InGaZnO Ferroelectric Thin-Film Transistor Using HfO/AlO/AlN Hybrid Gate Dielectric Stack With Ultra-Large Memory Window

Min Lu Kao; Yan Kui Liang; Yuan Lin; You Chen Weng; Chang Fu Dee; Po Tsun Liu; Ching Ting Lee; Edward Yi Chang

doi:10.1109/LED.2022.3216620

InGaZnO Ferroelectric Thin-Film Transistor Using HfO/AlO/AlN Hybrid Gate Dielectric Stack With Ultra-Large Memory Window

Min Lu Kao, Yan Kui Liang, Yuan Lin, You Chen Weng, Chang Fu Dee, Po Tsun Liu, Ching Ting Lee, Edward Yi Chang

Department of Photonics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this letter, HfO2/Al2O3/AlN hybrid stack capacitor with ferroelectric switching is experimentally demonstrated for the first time. The metal-insulator-semiconductor (MIS) capacitors and InGaZnO4 (IGZO) channel thin-film transistors (TFTs) with the HfO2/Al2O3/AlN hybrid gate stack are demonstrated in this letter. With the hybrid gate stack, the TFT exhibits the clear counter-clockwise memory windows (MWs) of 6.5 V, 6.2 V and 28.7 V respectively measured at 368 K, RT, and 80 K under the sweep voltage of ±40 V. Moreover, the retention over 104 s and the endurance over 104 cycles are demonstrated under the program (P)/erase (E) pulsed height of ±45 V. The results exhibit the applicable possibility of the HfO2/Al2O3/AlN stack for the high voltage memory device applications.

Original language	English
Pages (from-to)	2105-2108
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	43
Issue number	12
DOIs	https://doi.org/10.1109/LED.2022.3216620
Publication status	Published - 2022 Dec 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2022.3216620

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title = "InGaZnO Ferroelectric Thin-Film Transistor Using HfO/AlO/AlN Hybrid Gate Dielectric Stack With Ultra-Large Memory Window",

abstract = "In this letter, HfO2/Al2O3/AlN hybrid stack capacitor with ferroelectric switching is experimentally demonstrated for the first time. The metal-insulator-semiconductor (MIS) capacitors and InGaZnO4 (IGZO) channel thin-film transistors (TFTs) with the HfO2/Al2O3/AlN hybrid gate stack are demonstrated in this letter. With the hybrid gate stack, the TFT exhibits the clear counter-clockwise memory windows (MWs) of 6.5 V, 6.2 V and 28.7 V respectively measured at 368 K, RT, and 80 K under the sweep voltage of ±40 V. Moreover, the retention over 104 s and the endurance over 104 cycles are demonstrated under the program (P)/erase (E) pulsed height of ±45 V. The results exhibit the applicable possibility of the HfO2/Al2O3/AlN stack for the high voltage memory device applications.",

author = "Kao, {Min Lu} and Liang, {Yan Kui} and Yuan Lin and Weng, {You Chen} and Dee, {Chang Fu} and Liu, {Po Tsun} and Lee, {Ching Ting} and Chang, {Edward Yi}",

note = "Funding Information: This work was supported in part by the Center for the Semiconductor Technology Research from The Featured Areas Research Center Program within the Framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan; in part by the Ministry of Science and Technology, Taiwan, under Grant MOST 111-2634-F-A49-008 and Grant 110-2622-8-009- 018-SB; and in part by the National Chung-Shan Institute of Science and Technology, Taiwan, under Grant NCSIST-403-V309(110). Publisher Copyright: {\textcopyright} 2022 IEEE.",

year = "2022",

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doi = "10.1109/LED.2022.3216620",

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T1 - InGaZnO Ferroelectric Thin-Film Transistor Using HfO/AlO/AlN Hybrid Gate Dielectric Stack With Ultra-Large Memory Window

AU - Kao, Min Lu

AU - Liang, Yan Kui

AU - Lin, Yuan

AU - Weng, You Chen

AU - Dee, Chang Fu

AU - Liu, Po Tsun

AU - Lee, Ching Ting

AU - Chang, Edward Yi

N1 - Funding Information: This work was supported in part by the Center for the Semiconductor Technology Research from The Featured Areas Research Center Program within the Framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan; in part by the Ministry of Science and Technology, Taiwan, under Grant MOST 111-2634-F-A49-008 and Grant 110-2622-8-009- 018-SB; and in part by the National Chung-Shan Institute of Science and Technology, Taiwan, under Grant NCSIST-403-V309(110). Publisher Copyright: © 2022 IEEE.

PY - 2022/12/1

Y1 - 2022/12/1

N2 - In this letter, HfO2/Al2O3/AlN hybrid stack capacitor with ferroelectric switching is experimentally demonstrated for the first time. The metal-insulator-semiconductor (MIS) capacitors and InGaZnO4 (IGZO) channel thin-film transistors (TFTs) with the HfO2/Al2O3/AlN hybrid gate stack are demonstrated in this letter. With the hybrid gate stack, the TFT exhibits the clear counter-clockwise memory windows (MWs) of 6.5 V, 6.2 V and 28.7 V respectively measured at 368 K, RT, and 80 K under the sweep voltage of ±40 V. Moreover, the retention over 104 s and the endurance over 104 cycles are demonstrated under the program (P)/erase (E) pulsed height of ±45 V. The results exhibit the applicable possibility of the HfO2/Al2O3/AlN stack for the high voltage memory device applications.

AB - In this letter, HfO2/Al2O3/AlN hybrid stack capacitor with ferroelectric switching is experimentally demonstrated for the first time. The metal-insulator-semiconductor (MIS) capacitors and InGaZnO4 (IGZO) channel thin-film transistors (TFTs) with the HfO2/Al2O3/AlN hybrid gate stack are demonstrated in this letter. With the hybrid gate stack, the TFT exhibits the clear counter-clockwise memory windows (MWs) of 6.5 V, 6.2 V and 28.7 V respectively measured at 368 K, RT, and 80 K under the sweep voltage of ±40 V. Moreover, the retention over 104 s and the endurance over 104 cycles are demonstrated under the program (P)/erase (E) pulsed height of ±45 V. The results exhibit the applicable possibility of the HfO2/Al2O3/AlN stack for the high voltage memory device applications.

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InGaZnO Ferroelectric Thin-Film Transistor Using HfO/AlO/AlN Hybrid Gate Dielectric Stack With Ultra-Large Memory Window

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