Abstract
In this letter, a new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) is fabricated and demonstrated. A 5-period InGaP/GaAs superlattice is used to serve the RT route and the confinement barrier for minority carriers. Due to the large valence band discontinuity (ΔE v) at the InGaP/GaAs heterointerface, a high current gain (β max ≃ 220) is obtained. Furthermore, the interesting N-shaped negative-differential-resistance (NDR) phenomena resulting from RT effect are found both in the saturation and forward-active region of current-voltage (I-V) characteristics at room temperature.
Original language | English |
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Pages (from-to) | 515-517 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 18 |
Issue number | 11 |
DOIs | |
Publication status | Published - 1997 Nov |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering