InGaN/GaN tunnel-injection blue light-emitting diodes

T. C. Wen; S. J. Chang; L. W. Wu; Y. K. Su; W. C. Lai; C. H. Kuo; C. H. Chen; J. K. Sheu; J. F. Chen

doi:10.1109/TED.2002.1003762

InGaN/GaN tunnel-injection blue light-emitting diodes

T. C. Wen, S. J. Chang, L. W. Wu, Y. K. Su, W. C. Lai, C. H. Kuo, C. H. Chen, J. K. Sheu, J. F. Chen

Research output: Contribution to journal › Article › peer-review

57 Citations (Scopus)

Abstract

A charge asymmetric resonance tunneling (CART) structure was applied to nitride-based blue light emitting diodes (LEDs) to enhance their output efficiency. It was found that with a 20-nm-thick In_0.18Ga_0.82N electron emitter layer, we could increase the LED output intensity from 28.3 minicandela (mcd) to 43.2 mcd (i.e., a 53% increase). However, a further increase in electron emitter layer thickness will reduce the intensity due to relaxation. It was also found that we could decrease the 20 mA forward voltage from 4.16 V to 3.58 V with a proper electron emitter layer.

Original language	English
Pages (from-to)	1093-1095
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	49
Issue number	6
DOIs	https://doi.org/10.1109/TED.2002.1003762
Publication status	Published - 2002 Jun

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2002.1003762

Cite this

@article{cb09d5d79e2e4059b5d7c8dc0b01ee09,

title = "InGaN/GaN tunnel-injection blue light-emitting diodes",

abstract = "A charge asymmetric resonance tunneling (CART) structure was applied to nitride-based blue light emitting diodes (LEDs) to enhance their output efficiency. It was found that with a 20-nm-thick In0.18Ga0.82N electron emitter layer, we could increase the LED output intensity from 28.3 minicandela (mcd) to 43.2 mcd (i.e., a 53% increase). However, a further increase in electron emitter layer thickness will reduce the intensity due to relaxation. It was also found that we could decrease the 20 mA forward voltage from 4.16 V to 3.58 V with a proper electron emitter layer.",

author = "Wen, {T. C.} and Chang, {S. J.} and Wu, {L. W.} and Su, {Y. K.} and Lai, {W. C.} and Kuo, {C. H.} and Chen, {C. H.} and Sheu, {J. K.} and Chen, {J. F.}",

note = "Funding Information: Manuscript received November 27, 2001; revised February 19, 2002. This work was supported by the National Science Council, Taiwan, R.O.C., under Contract NSC-89-2215-E-006-095. The review of this brief was arranged by Editor P. Bhattacharya.",

year = "2002",

month = jun,

doi = "10.1109/TED.2002.1003762",

language = "English",

volume = "49",

pages = "1093--1095",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - InGaN/GaN tunnel-injection blue light-emitting diodes

AU - Wen, T. C.

AU - Chang, S. J.

AU - Wu, L. W.

AU - Su, Y. K.

AU - Lai, W. C.

AU - Kuo, C. H.

AU - Chen, C. H.

AU - Sheu, J. K.

AU - Chen, J. F.

N1 - Funding Information: Manuscript received November 27, 2001; revised February 19, 2002. This work was supported by the National Science Council, Taiwan, R.O.C., under Contract NSC-89-2215-E-006-095. The review of this brief was arranged by Editor P. Bhattacharya.

PY - 2002/6

Y1 - 2002/6

N2 - A charge asymmetric resonance tunneling (CART) structure was applied to nitride-based blue light emitting diodes (LEDs) to enhance their output efficiency. It was found that with a 20-nm-thick In0.18Ga0.82N electron emitter layer, we could increase the LED output intensity from 28.3 minicandela (mcd) to 43.2 mcd (i.e., a 53% increase). However, a further increase in electron emitter layer thickness will reduce the intensity due to relaxation. It was also found that we could decrease the 20 mA forward voltage from 4.16 V to 3.58 V with a proper electron emitter layer.

AB - A charge asymmetric resonance tunneling (CART) structure was applied to nitride-based blue light emitting diodes (LEDs) to enhance their output efficiency. It was found that with a 20-nm-thick In0.18Ga0.82N electron emitter layer, we could increase the LED output intensity from 28.3 minicandela (mcd) to 43.2 mcd (i.e., a 53% increase). However, a further increase in electron emitter layer thickness will reduce the intensity due to relaxation. It was also found that we could decrease the 20 mA forward voltage from 4.16 V to 3.58 V with a proper electron emitter layer.

UR - http://www.scopus.com/inward/record.url?scp=0036609957&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036609957&partnerID=8YFLogxK

U2 - 10.1109/TED.2002.1003762

DO - 10.1109/TED.2002.1003762

M3 - Article

AN - SCOPUS:0036609957

SN - 0018-9383

VL - 49

SP - 1093

EP - 1095

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

ER -

InGaN/GaN tunnel-injection blue light-emitting diodes

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this