InGaP/InGaAs dual-channel transistor

Hung Ming Chuang; Chii Maw Uang; Shiou Ying Cheng; Chun Yuan Chen; Po Hsien Lai; Chung I. Kao; Yan Ying Tsai; Wei Hsi Hsu; Wen Chau Liu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An interesting InGaP/InGaAs heterostructure field-effect transistor utilizing dual δ-doped quantum wells as double channels is studied and demonstrated. The employed dual δ-doped quantum wells and InGaP layer provide good carrier confinement and Schottky behavior, respectively. Good device performances including higher turn-on and breakdown voltages, high and linear transconductance and RF properties are obtained. For a 1×100μm device, turn-on voltage of 1.74 V, maximum output current of 499 mA/mm, and maximum transconductance of 162 mS/mm with 303 mA/mm broad operation regime are obtained. The microwave properties of f_x and f_max are 16 and 32.3 GHz, respectively. Furthermore, even the device is operated at higher temperature regime (>400K), insignificant degradations of DC and RF performances are observed.

Original language	English
Title of host publication	Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
Editors	X.P. Qu, G.P. Ru, B.Z. Li, B. Mizuno, H. Iwai
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	186-189
Number of pages	4
Volume	4
ISBN (Print)	7309039157
Publication status	Published - 2004
Event	Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 - Shanghai, China Duration: 2004 Mar 15 → 2004 Mar 16

Other

Other	Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
Country/Territory	China
City	Shanghai
Period	04-03-15 → 04-03-16

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

Chuang, H. M., Uang, C. M., Cheng, S. Y., Chen, C. Y., Lai, P. H., Kao, C. I., Tsai, Y. Y., Hsu, W. H., & Liu, W. C. (2004). InGaP/InGaAs dual-channel transistor. In X. P. Qu, G. P. Ru, B. Z. Li, B. Mizuno, & H. Iwai (Eds.), Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 (Vol. 4, pp. 186-189). Institute of Electrical and Electronics Engineers Inc..

@inproceedings{5e0358dfa87943dc9fcb6db9f68a4e24,

title = "InGaP/InGaAs dual-channel transistor",

abstract = "An interesting InGaP/InGaAs heterostructure field-effect transistor utilizing dual δ-doped quantum wells as double channels is studied and demonstrated. The employed dual δ-doped quantum wells and InGaP layer provide good carrier confinement and Schottky behavior, respectively. Good device performances including higher turn-on and breakdown voltages, high and linear transconductance and RF properties are obtained. For a 1×100μm device, turn-on voltage of 1.74 V, maximum output current of 499 mA/mm, and maximum transconductance of 162 mS/mm with 303 mA/mm broad operation regime are obtained. The microwave properties of fx and fmax are 16 and 32.3 GHz, respectively. Furthermore, even the device is operated at higher temperature regime (>400K), insignificant degradations of DC and RF performances are observed.",

author = "Chuang, \{Hung Ming\} and Uang, \{Chii Maw\} and Cheng, \{Shiou Ying\} and Chen, \{Chun Yuan\} and Lai, \{Po Hsien\} and Kao, \{Chung I.\} and Tsai, \{Yan Ying\} and Hsu, \{Wei Hsi\} and Liu, \{Wen Chau\}",

year = "2004",

language = "English",

isbn = "7309039157",

volume = "4",

pages = "186--189",

editor = "X.P. Qu and G.P. Ru and B.Z. Li and B. Mizuno and H. Iwai",

booktitle = "Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 ; Conference date: 15-03-2004 Through 16-03-2004",

}

Chuang, HM, Uang, CM, Cheng, SY, Chen, CY, Lai, PH, Kao, CI, Tsai, YY, Hsu, WH & Liu, WC 2004, InGaP/InGaAs dual-channel transistor. in XP Qu, GP Ru, BZ Li, B Mizuno & H Iwai (eds), Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. vol. 4, Institute of Electrical and Electronics Engineers Inc., pp. 186-189, Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004, Shanghai, China, 04-03-15.

InGaP/InGaAs dual-channel transistor. / Chuang, Hung Ming; Uang, Chii Maw; Cheng, Shiou Ying et al.
Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. ed. / X.P. Qu; G.P. Ru; B.Z. Li; B. Mizuno; H. Iwai. Vol. 4 Institute of Electrical and Electronics Engineers Inc., 2004. p. 186-189.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - InGaP/InGaAs dual-channel transistor

AU - Chuang, Hung Ming

AU - Uang, Chii Maw

AU - Cheng, Shiou Ying

AU - Chen, Chun Yuan

AU - Lai, Po Hsien

AU - Kao, Chung I.

AU - Tsai, Yan Ying

AU - Hsu, Wei Hsi

AU - Liu, Wen Chau

PY - 2004

Y1 - 2004

N2 - An interesting InGaP/InGaAs heterostructure field-effect transistor utilizing dual δ-doped quantum wells as double channels is studied and demonstrated. The employed dual δ-doped quantum wells and InGaP layer provide good carrier confinement and Schottky behavior, respectively. Good device performances including higher turn-on and breakdown voltages, high and linear transconductance and RF properties are obtained. For a 1×100μm device, turn-on voltage of 1.74 V, maximum output current of 499 mA/mm, and maximum transconductance of 162 mS/mm with 303 mA/mm broad operation regime are obtained. The microwave properties of fx and fmax are 16 and 32.3 GHz, respectively. Furthermore, even the device is operated at higher temperature regime (>400K), insignificant degradations of DC and RF performances are observed.

AB - An interesting InGaP/InGaAs heterostructure field-effect transistor utilizing dual δ-doped quantum wells as double channels is studied and demonstrated. The employed dual δ-doped quantum wells and InGaP layer provide good carrier confinement and Schottky behavior, respectively. Good device performances including higher turn-on and breakdown voltages, high and linear transconductance and RF properties are obtained. For a 1×100μm device, turn-on voltage of 1.74 V, maximum output current of 499 mA/mm, and maximum transconductance of 162 mS/mm with 303 mA/mm broad operation regime are obtained. The microwave properties of fx and fmax are 16 and 32.3 GHz, respectively. Furthermore, even the device is operated at higher temperature regime (>400K), insignificant degradations of DC and RF performances are observed.

UR - https://www.scopus.com/pages/publications/3543071799

UR - https://www.scopus.com/pages/publications/3543071799#tab=citedBy

M3 - Conference contribution

AN - SCOPUS:3543071799

SN - 7309039157

VL - 4

SP - 186

EP - 189

BT - Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

A2 - Qu, X.P.

A2 - Ru, G.P.

A2 - Li, B.Z.

A2 - Mizuno, B.

A2 - Iwai, H.

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

Y2 - 15 March 2004 through 16 March 2004

ER -

InGaP/InGaAs dual-channel transistor

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