InGaN/GaN multiquantum-well metal-semiconductor-metal photodetectors with beta-Ga2O3 cap layerslayers

Zheng Da Huang, Wen Yin Weng, Shoou Jinn Chang, Yuan Fu Hua, Chiu Jung Chiu, Ting Jen Hsueh, San Lein Wu

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

InGaN/GaN multiquantum-well (MQW) metalsemiconductor- metal photodetectors with a beta-Ga2O3 cap layer formed by the furnace oxidation of a GaN epitaxial layer are fabricated and characterized. The beta-Ga2O3 cap layer is found to suppress the reverse leakage current by at least about two orders of magnitude with a 5-V applied bias because it creates a thicker and higher potential barrier. The reverse leakage current can be further reduced and a 90-fold larger ultraviolet-to- visible rejection ratio can be achieved by using InGaN/GaN MQW layers, which confine the electron-hole pairs generated by lower-energy photons. In addition, the noise level is reduced and detectivity is increased. With a 5-V applied bias, the noise-equivalent power and normalized detectivity are 8.4×10-13 W and 7.9×1012 cm Hz0.5 W-1, respectively.

Original languageEnglish
Article number6361447
Pages (from-to)1187-1191
Number of pages5
JournalIEEE Sensors Journal
Volume13
Issue number4
DOIs
Publication statusPublished - 2013 Feb 18

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

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    Huang, Z. D., Weng, W. Y., Chang, S. J., Hua, Y. F., Chiu, C. J., Hsueh, T. J., & Wu, S. L. (2013). InGaN/GaN multiquantum-well metal-semiconductor-metal photodetectors with beta-Ga2O3 cap layerslayers. IEEE Sensors Journal, 13(4), 1187-1191. [6361447]. https://doi.org/10.1109/JSEN.2012.2230113