InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor

Chin Chuan Cheng; Shiou Ying Cheng; Hung Ming Chuang; Chun Yuan Chen; Po Hsien Lai; Chung I. Kao; Ching Wen Hong; Chun Wei Chen; Wen Chau Liu

doi:10.1117/12.522021

InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor

Chin Chuan Cheng, Shiou Ying Cheng, Hung Ming Chuang, Chun Yuan Chen, Po Hsien Lai, Chung I. Kao, Ching Wen Hong, Chun Wei Chen, Wen Chau Liu

Research output: Contribution to journal › Conference article › peer-review

Abstract

An interesting InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor is fabricated and demonstrated. Due to the employed InGaAs dual quantum-well delta-doped-channel structure and Schottky behaviors of InGaP "insulator", good DC properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over wide operating temperature region (300<T<450K). Therefore, the studied device provides the promise for high-temperature and high-performance microwave electronic applications.

Original language	English
Pages (from-to)	407-415
Number of pages	9
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5274
DOIs	https://doi.org/10.1117/12.522021
Publication status	Published - 2004
Event	Microelectronics: Design, Technology and Packaging - Perth, WA, Australia Duration: 2003 Dec 10 → 2003 Dec 12

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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@article{906ce81c6f3a4784b0a8caef3836912f,

title = "InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor",

abstract = "An interesting InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor is fabricated and demonstrated. Due to the employed InGaAs dual quantum-well delta-doped-channel structure and Schottky behaviors of InGaP {"}insulator{"}, good DC properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over wide operating temperature region (300<T<450K). Therefore, the studied device provides the promise for high-temperature and high-performance microwave electronic applications.",

author = "Cheng, {Chin Chuan} and Cheng, {Shiou Ying} and Chuang, {Hung Ming} and Chen, {Chun Yuan} and Lai, {Po Hsien} and Kao, {Chung I.} and Hong, {Ching Wen} and Chen, {Chun Wei} and Liu, {Wen Chau}",

year = "2004",

doi = "10.1117/12.522021",

language = "English",

volume = "5274",

pages = "407--415",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Microelectronics: Design, Technology and Packaging ; Conference date: 10-12-2003 Through 12-12-2003",

}

TY - JOUR

T1 - InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor

AU - Cheng, Chin Chuan

AU - Cheng, Shiou Ying

AU - Chuang, Hung Ming

AU - Chen, Chun Yuan

AU - Lai, Po Hsien

AU - Kao, Chung I.

AU - Hong, Ching Wen

AU - Chen, Chun Wei

AU - Liu, Wen Chau

PY - 2004

Y1 - 2004

N2 - An interesting InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor is fabricated and demonstrated. Due to the employed InGaAs dual quantum-well delta-doped-channel structure and Schottky behaviors of InGaP "insulator", good DC properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over wide operating temperature region (300<T<450K). Therefore, the studied device provides the promise for high-temperature and high-performance microwave electronic applications.

AB - An interesting InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor is fabricated and demonstrated. Due to the employed InGaAs dual quantum-well delta-doped-channel structure and Schottky behaviors of InGaP "insulator", good DC properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over wide operating temperature region (300<T<450K). Therefore, the studied device provides the promise for high-temperature and high-performance microwave electronic applications.

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UR - http://www.scopus.com/inward/citedby.url?scp=2442587392&partnerID=8YFLogxK

U2 - 10.1117/12.522021

DO - 10.1117/12.522021

M3 - Conference article

AN - SCOPUS:2442587392

VL - 5274

SP - 407

EP - 415

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

T2 - Microelectronics: Design, Technology and Packaging

Y2 - 10 December 2003 through 12 December 2003

ER -

InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor

Abstract

All Science Journal Classification (ASJC) codes

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