InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor with a liquid phase oxidized InGaP gate

Kuan Wei Lee, Yu Ju Lin, Nan Ying Yang, Yu Chang Lee, Po Wen Sze, Yeong-Her Wang, Mau-phon Houng

Research output: Contribution to conferencePaper

5 Citations (Scopus)

Abstract

InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistors (MOS-PHEMTs) are reported. The gate dielectric is formed by oxidizing InGaP material in liquid phase. As compared to its counterpart PHEMTs, the MOS-PHEMTs with a larger gate swing voltage, a lower gate leakage current and a higher breakdown voltage can be observed. Consequentially, the studied MOS-PHEMT provides the promise for high-power applications.

Original languageEnglish
Pages2301-2304
Number of pages4
Publication statusPublished - 2004 Dec 1
Event2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
Duration: 2004 Oct 182004 Oct 21

Other

Other2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
CountryChina
CityBeijing
Period04-10-1804-10-21

Fingerprint

High electron mobility transistors
Liquids
Metals
Gate dielectrics
Electric breakdown
Leakage currents
Electric potential
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Lee, K. W., Lin, Y. J., Yang, N. Y., Lee, Y. C., Sze, P. W., Wang, Y-H., & Houng, M. (2004). InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor with a liquid phase oxidized InGaP gate. 2301-2304. Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.
Lee, Kuan Wei ; Lin, Yu Ju ; Yang, Nan Ying ; Lee, Yu Chang ; Sze, Po Wen ; Wang, Yeong-Her ; Houng, Mau-phon. / InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor with a liquid phase oxidized InGaP gate. Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.4 p.
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title = "InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor with a liquid phase oxidized InGaP gate",
abstract = "InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistors (MOS-PHEMTs) are reported. The gate dielectric is formed by oxidizing InGaP material in liquid phase. As compared to its counterpart PHEMTs, the MOS-PHEMTs with a larger gate swing voltage, a lower gate leakage current and a higher breakdown voltage can be observed. Consequentially, the studied MOS-PHEMT provides the promise for high-power applications.",
author = "Lee, {Kuan Wei} and Lin, {Yu Ju} and Yang, {Nan Ying} and Lee, {Yu Chang} and Sze, {Po Wen} and Yeong-Her Wang and Mau-phon Houng",
year = "2004",
month = "12",
day = "1",
language = "English",
pages = "2301--2304",
note = "2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 ; Conference date: 18-10-2004 Through 21-10-2004",

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Lee, KW, Lin, YJ, Yang, NY, Lee, YC, Sze, PW, Wang, Y-H & Houng, M 2004, 'InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor with a liquid phase oxidized InGaP gate' Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China, 04-10-18 - 04-10-21, pp. 2301-2304.

InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor with a liquid phase oxidized InGaP gate. / Lee, Kuan Wei; Lin, Yu Ju; Yang, Nan Ying; Lee, Yu Chang; Sze, Po Wen; Wang, Yeong-Her; Houng, Mau-phon.

2004. 2301-2304 Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.

Research output: Contribution to conferencePaper

TY - CONF

T1 - InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor with a liquid phase oxidized InGaP gate

AU - Lee, Kuan Wei

AU - Lin, Yu Ju

AU - Yang, Nan Ying

AU - Lee, Yu Chang

AU - Sze, Po Wen

AU - Wang, Yeong-Her

AU - Houng, Mau-phon

PY - 2004/12/1

Y1 - 2004/12/1

N2 - InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistors (MOS-PHEMTs) are reported. The gate dielectric is formed by oxidizing InGaP material in liquid phase. As compared to its counterpart PHEMTs, the MOS-PHEMTs with a larger gate swing voltage, a lower gate leakage current and a higher breakdown voltage can be observed. Consequentially, the studied MOS-PHEMT provides the promise for high-power applications.

AB - InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistors (MOS-PHEMTs) are reported. The gate dielectric is formed by oxidizing InGaP material in liquid phase. As compared to its counterpart PHEMTs, the MOS-PHEMTs with a larger gate swing voltage, a lower gate leakage current and a higher breakdown voltage can be observed. Consequentially, the studied MOS-PHEMT provides the promise for high-power applications.

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Lee KW, Lin YJ, Yang NY, Lee YC, Sze PW, Wang Y-H et al. InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor with a liquid phase oxidized InGaP gate. 2004. Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.