InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor with a liquid phase oxidized InGaP gate

Kuan Wei Lee, Yu Ju Lin, Nan Ying Yang, Yu Chang Lee, Po Wen Sze, Yeong-Her Wang, Mau-phon Houng

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistors (MOS-PHEMTs) are reported. The gate dielectric is formed by oxidizing InGaP material in liquid phase. As compared to its counterpart PHEMTs, the MOS-PHEMTs with a larger gate swing voltage, a lower gate leakage current and a higher breakdown voltage can be observed. Consequentially, the studied MOS-PHEMT provides the promise for high-power applications.

Original languageEnglish
Pages2301-2304
Number of pages4
Publication statusPublished - 2004 Dec 1
Event2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
Duration: 2004 Oct 182004 Oct 21

Other

Other2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
CountryChina
CityBeijing
Period04-10-1804-10-21

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Lee, K. W., Lin, Y. J., Yang, N. Y., Lee, Y. C., Sze, P. W., Wang, Y-H., & Houng, M. (2004). InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor with a liquid phase oxidized InGaP gate. 2301-2304. Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.