InGaP/InGaAs MOS-PHEMT with a nanoscale liquid phase-oxidized InGaP dielectric

Hsien Cheng Lin, Fang Ming Lee, Yu Chun Cheng, Kuan Wei Lee, Feri Adriyanto, Yeong Her Wang

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


InGaP/InGaAs metal-oxide-semiconductor (MOS) pseudomorphic high-electron-mobility transistor (PHEMT) with a nanoscale liquid phase-oxidized InGaP as the gate dielectric is demonstrated. Not only does the MOS-PHEMT have the advantages of the MOS structure, but it also has high-carrier density and a high-mobility 2DEG channel. Using selective oxidation of InGaP by liquid phase oxidation, the MOS-PHEMT can be fabricated without additional recess processes. The MOS-PHEMT exhibits larger transconductance, lower gate leakage current, higher breakdown voltage, higher cut-off frequency, lower minimum noise figure, and higher power-added efficiency than does its counterpart (reference PHEMT). The interface roughness effect on the DC and RF performance of devices is also discussed.

Original languageEnglish
Pages (from-to)27-31
Number of pages5
JournalSolid-State Electronics
Publication statusPublished - 2012 Feb

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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