Abstract
An interesting InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor is fabricated and demonstrated. Due to the employed InGaAs dual quantum-well delta-doped-channel structure and Schottky behaviors of InGaP "insulator", good DC properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over wide operating temperature region (300<T<450K). Therefore, the studied device provides the promise for high-temperature and high-performance microwave electronic applications.
| Original language | English |
|---|---|
| Pages (from-to) | 407-415 |
| Number of pages | 9 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 5274 |
| DOIs | |
| Publication status | Published - 2004 Jun 1 |
| Event | Microelectronics: Design, Technology and Packaging - Perth, WA, Australia Duration: 2003 Dec 10 → 2003 Dec 12 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
Cite this
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InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor. / Cheng, Chin Chuan; Cheng, Shiou Ying; Chuang, Hung Ming; Chen, Chun Yuan; Lai, Po Hsien; Kao, Chung I.; Hong, Ching Wen; Chen, Chun Wei; Liu, Wen-Chau.
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5274, 01.06.2004, p. 407-415.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor
AU - Cheng, Chin Chuan
AU - Cheng, Shiou Ying
AU - Chuang, Hung Ming
AU - Chen, Chun Yuan
AU - Lai, Po Hsien
AU - Kao, Chung I.
AU - Hong, Ching Wen
AU - Chen, Chun Wei
AU - Liu, Wen-Chau
PY - 2004/6/1
Y1 - 2004/6/1
N2 - An interesting InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor is fabricated and demonstrated. Due to the employed InGaAs dual quantum-well delta-doped-channel structure and Schottky behaviors of InGaP "insulator", good DC properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over wide operating temperature region (300<T<450K). Therefore, the studied device provides the promise for high-temperature and high-performance microwave electronic applications.
AB - An interesting InGaP/InGaAs quantum-well delta-doped-channel field-effect transistor is fabricated and demonstrated. Due to the employed InGaAs dual quantum-well delta-doped-channel structure and Schottky behaviors of InGaP "insulator", good DC properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over wide operating temperature region (300<T<450K). Therefore, the studied device provides the promise for high-temperature and high-performance microwave electronic applications.
UR - http://www.scopus.com/inward/record.url?scp=2442587392&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=2442587392&partnerID=8YFLogxK
U2 - 10.1117/12.522021
DO - 10.1117/12.522021
M3 - Conference article
AN - SCOPUS:2442587392
VL - 5274
SP - 407
EP - 415
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
SN - 0277-786X
ER -