InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)

Wen-Chau Liu, Shiou Ying Cheng, Jung Hui Tsai, Po Hung Lin, Jing Yuh Chen, Wei Chou Wang

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In this letter, a new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) is fabricated and demonstrated. A 5-period InGaP/GaAs superlattice is used to serve the RT route and the confinement barrier for minority carriers. Due to the large valence band discontinuity (ΔE v) at the InGaP/GaAs heterointerface, a high current gain (β max ≃ 220) is obtained. Furthermore, the interesting N-shaped negative-differential-resistance (NDR) phenomena resulting from RT effect are found both in the saturation and forward-active region of current-voltage (I-V) characteristics at room temperature.

Original languageEnglish
Pages (from-to)515-517
Number of pages3
JournalIEEE Electron Device Letters
Volume18
Issue number11
DOIs
Publication statusPublished - 1997 Nov 1

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Resonant tunneling
Bipolar transistors
Valence bands
Electric potential
Temperature
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Liu, Wen-Chau ; Cheng, Shiou Ying ; Tsai, Jung Hui ; Lin, Po Hung ; Chen, Jing Yuh ; Wang, Wei Chou. / InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT). In: IEEE Electron Device Letters. 1997 ; Vol. 18, No. 11. pp. 515-517.
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InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT). / Liu, Wen-Chau; Cheng, Shiou Ying; Tsai, Jung Hui; Lin, Po Hung; Chen, Jing Yuh; Wang, Wei Chou.

In: IEEE Electron Device Letters, Vol. 18, No. 11, 01.11.1997, p. 515-517.

Research output: Contribution to journalArticle

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AU - Wang, Wei Chou

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