InGaP/GaAs resonant-tunneling transistor (RTT)

Wen-Chau Liu, Y. S. Shie, W. L. Chang, S. C. Feng, K. H. Yu, J. H. Yan

Research output: Contribution to conferencePaperpeer-review

Abstract

In this letter, a new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) is fabricated and demonstrated. A 5-period InGaP/GaAs superlattice is used to serve the RT route and the confinement barrier for minority carriers. Due to the large valence band discontinuity (ΔEV) at the InGaP/GaAs heterointerface, a high current gain (βmax ≈220) is obtained. Furthermore, the interesting N-shaped negative-differential-resistance (NDR) phenomena resulting from RT effect are found both in the saturation and forward-active region of current-voltage characteristics at room temperature.

Original languageEnglish
Pages240-242
Number of pages3
Publication statusPublished - 1999 Jan 1
EventProceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust
Duration: 1998 Dec 141998 Dec 16

Other

OtherProceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices
CityPerth, WA, Aust
Period98-12-1498-12-16

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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