InGaN/GaN single-quantum-well microdisks

Yu Chi Hsu; Ikai Lo; Cheng Hung Shih; Wen Yuan Pang; Chia Hsuan Hu; Ying Chieh Wang; Mitch M.C. Chou

doi:10.1063/1.4729007

InGaN/GaN single-quantum-well microdisks

Yu Chi Hsu
, Ikai Lo
, Cheng Hung Shih
, Wen Yuan Pang
, Chia Hsuan Hu
, Ying Chieh Wang
, Mitch M.C. Chou

Program on Key Materials

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

We have grown In _xGa _1-xN/GaN quantum wells atop GaN microdisk with γ-LiAlO ₂ substrate by using plasma-assisted molecular beam epitaxy. The structural and optical properties of the samples were analyzed by transmission electron microscopy, x-ray diffraction, cathodoluminescence, and photoluminescence measurements. Based on the measured results, we obtained the indium concentration of the In _xGa _1-xN/GaN single quantum well to be x = 0.25 with a band-gap energy of 2.31 eV, which is consistent with the bowing effect of bulk In _xGa _1-xN: E _g(x) [3.42 - x* 2.65 - x* (1 - x) * 2.4] eV.

Original language	English
Article number	242101
Journal	Applied Physics Letters
Volume	100
Issue number	24
DOIs	https://doi.org/10.1063/1.4729007
Publication status	Published - 2012 Jun 11

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4729007

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title = "InGaN/GaN single-quantum-well microdisks",

abstract = "We have grown In xGa 1-xN/GaN quantum wells atop GaN microdisk with γ-LiAlO 2 substrate by using plasma-assisted molecular beam epitaxy. The structural and optical properties of the samples were analyzed by transmission electron microscopy, x-ray diffraction, cathodoluminescence, and photoluminescence measurements. Based on the measured results, we obtained the indium concentration of the In xGa 1-xN/GaN single quantum well to be x = 0.25 with a band-gap energy of 2.31 eV, which is consistent with the bowing effect of bulk In xGa 1-xN: E g(x) [3.42 - x* 2.65 - x* (1 - x) * 2.4] eV.",

author = "Hsu, \{Yu Chi\} and Ikai Lo and Shih, \{Cheng Hung\} and Pang, \{Wen Yuan\} and Hu, \{Chia Hsuan\} and Wang, \{Ying Chieh\} and Chou, \{Mitch M.C.\}",

year = "2012",

month = jun,

day = "11",

doi = "10.1063/1.4729007",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Inc.",

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TY - JOUR

T1 - InGaN/GaN single-quantum-well microdisks

AU - Hsu, Yu Chi

AU - Lo, Ikai

AU - Shih, Cheng Hung

AU - Pang, Wen Yuan

AU - Hu, Chia Hsuan

AU - Wang, Ying Chieh

AU - Chou, Mitch M.C.

PY - 2012/6/11

Y1 - 2012/6/11

N2 - We have grown In xGa 1-xN/GaN quantum wells atop GaN microdisk with γ-LiAlO 2 substrate by using plasma-assisted molecular beam epitaxy. The structural and optical properties of the samples were analyzed by transmission electron microscopy, x-ray diffraction, cathodoluminescence, and photoluminescence measurements. Based on the measured results, we obtained the indium concentration of the In xGa 1-xN/GaN single quantum well to be x = 0.25 with a band-gap energy of 2.31 eV, which is consistent with the bowing effect of bulk In xGa 1-xN: E g(x) [3.42 - x* 2.65 - x* (1 - x) * 2.4] eV.

AB - We have grown In xGa 1-xN/GaN quantum wells atop GaN microdisk with γ-LiAlO 2 substrate by using plasma-assisted molecular beam epitaxy. The structural and optical properties of the samples were analyzed by transmission electron microscopy, x-ray diffraction, cathodoluminescence, and photoluminescence measurements. Based on the measured results, we obtained the indium concentration of the In xGa 1-xN/GaN single quantum well to be x = 0.25 with a band-gap energy of 2.31 eV, which is consistent with the bowing effect of bulk In xGa 1-xN: E g(x) [3.42 - x* 2.65 - x* (1 - x) * 2.4] eV.

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UR - https://www.scopus.com/pages/publications/84863304180#tab=citedBy

U2 - 10.1063/1.4729007

DO - 10.1063/1.4729007

M3 - Article

AN - SCOPUS:84863304180

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 242101

ER -

InGaN/GaN single-quantum-well microdisks

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