InGaP/GaAs superlatticed resonant-tunneling transistor (SRTT)

W. C. Liu, S. Y. Cheng, H. J. Pan, J. Y. Chen, W. C. Wang, K. B. Thei, S. C. Feng, K. H. Yu

Research output: Contribution to journalConference articlepeer-review

Abstract

In this presentation, we have fabricated and demonstrated a new InGaP/GaAs RTT device. The good transistor performances and an interesting three-terminal controlled multiple N-shaped NDR phenomena are observed at room temperature. In our proposed structure, a 5-period InGaP/GaAs superlattice is employed to serve the RT route and the confinement barrier for holes. Thus a high emitter injection efficiency and high current gain performance can be obtained.

Original languageEnglish
Pages (from-to)475-478
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 1999
EventProceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM) - Davos, Switz
Duration: 1999 May 161999 May 20

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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