InGaP/GaAs resonant-tunneling transistor (RTT)

Wen-Chau Liu, Y. S. Shie, W. L. Chang, S. C. Feng, K. H. Yu, J. H. Yan

Research output: Contribution to conferencePaper

Abstract

In this letter, a new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) is fabricated and demonstrated. A 5-period InGaP/GaAs superlattice is used to serve the RT route and the confinement barrier for minority carriers. Due to the large valence band discontinuity (ΔE V ) at the InGaP/GaAs heterointerface, a high current gain (β max ≈220) is obtained. Furthermore, the interesting N-shaped negative-differential-resistance (NDR) phenomena resulting from RT effect are found both in the saturation and forward-active region of current-voltage characteristics at room temperature.

Original languageEnglish
Pages240-242
Number of pages3
Publication statusPublished - 1999 Jan 1
EventProceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust
Duration: 1998 Dec 141998 Dec 16

Other

OtherProceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices
CityPerth, WA, Aust
Period98-12-1498-12-16

Fingerprint

Resonant tunneling
Bipolar transistors
Current voltage characteristics
Valence bands
Transistors
Temperature
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Liu, W-C., Shie, Y. S., Chang, W. L., Feng, S. C., Yu, K. H., & Yan, J. H. (1999). InGaP/GaAs resonant-tunneling transistor (RTT). 240-242. Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .
Liu, Wen-Chau ; Shie, Y. S. ; Chang, W. L. ; Feng, S. C. ; Yu, K. H. ; Yan, J. H. / InGaP/GaAs resonant-tunneling transistor (RTT). Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .3 p.
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title = "InGaP/GaAs resonant-tunneling transistor (RTT)",
abstract = "In this letter, a new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) is fabricated and demonstrated. A 5-period InGaP/GaAs superlattice is used to serve the RT route and the confinement barrier for minority carriers. Due to the large valence band discontinuity (ΔE V ) at the InGaP/GaAs heterointerface, a high current gain (β max ≈220) is obtained. Furthermore, the interesting N-shaped negative-differential-resistance (NDR) phenomena resulting from RT effect are found both in the saturation and forward-active region of current-voltage characteristics at room temperature.",
author = "Wen-Chau Liu and Shie, {Y. S.} and Chang, {W. L.} and Feng, {S. C.} and Yu, {K. H.} and Yan, {J. H.}",
year = "1999",
month = "1",
day = "1",
language = "English",
pages = "240--242",
note = "Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 14-12-1998 Through 16-12-1998",

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Liu, W-C, Shie, YS, Chang, WL, Feng, SC, Yu, KH & Yan, JH 1999, 'InGaP/GaAs resonant-tunneling transistor (RTT)' Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, 98-12-14 - 98-12-16, pp. 240-242.

InGaP/GaAs resonant-tunneling transistor (RTT). / Liu, Wen-Chau; Shie, Y. S.; Chang, W. L.; Feng, S. C.; Yu, K. H.; Yan, J. H.

1999. 240-242 Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - InGaP/GaAs resonant-tunneling transistor (RTT)

AU - Liu, Wen-Chau

AU - Shie, Y. S.

AU - Chang, W. L.

AU - Feng, S. C.

AU - Yu, K. H.

AU - Yan, J. H.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - In this letter, a new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) is fabricated and demonstrated. A 5-period InGaP/GaAs superlattice is used to serve the RT route and the confinement barrier for minority carriers. Due to the large valence band discontinuity (ΔE V ) at the InGaP/GaAs heterointerface, a high current gain (β max ≈220) is obtained. Furthermore, the interesting N-shaped negative-differential-resistance (NDR) phenomena resulting from RT effect are found both in the saturation and forward-active region of current-voltage characteristics at room temperature.

AB - In this letter, a new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) is fabricated and demonstrated. A 5-period InGaP/GaAs superlattice is used to serve the RT route and the confinement barrier for minority carriers. Due to the large valence band discontinuity (ΔE V ) at the InGaP/GaAs heterointerface, a high current gain (β max ≈220) is obtained. Furthermore, the interesting N-shaped negative-differential-resistance (NDR) phenomena resulting from RT effect are found both in the saturation and forward-active region of current-voltage characteristics at room temperature.

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M3 - Paper

SP - 240

EP - 242

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Liu W-C, Shie YS, Chang WL, Feng SC, Yu KH, Yan JH. InGaP/GaAs resonant-tunneling transistor (RTT). 1999. Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .