InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric

Kuan Wei Lee; Po Wen Sze; Kai Lin Lee; Mau Phon Houng; Yeong Her Wang

doi:10.1109/EDSSC.2005.1635347

InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric

Kuan Wei Lee, Po Wen Sze, Kai Lin Lee, Mau Phon Houng, Yeong Her Wang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The In_0.49Ga_0.51P/In_0.15Ga _0.85As/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) not only has the advantages of the MOS structure but also has the two-dimensional electron gas channel. The gate dielectric is obtained by the oxidization of the InGaP layer using liquid phase method. As compared to its counterpart PHEMTs, the proposed MOS-PHEMTs have larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages.

Original language	English
Title of host publication	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	609-612
Number of pages	4
ISBN (Print)	0780393392, 9780780393394
DOIs	https://doi.org/10.1109/EDSSC.2005.1635347
Publication status	Published - 2005 Jan 1
Event	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong Duration: 2005 Dec 19 → 2005 Dec 21

Publication series

Name	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Country/Territory	Hong Kong
City	Howloon
Period	05-12-19 → 05-12-21

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDSSC.2005.1635347

Cite this

Lee, K. W., Sze, P. W., Lee, K. L., Houng, M. P., & Wang, Y. H. (2005). InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC (pp. 609-612). Article 1635347 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2005.1635347

@inproceedings{3974776490d14eaea83609710a5e0dac,

title = "InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric",

abstract = "The In0.49Ga0.51P/In0.15Ga 0.85As/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) not only has the advantages of the MOS structure but also has the two-dimensional electron gas channel. The gate dielectric is obtained by the oxidization of the InGaP layer using liquid phase method. As compared to its counterpart PHEMTs, the proposed MOS-PHEMTs have larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages.",

author = "Lee, {Kuan Wei} and Sze, {Po Wen} and Lee, {Kai Lin} and Houng, {Mau Phon} and Wang, {Yeong Her}",

year = "2005",

month = jan,

day = "1",

doi = "10.1109/EDSSC.2005.1635347",

language = "English",

isbn = "0780393392",

series = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "609--612",

booktitle = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC",

address = "United States",

note = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC ; Conference date: 19-12-2005 Through 21-12-2005",

}

Lee, KW, Sze, PW, Lee, KL, Houng, MP & Wang, YH 2005, InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric. in 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC., 1635347, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Institute of Electrical and Electronics Engineers Inc., pp. 609-612, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Howloon, Hong Kong, 05-12-19. https://doi.org/10.1109/EDSSC.2005.1635347

InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric. / Lee, Kuan Wei; Sze, Po Wen; Lee, Kai Lin et al.
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc., 2005. p. 609-612 1635347 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric

AU - Lee, Kuan Wei

AU - Sze, Po Wen

AU - Lee, Kai Lin

AU - Houng, Mau Phon

AU - Wang, Yeong Her

PY - 2005/1/1

Y1 - 2005/1/1

N2 - The In0.49Ga0.51P/In0.15Ga 0.85As/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) not only has the advantages of the MOS structure but also has the two-dimensional electron gas channel. The gate dielectric is obtained by the oxidization of the InGaP layer using liquid phase method. As compared to its counterpart PHEMTs, the proposed MOS-PHEMTs have larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages.

AB - The In0.49Ga0.51P/In0.15Ga 0.85As/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) not only has the advantages of the MOS structure but also has the two-dimensional electron gas channel. The gate dielectric is obtained by the oxidization of the InGaP layer using liquid phase method. As compared to its counterpart PHEMTs, the proposed MOS-PHEMTs have larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages.

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M3 - Conference contribution

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SN - 9780780393394

T3 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

SP - 609

EP - 612

BT - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Y2 - 19 December 2005 through 21 December 2005

ER -

Lee KW, Sze PW, Lee KL, Houng MP, Wang YH. InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc. 2005. p. 609-612. 1635347. (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). doi: 10.1109/EDSSC.2005.1635347

InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric

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