InGaP GaAs multiquantum barrier structures prepared by low-pressure organometallic vapor phase epitaxy

Hung Pin Shiao; Chi Yu Wang; Yuan Kuang Tu; Wei Lin; Ching Ting Lee

doi:10.1016/0038-1101(95)00071-Z

InGaP GaAs multiquantum barrier structures prepared by low-pressure organometallic vapor phase epitaxy

Hung Pin Shiao, Chi Yu Wang, Yuan Kuang Tu, Wei Lin, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

An InGaP GaAs superlattice with multiquantum barrier (MQB) effect was demonstrated by low-pressure organometallic vapor phase epitaxial technique. Two types of n-i-n tunnel diodes with either InGaP GaAs MQB barrier or bulk InGaP barrier were fabricated for comparison. The current-voltage characteristics show that the turn on voltage in the MQB barrier sample is higher than that in the bulk barrier sample. The experimentally measured effective barrier height of the MQB is about 1.8 times that of the bulk barrier, and this value is in quite good agreement with the value, 1.93, theoretically calculated by the transfer matrix method.

Original language	English
Pages (from-to)	2001-2004
Number of pages	4
Journal	Solid State Electronics
Volume	38
Issue number	12
DOIs	https://doi.org/10.1016/0038-1101(95)00071-Z
Publication status	Published - 1995 Dec

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/0038-1101(95)00071-Z

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title = "InGaP GaAs multiquantum barrier structures prepared by low-pressure organometallic vapor phase epitaxy",

abstract = "An InGaP GaAs superlattice with multiquantum barrier (MQB) effect was demonstrated by low-pressure organometallic vapor phase epitaxial technique. Two types of n-i-n tunnel diodes with either InGaP GaAs MQB barrier or bulk InGaP barrier were fabricated for comparison. The current-voltage characteristics show that the turn on voltage in the MQB barrier sample is higher than that in the bulk barrier sample. The experimentally measured effective barrier height of the MQB is about 1.8 times that of the bulk barrier, and this value is in quite good agreement with the value, 1.93, theoretically calculated by the transfer matrix method.",

author = "Shiao, {Hung Pin} and Wang, {Chi Yu} and Tu, {Yuan Kuang} and Wei Lin and Lee, {Ching Ting}",

year = "1995",

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T1 - InGaP GaAs multiquantum barrier structures prepared by low-pressure organometallic vapor phase epitaxy

AU - Shiao, Hung Pin

AU - Wang, Chi Yu

AU - Tu, Yuan Kuang

AU - Lin, Wei

AU - Lee, Ching Ting

PY - 1995/12

Y1 - 1995/12

N2 - An InGaP GaAs superlattice with multiquantum barrier (MQB) effect was demonstrated by low-pressure organometallic vapor phase epitaxial technique. Two types of n-i-n tunnel diodes with either InGaP GaAs MQB barrier or bulk InGaP barrier were fabricated for comparison. The current-voltage characteristics show that the turn on voltage in the MQB barrier sample is higher than that in the bulk barrier sample. The experimentally measured effective barrier height of the MQB is about 1.8 times that of the bulk barrier, and this value is in quite good agreement with the value, 1.93, theoretically calculated by the transfer matrix method.

AB - An InGaP GaAs superlattice with multiquantum barrier (MQB) effect was demonstrated by low-pressure organometallic vapor phase epitaxial technique. Two types of n-i-n tunnel diodes with either InGaP GaAs MQB barrier or bulk InGaP barrier were fabricated for comparison. The current-voltage characteristics show that the turn on voltage in the MQB barrier sample is higher than that in the bulk barrier sample. The experimentally measured effective barrier height of the MQB is about 1.8 times that of the bulk barrier, and this value is in quite good agreement with the value, 1.93, theoretically calculated by the transfer matrix method.

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JO - Solid State Electronics

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ER -

InGaP GaAs multiquantum barrier structures prepared by low-pressure organometallic vapor phase epitaxy

Abstract

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