InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid-phase-oxidized InGaP as gate dielectric

Kuan Wei Lee, Po Wen Sze, Yu Ju Lin, Nan Ying Yang, Mau-phon Houng, Yeong-Her Wang

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

An InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with a thin InGaP oxide layer as the gate dielectric is demonstrated. The MOS-PHEMT not only has the advantages of the MOS structure but also has the high-density, high-mobility 2DEG channel. The MOS-PHEMTs have larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages than their counterpart PHEMTs have. Thus, the proposed MOS-PHEMT may be promising in power device applications.

Original languageEnglish
Pages (from-to)864-866
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number12
DOIs
Publication statusPublished - 2005 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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