InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor

Chin Chuan Cheng, Shiou Ying Cheng, Hung Ming Chuang, Chun Yuan Chen, Po Hsien Lai, Chung I. Kao, Ching Wen Hong, Chun Wei Chen, Wen-Chau Liu

Research output: Contribution to journalConference article

Abstract

An interesting InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor is fabricated and demonstrated. Due to the employed InGaAs dual quantum-well delta-doped-channel structure and Schottky behaviors of InGaP "insulator", good DC properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over wide operating temperature region (300<T<450K). Therefore, the studied device provides the promise for high-temperature and high-performance microwave electronic applications.

Original languageEnglish
Pages (from-to)407-415
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5274
DOIs
Publication statusPublished - 2004 Jun 1
EventMicroelectronics: Design, Technology and Packaging - Perth, WA, Australia
Duration: 2003 Dec 102003 Dec 12

Fingerprint

Field-effect Transistor
InGaAs
Quantum Well
Field effect transistors
Semiconductor quantum wells
field effect transistors
quantum wells
Leakage Current
Low Voltage
Insulator
data simulation
operating temperature
Linearity
low voltage
Microwave
simulators
linearity
Simulator
leakage
High Performance

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Cheng, Chin Chuan ; Cheng, Shiou Ying ; Chuang, Hung Ming ; Chen, Chun Yuan ; Lai, Po Hsien ; Kao, Chung I. ; Hong, Ching Wen ; Chen, Chun Wei ; Liu, Wen-Chau. / InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor. In: Proceedings of SPIE - The International Society for Optical Engineering. 2004 ; Vol. 5274. pp. 407-415.
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author = "Cheng, {Chin Chuan} and Cheng, {Shiou Ying} and Chuang, {Hung Ming} and Chen, {Chun Yuan} and Lai, {Po Hsien} and Kao, {Chung I.} and Hong, {Ching Wen} and Chen, {Chun Wei} and Wen-Chau Liu",
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InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor. / Cheng, Chin Chuan; Cheng, Shiou Ying; Chuang, Hung Ming; Chen, Chun Yuan; Lai, Po Hsien; Kao, Chung I.; Hong, Ching Wen; Chen, Chun Wei; Liu, Wen-Chau.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5274, 01.06.2004, p. 407-415.

Research output: Contribution to journalConference article

TY - JOUR

T1 - InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor

AU - Cheng, Chin Chuan

AU - Cheng, Shiou Ying

AU - Chuang, Hung Ming

AU - Chen, Chun Yuan

AU - Lai, Po Hsien

AU - Kao, Chung I.

AU - Hong, Ching Wen

AU - Chen, Chun Wei

AU - Liu, Wen-Chau

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N2 - An interesting InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor is fabricated and demonstrated. Due to the employed InGaAs dual quantum-well delta-doped-channel structure and Schottky behaviors of InGaP "insulator", good DC properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over wide operating temperature region (300<T<450K). Therefore, the studied device provides the promise for high-temperature and high-performance microwave electronic applications.

AB - An interesting InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor is fabricated and demonstrated. Due to the employed InGaAs dual quantum-well delta-doped-channel structure and Schottky behaviors of InGaP "insulator", good DC properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over wide operating temperature region (300<T<450K). Therefore, the studied device provides the promise for high-temperature and high-performance microwave electronic applications.

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