InGaP/GaAs superlatticed resonant-tunneling transistor (SRTT)

W. C. Liu; S. Y. Cheng; H. J. Pan; J. Y. Chen; W. C. Wang; K. B. Thei; S. C. Feng; K. H. Yu

InGaP/GaAs superlatticed resonant-tunneling transistor (SRTT)

W. C. Liu, S. Y. Cheng, H. J. Pan, J. Y. Chen, W. C. Wang, K. B. Thei, S. C. Feng, K. H. Yu

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this presentation, we have fabricated and demonstrated a new InGaP/GaAs RTT device. The good transistor performances and an interesting three-terminal controlled multiple N-shaped NDR phenomena are observed at room temperature. In our proposed structure, a 5-period InGaP/GaAs superlattice is employed to serve the RT route and the confinement barrier for holes. Thus a high emitter injection efficiency and high current gain performance can be obtained.

Original language	English
Pages (from-to)	475-478
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication status	Published - 1999
Event	Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM) - Davos, Switz Duration: 1999 May 16 → 1999 May 20

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'InGaP/GaAs superlatticed resonant-tunneling transistor (SRTT)'. Together they form a unique fingerprint.

Cite this

@article{945427940a22475cb686c27a7e70d2ba,

title = "InGaP/GaAs superlatticed resonant-tunneling transistor (SRTT)",

abstract = "In this presentation, we have fabricated and demonstrated a new InGaP/GaAs RTT device. The good transistor performances and an interesting three-terminal controlled multiple N-shaped NDR phenomena are observed at room temperature. In our proposed structure, a 5-period InGaP/GaAs superlattice is employed to serve the RT route and the confinement barrier for holes. Thus a high emitter injection efficiency and high current gain performance can be obtained.",

author = "Liu, {W. C.} and Cheng, {S. Y.} and Pan, {H. J.} and Chen, {J. Y.} and Wang, {W. C.} and Thei, {K. B.} and Feng, {S. C.} and Yu, {K. H.}",

note = "Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM) ; Conference date: 16-05-1999 Through 20-05-1999",

year = "1999",

language = "English",

pages = "475--478",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - InGaP/GaAs superlatticed resonant-tunneling transistor (SRTT)

AU - Liu, W. C.

AU - Cheng, S. Y.

AU - Pan, H. J.

AU - Chen, J. Y.

AU - Wang, W. C.

AU - Thei, K. B.

AU - Feng, S. C.

AU - Yu, K. H.

PY - 1999

Y1 - 1999

N2 - In this presentation, we have fabricated and demonstrated a new InGaP/GaAs RTT device. The good transistor performances and an interesting three-terminal controlled multiple N-shaped NDR phenomena are observed at room temperature. In our proposed structure, a 5-period InGaP/GaAs superlattice is employed to serve the RT route and the confinement barrier for holes. Thus a high emitter injection efficiency and high current gain performance can be obtained.

AB - In this presentation, we have fabricated and demonstrated a new InGaP/GaAs RTT device. The good transistor performances and an interesting three-terminal controlled multiple N-shaped NDR phenomena are observed at room temperature. In our proposed structure, a 5-period InGaP/GaAs superlattice is employed to serve the RT route and the confinement barrier for holes. Thus a high emitter injection efficiency and high current gain performance can be obtained.

UR - http://www.scopus.com/inward/record.url?scp=0032681465&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032681465&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032681465

SP - 475

EP - 478

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SN - 1092-8669

T2 - Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM)

Y2 - 16 May 1999 through 20 May 1999

ER -