InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature applications

Kuo Hui Yu, Kun Wei Lin, Chin Chuan Cheng, Kuan Po Lin, Chih Hung Yen, Cheng Zu Wu, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

A novel InGaP/GaAs camel-like field-effect transistor (HFET) has been fabricated successfully and demonstrated. Because of the use of an n+-GaAs/p+-InGaP/n-GaAs camel-like gate and GaAs/InGaAs double channel, the gate barrier height and carrier confinement are improved. Therefore, low-leakage and high-breakdown characteristics are obtained. Experimentally, this device provides high-breakdown characteristics and good device performances over a wider temperature operation range of 30-210 °C. Therefore, the studied InGaP/GaAs structure is suitable for high-power and high-temperature applications.

Original languageEnglish
Pages (from-to)1886-1888
Number of pages3
JournalElectronics Letters
Volume36
Issue number22
DOIs
Publication statusPublished - 2000 Oct 26

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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