TY - JOUR
T1 - InGaP/InGaAs MOS-PHEMT with a nanoscale liquid phase-oxidized InGaP dielectric
AU - Lin, Hsien Cheng
AU - Lee, Fang Ming
AU - Cheng, Yu Chun
AU - Lee, Kuan Wei
AU - Adriyanto, Feri
AU - Wang, Yeong Her
N1 - Funding Information:
This work was supported in part by the National Science Council of Taiwan under contracts 100CC02 and NSC95-2221-E-006-428-MY3.
PY - 2012/2
Y1 - 2012/2
N2 - InGaP/InGaAs metal-oxide-semiconductor (MOS) pseudomorphic high-electron-mobility transistor (PHEMT) with a nanoscale liquid phase-oxidized InGaP as the gate dielectric is demonstrated. Not only does the MOS-PHEMT have the advantages of the MOS structure, but it also has high-carrier density and a high-mobility 2DEG channel. Using selective oxidation of InGaP by liquid phase oxidation, the MOS-PHEMT can be fabricated without additional recess processes. The MOS-PHEMT exhibits larger transconductance, lower gate leakage current, higher breakdown voltage, higher cut-off frequency, lower minimum noise figure, and higher power-added efficiency than does its counterpart (reference PHEMT). The interface roughness effect on the DC and RF performance of devices is also discussed.
AB - InGaP/InGaAs metal-oxide-semiconductor (MOS) pseudomorphic high-electron-mobility transistor (PHEMT) with a nanoscale liquid phase-oxidized InGaP as the gate dielectric is demonstrated. Not only does the MOS-PHEMT have the advantages of the MOS structure, but it also has high-carrier density and a high-mobility 2DEG channel. Using selective oxidation of InGaP by liquid phase oxidation, the MOS-PHEMT can be fabricated without additional recess processes. The MOS-PHEMT exhibits larger transconductance, lower gate leakage current, higher breakdown voltage, higher cut-off frequency, lower minimum noise figure, and higher power-added efficiency than does its counterpart (reference PHEMT). The interface roughness effect on the DC and RF performance of devices is also discussed.
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U2 - 10.1016/j.sse.2011.09.011
DO - 10.1016/j.sse.2011.09.011
M3 - Article
AN - SCOPUS:84655176585
SN - 0038-1101
VL - 68
SP - 27
EP - 31
JO - Solid-State Electronics
JF - Solid-State Electronics
ER -