InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor

Chin Chuan Cheng; Shiou Ying Cheng; Hung Ming Chuang; Chun Yuan Chen; Po Hsien Lai; Chung I. Kao; Ching Wen Hong; Chun Wei Chen; Wen-Chau Liu

doi:10.1117/12.522021

InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor

Chin Chuan Cheng, Shiou Ying Cheng, Hung Ming Chuang, Chun Yuan Chen, Po Hsien Lai, Chung I. Kao, Ching Wen Hong, Chun Wei Chen, Wen-Chau Liu

Research output: Contribution to journal › Conference article › peer-review

Abstract

An interesting InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor is fabricated and demonstrated. Due to the employed InGaAs dual quantum-well delta-doped-channel structure and Schottky behaviors of InGaP "insulator", good DC properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over wide operating temperature region (300<T<450K). Therefore, the studied device provides the promise for high-temperature and high-performance microwave electronic applications.

Original language	English
Pages (from-to)	407-415
Number of pages	9
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5274
DOIs	https://doi.org/10.1117/12.522021
Publication status	Published - 2004 Jun 1
Event	Microelectronics: Design, Technology and Packaging - Perth, WA, Australia Duration: 2003 Dec 10 → 2003 Dec 12

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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@article{906ce81c6f3a4784b0a8caef3836912f,

title = "InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor",

abstract = "An interesting InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor is fabricated and demonstrated. Due to the employed InGaAs dual quantum-well delta-doped-channel structure and Schottky behaviors of InGaP {"}insulator{"}, good DC properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over wide operating temperature region (300<T<450K). Therefore, the studied device provides the promise for high-temperature and high-performance microwave electronic applications.",

author = "Cheng, {Chin Chuan} and Cheng, {Shiou Ying} and Chuang, {Hung Ming} and Chen, {Chun Yuan} and Lai, {Po Hsien} and Kao, {Chung I.} and Hong, {Ching Wen} and Chen, {Chun Wei} and Wen-Chau Liu",

year = "2004",

month = jun,

day = "1",

doi = "10.1117/12.522021",

language = "English",

volume = "5274",

pages = "407--415",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Microelectronics: Design, Technology and Packaging ; Conference date: 10-12-2003 Through 12-12-2003",

}

InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor. / Cheng, Chin Chuan; Cheng, Shiou Ying; Chuang, Hung Ming; Chen, Chun Yuan; Lai, Po Hsien; Kao, Chung I.; Hong, Ching Wen; Chen, Chun Wei; Liu, Wen-Chau.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5274, 01.06.2004, p. 407-415.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor

AU - Cheng, Chin Chuan

AU - Cheng, Shiou Ying

AU - Chuang, Hung Ming

AU - Chen, Chun Yuan

AU - Lai, Po Hsien

AU - Kao, Chung I.

AU - Hong, Ching Wen

AU - Chen, Chun Wei

AU - Liu, Wen-Chau

PY - 2004/6/1

Y1 - 2004/6/1

N2 - An interesting InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor is fabricated and demonstrated. Due to the employed InGaAs dual quantum-well delta-doped-channel structure and Schottky behaviors of InGaP "insulator", good DC properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over wide operating temperature region (300<T<450K). Therefore, the studied device provides the promise for high-temperature and high-performance microwave electronic applications.

AB - An interesting InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor is fabricated and demonstrated. Due to the employed InGaAs dual quantum-well delta-doped-channel structure and Schottky behaviors of InGaP "insulator", good DC properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over wide operating temperature region (300<T<450K). Therefore, the studied device provides the promise for high-temperature and high-performance microwave electronic applications.

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DO - 10.1117/12.522021

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SP - 407

EP - 415

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

T2 - Microelectronics: Design, Technology and Packaging

Y2 - 10 December 2003 through 12 December 2003

ER -