A new InGaP/GaAs/InGaAs camel-like gate field-effect transistor with a δ-doped p-channel is investigated. Owing to the p-n depletion of the camel-like gate structure, the considerable conduction band discontinuity at the p-GaAs/i-InGaAs heterojunction, and the confinement effect for holes in the InGaAs quantum well, simultaneously, a large gate turn-on voltage up to 2.3V is obtained. Experimental results exhibit a maximum extrinsic transconductance of 34 mS/mm and a saturation current density of 233mA/mm. An extremely broad gate voltage swing greater than 6V with above 80 maximum transconductance is achieved. The ft and fmax are of 3.2 and 6.7GHz, respectively.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering