InGaP/GaAs resonant-tunneling transistor (RTT)

W. C. Liu; Y. S. Shie; W. L. Chang; S. C. Feng; K. H. Yu; J. H. Yan

InGaP/GaAs resonant-tunneling transistor (RTT)

W. C. Liu, Y. S. Shie, W. L. Chang, S. C. Feng, K. H. Yu, J. H. Yan

Research output: Contribution to conference › Paper › peer-review

Abstract

In this letter, a new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) is fabricated and demonstrated. A 5-period InGaP/GaAs superlattice is used to serve the RT route and the confinement barrier for minority carriers. Due to the large valence band discontinuity (ΔE_V) at the InGaP/GaAs heterointerface, a high current gain (β_max ≈220) is obtained. Furthermore, the interesting N-shaped negative-differential-resistance (NDR) phenomena resulting from RT effect are found both in the saturation and forward-active region of current-voltage characteristics at room temperature.

Original language	English
Pages	240-242
Number of pages	3
Publication status	Published - 1999
Event	Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust Duration: 1998 Dec 14 → 1998 Dec 16

Other

Other	Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices
City	Perth, WA, Aust
Period	98-12-14 → 98-12-16

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

Cite this

@conference{cb55515b064e4493ba517c7808208b07,

title = "InGaP/GaAs resonant-tunneling transistor (RTT)",

abstract = "In this letter, a new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) is fabricated and demonstrated. A 5-period InGaP/GaAs superlattice is used to serve the RT route and the confinement barrier for minority carriers. Due to the large valence band discontinuity (ΔEV) at the InGaP/GaAs heterointerface, a high current gain (βmax ≈220) is obtained. Furthermore, the interesting N-shaped negative-differential-resistance (NDR) phenomena resulting from RT effect are found both in the saturation and forward-active region of current-voltage characteristics at room temperature.",

author = "Liu, {W. C.} and Shie, {Y. S.} and Chang, {W. L.} and Feng, {S. C.} and Yu, {K. H.} and Yan, {J. H.}",

year = "1999",

language = "English",

pages = "240--242",

note = "Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 14-12-1998 Through 16-12-1998",

}

TY - CONF

T1 - InGaP/GaAs resonant-tunneling transistor (RTT)

AU - Liu, W. C.

AU - Shie, Y. S.

AU - Chang, W. L.

AU - Feng, S. C.

AU - Yu, K. H.

AU - Yan, J. H.

PY - 1999

Y1 - 1999

N2 - In this letter, a new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) is fabricated and demonstrated. A 5-period InGaP/GaAs superlattice is used to serve the RT route and the confinement barrier for minority carriers. Due to the large valence band discontinuity (ΔEV) at the InGaP/GaAs heterointerface, a high current gain (βmax ≈220) is obtained. Furthermore, the interesting N-shaped negative-differential-resistance (NDR) phenomena resulting from RT effect are found both in the saturation and forward-active region of current-voltage characteristics at room temperature.

AB - In this letter, a new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) is fabricated and demonstrated. A 5-period InGaP/GaAs superlattice is used to serve the RT route and the confinement barrier for minority carriers. Due to the large valence band discontinuity (ΔEV) at the InGaP/GaAs heterointerface, a high current gain (βmax ≈220) is obtained. Furthermore, the interesting N-shaped negative-differential-resistance (NDR) phenomena resulting from RT effect are found both in the saturation and forward-active region of current-voltage characteristics at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=0032646839&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032646839&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0032646839

SP - 240

EP - 242

T2 - Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices

Y2 - 14 December 1998 through 16 December 1998

ER -

InGaP/GaAs resonant-tunneling transistor (RTT)

Abstract

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All Science Journal Classification (ASJC) codes

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