InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor

Chin Chuan Cheng, Shiou Ying Cheng, Hung Ming Chuang, Chun Yuan Chen, Po Hsien Lai, Chung I. Kao, Ching Wen Hong, Chun Wei Chen, Wen Chau Liu

Research output: Contribution to journalConference articlepeer-review

Abstract

An interesting InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor is fabricated and demonstrated. Due to the employed InGaAs dual quantum-well delta-doped-channel structure and Schottky behaviors of InGaP "insulator", good DC properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over wide operating temperature region (300<T<450K). Therefore, the studied device provides the promise for high-temperature and high-performance microwave electronic applications.

Original languageEnglish
Pages (from-to)407-415
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5274
DOIs
Publication statusPublished - 2004
EventMicroelectronics: Design, Technology and Packaging - Perth, WA, Australia
Duration: 2003 Dec 102003 Dec 12

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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