InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric

Kuan Wei Lee, Po Wen Sze, Kai Lin Lee, Mau Phon Houng, Yeong Her Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The In0.49Ga0.51P/In0.15Ga 0.85As/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) not only has the advantages of the MOS structure but also has the two-dimensional electron gas channel. The gate dielectric is obtained by the oxidization of the InGaP layer using liquid phase method. As compared to its counterpart PHEMTs, the proposed MOS-PHEMTs have larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages.

Original languageEnglish
Title of host publication2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages609-612
Number of pages4
ISBN (Print)0780393392, 9780780393394
DOIs
Publication statusPublished - 2005 Jan 1
Event2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong
Duration: 2005 Dec 192005 Dec 21

Publication series

Name2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
CountryHong Kong
CityHowloon
Period05-12-1905-12-21

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Lee, K. W., Sze, P. W., Lee, K. L., Houng, M. P., & Wang, Y. H. (2005). InGaP PHEMT with a liquid phase oxidized InGaP as gate dielectric. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC (pp. 609-612). [1635347] (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2005.1635347