Abstract
An interesting InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor is fabricated and demonstrated. Due to the employed InGaAs dual quantum-well delta-doped-channel structure and Schottky behaviors of InGaP "insulator", good DC properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over wide operating temperature region (300<T<450K). Therefore, the studied device provides the promise for high-temperature and high-performance microwave electronic applications.
Original language | English |
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Pages (from-to) | 407-415 |
Number of pages | 9 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 5274 |
DOIs | |
Publication status | Published - 2004 |
Event | Microelectronics: Design, Technology and Packaging - Perth, WA, Australia Duration: 2003 Dec 10 → 2003 Dec 12 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering