InGaP/InGaAs MOS-PHEMT with a nanoscale liquid phase-oxidized InGaP dielectric

Engineering & Materials Science

• Oxide semiconductors 100%
• High electron mobility transistors 97%
• Liquids 56%
• Metals 54%
• Oxidation 29%
• Two dimensional electron gas 29%
• Gate dielectrics 23%
• Carrier concentration 23%
• Transconductance 20%
• Cutoff frequency 19%
• Noise figure 19%
• Electric breakdown 19%
• Leakage currents 18%
• Surface roughness 13%

Physics & Astronomy

• high electron mobility transistors 87%
• metal oxide semiconductors 86%
• liquid phases 71%
• oxidation 24%
• recesses 22%
• power efficiency 19%
• transconductance 18%
• electrical faults 16%
• high current 15%
• high voltages 14%
• cut-off 14%
• leakage 13%
• roughness 13%
• direct current 13%
• low frequencies 11%
• performance 7%

Chemical Compounds

• Dielectric Material 74%
• Interface Roughness 73%
• Transconductance 64%
• Breakdown Voltage 63%
• Leakage Current 55%
• Liquid 45%
• Oxidation Reaction 18%