InGaN/GaN vertical light-emitting diodes with diamondlike carbon/titanium heat-spreading layers

Pai Yang Tsai, Hou Kuei Huang, Chien Min Sung, Ming Chi Kan, Yeong-Her Wang

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Vertical light-emitting diodes (VLEDs) with diamondlike carbon/titanium (DLC/Ti) heat-spreading layers on silicon (Si) substrates are investigated. Good thermal conductivity coupled with a thermal expansion coefficient similar to that of gallium nitride enables DLC/Ti to enhance heat dissipation via the Si substrate for Si-bonded VLEDs. The relative light intensity of VLEDs with DLC/Ti operating at 1 A is 10% greater than that of VLEDs without DLC/Ti. The output power droop can be further improved. A slight red shift of 0.5 nm occurs when the injection current is increased from 0.7 to 1 A. VLEDs with DLC/Ti also have lower and more uniform surface temperatures than VLEDs without DLC/Ti. The measured thermal resistance of VLEDs with and without DLC/Ti is 0.63 and 1.51 K/W at an injection current of 350 mA, respectively. This observation shows that the proposed DLC/Ti heat-spreading layer facilitates efficient thermal management in VLEDs.

Original languageEnglish
Article number6547651
Pages (from-to)1029-1031
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number8
DOIs
Publication statusPublished - 2013 Jun 28

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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