InGaP/InGaAs MOS-PHEMT with a liquid phase oxidized InGaP gate insulator

Hsien Chang Lin, Kuan Wei Lee, Chao Hsien Tu, Po Wen Sze, Yeong Her Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with a thin InGaP native oxide layer as the gate insulator has been demonstrated. The MOS-PHEMTs exhibit higher maximum drain current density, larger gate-swing voltage, larger gate-to-drain breakdown voltage, and better noise performance in comparison with the conventional PHEMTs. This proves that the proposed MOS-PHEMT is promising for device applications.

Original languageEnglish
Title of host publicationIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages181-184
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
EventIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
Duration: 2007 Dec 202007 Dec 22

Publication series

NameIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

OtherIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
CountryTaiwan
CityTainan
Period07-12-2007-12-22

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Lin, H. C., Lee, K. W., Tu, C. H., Sze, P. W., & Wang, Y. H. (2007). InGaP/InGaAs MOS-PHEMT with a liquid phase oxidized InGaP gate insulator. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 181-184). [4450092] (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450092