InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor

Chin Chuan Cheng, Shiou Ying Cheng, Hung Ming Chuang, Chun Yuan Chen, Po Hsien Lai, Chung I. Kao, Ching Wen Hong, Chun Wei Chen, Wen-Chau Liu

Research output: Contribution to journalConference articlepeer-review

Abstract

An interesting InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor is fabricated and demonstrated. Due to the employed InGaAs dual quantum-well delta-doped-channel structure and Schottky behaviors of InGaP "insulator", good DC properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over wide operating temperature region (300<T<450K). Therefore, the studied device provides the promise for high-temperature and high-performance microwave electronic applications.

Original languageEnglish
Pages (from-to)407-415
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5274
DOIs
Publication statusPublished - 2004 Jun 1
EventMicroelectronics: Design, Technology and Packaging - Perth, WA, Australia
Duration: 2003 Dec 102003 Dec 12

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor'. Together they form a unique fingerprint.

Cite this