InGaP GaAs multiquantum barrier structures prepared by low-pressure organometallic vapor phase epitaxy

Hung Pin Shiao, Chi Yu Wang, Yuan Kuang Tu, Wei Lin, Ching Ting Lee

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

An InGaP GaAs superlattice with multiquantum barrier (MQB) effect was demonstrated by low-pressure organometallic vapor phase epitaxial technique. Two types of n-i-n tunnel diodes with either InGaP GaAs MQB barrier or bulk InGaP barrier were fabricated for comparison. The current-voltage characteristics show that the turn on voltage in the MQB barrier sample is higher than that in the bulk barrier sample. The experimentally measured effective barrier height of the MQB is about 1.8 times that of the bulk barrier, and this value is in quite good agreement with the value, 1.93, theoretically calculated by the transfer matrix method.

Original languageEnglish
Pages (from-to)2001-2004
Number of pages4
JournalSolid State Electronics
Volume38
Issue number12
DOIs
Publication statusPublished - 1995 Dec

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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