An InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with a thin InGaP oxide layer as the gate dielectric is demonstrated. The MOS-PHEMT not only has the advantages of the MOS structure but also has the high-density, high-mobility 2DEG channel. The MOS-PHEMTs have larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages than their counterpart PHEMTs have. Thus, the proposed MOS-PHEMT may be promising in power device applications.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering