InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)

Wen Chau Liu, Shiou Ying Cheng, Jung Hui Tsai, Po Hung Lin, Jing Yuh Chen, Wei Chou Wang

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In this letter, a new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) is fabricated and demonstrated. A 5-period InGaP/GaAs superlattice is used to serve the RT route and the confinement barrier for minority carriers. Due to the large valence band discontinuity (ΔE v) at the InGaP/GaAs heterointerface, a high current gain (β max ≃ 220) is obtained. Furthermore, the interesting N-shaped negative-differential-resistance (NDR) phenomena resulting from RT effect are found both in the saturation and forward-active region of current-voltage (I-V) characteristics at room temperature.

Original languageEnglish
Pages (from-to)515-517
Number of pages3
JournalIEEE Electron Device Letters
Volume18
Issue number11
DOIs
Publication statusPublished - 1997 Nov 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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