InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature applications

Kuo Hui Yu; Kun Wei Lin; Chin Chuan Cheng; Kuan Po Lin; Chih Hung Yen; Cheng Zu Wu; Wen Chau Liu

doi:10.1049/el:20001232

InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature applications

Kuo Hui Yu, Kun Wei Lin, Chin Chuan Cheng, Kuan Po Lin, Chih Hung Yen, Cheng Zu Wu, Wen Chau Liu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A novel InGaP/GaAs camel-like field-effect transistor (HFET) has been fabricated successfully and demonstrated. Because of the use of an n⁺-GaAs/p⁺-InGaP/n-GaAs camel-like gate and GaAs/InGaAs double channel, the gate barrier height and carrier confinement are improved. Therefore, low-leakage and high-breakdown characteristics are obtained. Experimentally, this device provides high-breakdown characteristics and good device performances over a wider temperature operation range of 30-210 °C. Therefore, the studied InGaP/GaAs structure is suitable for high-power and high-temperature applications.

Original language	English
Pages (from-to)	1886-1888
Number of pages	3
Journal	Electronics Letters
Volume	36
Issue number	22
DOIs	https://doi.org/10.1049/el:20001232
Publication status	Published - 2000 Oct 26

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20001232

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@article{a18cf50d6e164ad6971123b3122ba25c,

title = "InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature applications",

abstract = "A novel InGaP/GaAs camel-like field-effect transistor (HFET) has been fabricated successfully and demonstrated. Because of the use of an n+-GaAs/p+-InGaP/n-GaAs camel-like gate and GaAs/InGaAs double channel, the gate barrier height and carrier confinement are improved. Therefore, low-leakage and high-breakdown characteristics are obtained. Experimentally, this device provides high-breakdown characteristics and good device performances over a wider temperature operation range of 30-210 °C. Therefore, the studied InGaP/GaAs structure is suitable for high-power and high-temperature applications.",

author = "Yu, {Kuo Hui} and Lin, {Kun Wei} and Cheng, {Chin Chuan} and Lin, {Kuan Po} and Yen, {Chih Hung} and Wu, {Cheng Zu} and Liu, {Wen Chau}",

year = "2000",

month = oct,

day = "26",

doi = "10.1049/el:20001232",

language = "English",

volume = "36",

pages = "1886--1888",

journal = "Electronics Letters",

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publisher = "Institution of Engineering and Technology",

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TY - JOUR

T1 - InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature applications

AU - Yu, Kuo Hui

AU - Lin, Kun Wei

AU - Cheng, Chin Chuan

AU - Lin, Kuan Po

AU - Yen, Chih Hung

AU - Wu, Cheng Zu

AU - Liu, Wen Chau

PY - 2000/10/26

Y1 - 2000/10/26

N2 - A novel InGaP/GaAs camel-like field-effect transistor (HFET) has been fabricated successfully and demonstrated. Because of the use of an n+-GaAs/p+-InGaP/n-GaAs camel-like gate and GaAs/InGaAs double channel, the gate barrier height and carrier confinement are improved. Therefore, low-leakage and high-breakdown characteristics are obtained. Experimentally, this device provides high-breakdown characteristics and good device performances over a wider temperature operation range of 30-210 °C. Therefore, the studied InGaP/GaAs structure is suitable for high-power and high-temperature applications.

AB - A novel InGaP/GaAs camel-like field-effect transistor (HFET) has been fabricated successfully and demonstrated. Because of the use of an n+-GaAs/p+-InGaP/n-GaAs camel-like gate and GaAs/InGaAs double channel, the gate barrier height and carrier confinement are improved. Therefore, low-leakage and high-breakdown characteristics are obtained. Experimentally, this device provides high-breakdown characteristics and good device performances over a wider temperature operation range of 30-210 °C. Therefore, the studied InGaP/GaAs structure is suitable for high-power and high-temperature applications.

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DO - 10.1049/el:20001232

M3 - Article

AN - SCOPUS:0034292754

SN - 0013-5194

VL - 36

SP - 1886

EP - 1888

JO - Electronics Letters

JF - Electronics Letters

IS - 22

ER -

InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature applications

Abstract

All Science Journal Classification (ASJC) codes

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