InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid-phase-oxidized InGaP as gate dielectric

Kuan Wei Lee, Po Wen Sze, Yu Ju Lin, Nan Ying Yang, Mau-phon Houng, Yeong-Her Wang

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

An InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with a thin InGaP oxide layer as the gate dielectric is demonstrated. The MOS-PHEMT not only has the advantages of the MOS structure but also has the high-density, high-mobility 2DEG channel. The MOS-PHEMTs have larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages than their counterpart PHEMTs have. Thus, the proposed MOS-PHEMT may be promising in power device applications.

Original languageEnglish
Pages (from-to)864-866
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number12
DOIs
Publication statusPublished - 2005 Dec 1

Fingerprint

Gate dielectrics
High electron mobility transistors
Metals
Liquids
Two dimensional electron gas
Electric breakdown
Leakage currents
Oxides
Electric potential
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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title = "InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid-phase-oxidized InGaP as gate dielectric",
abstract = "An InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with a thin InGaP oxide layer as the gate dielectric is demonstrated. The MOS-PHEMT not only has the advantages of the MOS structure but also has the high-density, high-mobility 2DEG channel. The MOS-PHEMTs have larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages than their counterpart PHEMTs have. Thus, the proposed MOS-PHEMT may be promising in power device applications.",
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InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid-phase-oxidized InGaP as gate dielectric. / Lee, Kuan Wei; Sze, Po Wen; Lin, Yu Ju; Yang, Nan Ying; Houng, Mau-phon; Wang, Yeong-Her.

In: IEEE Electron Device Letters, Vol. 26, No. 12, 01.12.2005, p. 864-866.

Research output: Contribution to journalArticle

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AU - Yang, Nan Ying

AU - Houng, Mau-phon

AU - Wang, Yeong-Her

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AB - An InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with a thin InGaP oxide layer as the gate dielectric is demonstrated. The MOS-PHEMT not only has the advantages of the MOS structure but also has the high-density, high-mobility 2DEG channel. The MOS-PHEMTs have larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages than their counterpart PHEMTs have. Thus, the proposed MOS-PHEMT may be promising in power device applications.

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