InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric

Kuan Wei Lee, Po Wen Sze, Kai Lin Lee, Mau-phon Houng, Yeong-Her Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The In0.49Ga0.51P/In0.15Ga 0.85As/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) not only has the advantages of the MOS structure but also has the two-dimensional electron gas channel. The gate dielectric is obtained by the oxidization of the InGaP layer using liquid phase method. As compared to its counterpart PHEMTs, the proposed MOS-PHEMTs have larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages.

Original languageEnglish
Title of host publication2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Pages609-612
Number of pages4
DOIs
Publication statusPublished - 2006 Dec 1
Event2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong
Duration: 2005 Dec 192005 Dec 21

Publication series

Name2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
CountryHong Kong
CityHowloon
Period05-12-1905-12-21

Fingerprint

Two dimensional electron gas
Gate dielectrics
High electron mobility transistors
Electric breakdown
Leakage currents
Metals
Liquids
Electric potential
Oxide semiconductors
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Lee, K. W., Sze, P. W., Lee, K. L., Houng, M., & Wang, Y-H. (2006). InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC (pp. 609-612). [1635347] (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). https://doi.org/10.1109/EDSSC.2005.1635347
Lee, Kuan Wei ; Sze, Po Wen ; Lee, Kai Lin ; Houng, Mau-phon ; Wang, Yeong-Her. / InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric. 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. 2006. pp. 609-612 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).
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abstract = "The In0.49Ga0.51P/In0.15Ga 0.85As/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) not only has the advantages of the MOS structure but also has the two-dimensional electron gas channel. The gate dielectric is obtained by the oxidization of the InGaP layer using liquid phase method. As compared to its counterpart PHEMTs, the proposed MOS-PHEMTs have larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages.",
author = "Lee, {Kuan Wei} and Sze, {Po Wen} and Lee, {Kai Lin} and Mau-phon Houng and Yeong-Her Wang",
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Lee, KW, Sze, PW, Lee, KL, Houng, M & Wang, Y-H 2006, InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric. in 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC., 1635347, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, pp. 609-612, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Howloon, Hong Kong, 05-12-19. https://doi.org/10.1109/EDSSC.2005.1635347

InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric. / Lee, Kuan Wei; Sze, Po Wen; Lee, Kai Lin; Houng, Mau-phon; Wang, Yeong-Her.

2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. 2006. p. 609-612 1635347 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - The In0.49Ga0.51P/In0.15Ga 0.85As/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) not only has the advantages of the MOS structure but also has the two-dimensional electron gas channel. The gate dielectric is obtained by the oxidization of the InGaP layer using liquid phase method. As compared to its counterpart PHEMTs, the proposed MOS-PHEMTs have larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages.

AB - The In0.49Ga0.51P/In0.15Ga 0.85As/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) not only has the advantages of the MOS structure but also has the two-dimensional electron gas channel. The gate dielectric is obtained by the oxidization of the InGaP layer using liquid phase method. As compared to its counterpart PHEMTs, the proposed MOS-PHEMTs have larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages.

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Lee KW, Sze PW, Lee KL, Houng M, Wang Y-H. InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. 2006. p. 609-612. 1635347. (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). https://doi.org/10.1109/EDSSC.2005.1635347