InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistors (MOS-PHEMTs) are reported. The gate dielectric is formed by oxidizing InGaP material in liquid phase. As compared to its counterpart PHEMTs, the MOS-PHEMTs with a larger gate swing voltage, a lower gate leakage current and a higher breakdown voltage can be observed. Consequentially, the studied MOS-PHEMT provides the promise for high-power applications.
|Number of pages||4|
|Publication status||Published - 2004 Dec 1|
|Event||2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China|
Duration: 2004 Oct 18 → 2004 Oct 21
|Other||2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004|
|Period||04-10-18 → 04-10-21|
All Science Journal Classification (ASJC) codes