A novel InGaP/GaAs camel-like field-effect transistor (HFET) has been fabricated successfully and demonstrated. Because of the use of an n+-GaAs/p+-InGaP/n-GaAs camel-like gate and GaAs/InGaAs double channel, the gate barrier height and carrier confinement are improved. Therefore, low-leakage and high-breakdown characteristics are obtained. Experimentally, this device provides high-breakdown characteristics and good device performances over a wider temperature operation range of 30-210 °C. Therefore, the studied InGaP/GaAs structure is suitable for high-power and high-temperature applications.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering