InGaP/GaAs/InGaAs δ-doped p-channel field-effect transistor with p+/n+/p camel-like gate structure

J. H. Tsai, W. S. Lour, Wen-Chau Liu

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

A new InGaP/GaAs/InGaAs camel-like gate field-effect transistor with a δ-doped p-channel is investigated. Owing to the p-n depletion of the camel-like gate structure, the considerable conduction band discontinuity at the p-GaAs/i-InGaAs heterojunction, and the confinement effect for holes in the InGaAs quantum well, simultaneously, a large gate turn-on voltage up to 2.3V is obtained. Experimental results exhibit a maximum extrinsic transconductance of 34 mS/mm and a saturation current density of 233mA/mm. An extremely broad gate voltage swing greater than 6V with above 80 maximum transconductance is achieved. The ft and fmax are of 3.2 and 6.7GHz, respectively.

Original languageEnglish
Pages (from-to)572-573
Number of pages2
JournalElectronics Letters
Volume45
Issue number11
DOIs
Publication statusPublished - 2009 Jun 8

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'InGaP/GaAs/InGaAs δ-doped p-channel field-effect transistor with p<sup>+</sup>/n<sup>+</sup>/p camel-like gate structure'. Together they form a unique fingerprint.

Cite this