InGaN/GaN tunnel-injection blue light-emitting diodes

T. C. Wen, S. J. Chang, L. W. Wu, Y. K. Su, W. C. Lai, C. H. Kuo, C. H. Chen, J. K. Sheu, J. F. Chen

Research output: Contribution to journalArticlepeer-review

56 Citations (Scopus)

Abstract

A charge asymmetric resonance tunneling (CART) structure was applied to nitride-based blue light emitting diodes (LEDs) to enhance their output efficiency. It was found that with a 20-nm-thick In0.18Ga0.82N electron emitter layer, we could increase the LED output intensity from 28.3 minicandela (mcd) to 43.2 mcd (i.e., a 53% increase). However, a further increase in electron emitter layer thickness will reduce the intensity due to relaxation. It was also found that we could decrease the 20 mA forward voltage from 4.16 V to 3.58 V with a proper electron emitter layer.

Original languageEnglish
Pages (from-to)1093-1095
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume49
Issue number6
DOIs
Publication statusPublished - 2002 Jun

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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