barrier layers were not degraded as we increased the growth temperature of the GaN-barrier layers. With a 20-mA and 160-mA current injection, it was found that the output power could reach 2.2 mW and 8.9 mW, respectively. Furthermore, it was found that the reliability of the fabricated green LEDs prepared by temperature ramping was also reasonably good.

AB - High-quality InGaN/GaN multiple-quantum well (MQW) light-emitting diode (LED) structures were prepared by a temperature-ramping method during metal-organic chemical-vapor deposition (MOCVD) growth. Two photoluminescence (PL) peaks, one originating from well-sensitive emission and one originating from an InGaN quasi-wetting layer on the GaN-barrier surface, were observed at room temperature (RT). The observation of high-order double-crystal x-ray diffraction (DCXRD) satellite peaks indicates that the interfaces between InGaN-well layers and GaN-barrier layers were not degraded as we increased the growth temperature of the GaN-barrier layers. With a 20-mA and 160-mA current injection, it was found that the output power could reach 2.2 mW and 8.9 mW, respectively. Furthermore, it was found that the reliability of the fabricated green LEDs prepared by temperature ramping was also reasonably good.

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