InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor

H. M. Chuang; K. H. Yu; K. W. Lin; C. C. Cheng; J. Y. Chen; W. C. Liu

InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor

H. M. Chuang, K. H. Yu, K. W. Lin, C. C. Cheng, J. Y. Chen, W. C. Liu

Institute of Microelectronics

Research output: Contribution to journal › Conference article › peer-review

Abstract

The device characteristics of a novel InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor (PHEMT) are reported. The double InGaAs layers are used to increase the total channel thickness. Experimentally, a flat and wide transconductance and microwave operation regimes over 300 mA/mm are obtained. In addition, the compression of transconductance and frequency response are insignificant even operated at high forward gate-source voltage of +2.0V. Therefore, the studied device provides the promise for microwave circuit applications.

Original language	English
Pages (from-to)	271-274
Number of pages	4
Journal	Institute of Physics Conference Series
Volume	174
Publication status	Published - 2003
Event	Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors - Lausanne, Switzerland Duration: 2002 Oct 7 → 2002 Oct 10

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Cite this

@article{03dc11ff3b5742aea39302ba93874d30,

title = "InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor",

abstract = "The device characteristics of a novel InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor (PHEMT) are reported. The double InGaAs layers are used to increase the total channel thickness. Experimentally, a flat and wide transconductance and microwave operation regimes over 300 mA/mm are obtained. In addition, the compression of transconductance and frequency response are insignificant even operated at high forward gate-source voltage of +2.0V. Therefore, the studied device provides the promise for microwave circuit applications.",

author = "Chuang, {H. M.} and Yu, {K. H.} and Lin, {K. W.} and Cheng, {C. C.} and Chen, {J. Y.} and Liu, {W. C.}",

year = "2003",

language = "English",

volume = "174",

pages = "271--274",

journal = "Institute of Physics Conference Series",

issn = "0951-3248",

publisher = "IOP Publishing Ltd.",

note = "Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors ; Conference date: 07-10-2002 Through 10-10-2002",

}

TY - JOUR

T1 - InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor

AU - Chuang, H. M.

AU - Yu, K. H.

AU - Lin, K. W.

AU - Cheng, C. C.

AU - Chen, J. Y.

AU - Liu, W. C.

PY - 2003

Y1 - 2003

N2 - The device characteristics of a novel InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor (PHEMT) are reported. The double InGaAs layers are used to increase the total channel thickness. Experimentally, a flat and wide transconductance and microwave operation regimes over 300 mA/mm are obtained. In addition, the compression of transconductance and frequency response are insignificant even operated at high forward gate-source voltage of +2.0V. Therefore, the studied device provides the promise for microwave circuit applications.

AB - The device characteristics of a novel InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor (PHEMT) are reported. The double InGaAs layers are used to increase the total channel thickness. Experimentally, a flat and wide transconductance and microwave operation regimes over 300 mA/mm are obtained. In addition, the compression of transconductance and frequency response are insignificant even operated at high forward gate-source voltage of +2.0V. Therefore, the studied device provides the promise for microwave circuit applications.

UR - http://www.scopus.com/inward/record.url?scp=10444248117&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=10444248117&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:10444248117

SN - 0951-3248

VL - 174

SP - 271

EP - 274

JO - Institute of Physics Conference Series

JF - Institute of Physics Conference Series

T2 - Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors

Y2 - 7 October 2002 through 10 October 2002

ER -

InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor

Abstract

All Science Journal Classification (ASJC) codes

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