InGaZnO metal-base transistor with high current gain

H. Y. Huang; S. J. Wang; C. H. Hung; C. H. Wu; W. C. Lin

doi:10.1049/el.2014.2201

InGaZnO metal-base transistor with high current gain

H. Y. Huang, S. J. Wang, C. H. Hung, C. H. Wu, W. C. Lin

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

Abstract

The fabrication of metal-base transistors (MBTs) based on InGaZnO at room temperature is reported for the first time. With a suitable oxygen doping to the sputtering-deposited InGaZnO film and an HfSiO interlayer, improved diode performances with enhanced Schottky barrier heights of 0.70 and 0.66 eV are obtained for the base/collector (Ti/InGaZnO) and base/emitter (Au/HfSiO/InGaZnO) junctions, respectively. InGaZnO MBT using a Ti(10 nm)/Au(10 m)/HfSiO(5 nm) dual metal base shows a high common-emitter current gain (β) 840-310 at VCE = 2 V and IB ranging from 1 to 10 nA.

Original language	English
Pages (from-to)	1465-1467
Number of pages	3
Journal	Electronics Letters
Volume	50
Issue number	20
DOIs	https://doi.org/10.1049/el.2014.2201
Publication status	Published - 2014 Sept 25

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el.2014.2201

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title = "InGaZnO metal-base transistor with high current gain",

abstract = "The fabrication of metal-base transistors (MBTs) based on InGaZnO at room temperature is reported for the first time. With a suitable oxygen doping to the sputtering-deposited InGaZnO film and an HfSiO interlayer, improved diode performances with enhanced Schottky barrier heights of 0.70 and 0.66 eV are obtained for the base/collector (Ti/InGaZnO) and base/emitter (Au/HfSiO/InGaZnO) junctions, respectively. InGaZnO MBT using a Ti(10 nm)/Au(10 m)/HfSiO(5 nm) dual metal base shows a high common-emitter current gain (β) 840-310 at VCE = 2 V and IB ranging from 1 to 10 nA.",

author = "Huang, {H. Y.} and Wang, {S. J.} and Hung, {C. H.} and Wu, {C. H.} and Lin, {W. C.}",

note = "Publisher Copyright: {\textcopyright} 2014 The Institution of Engineering and Technology.",

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doi = "10.1049/el.2014.2201",

language = "English",

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TY - JOUR

T1 - InGaZnO metal-base transistor with high current gain

AU - Huang, H. Y.

AU - Wang, S. J.

AU - Hung, C. H.

AU - Wu, C. H.

AU - Lin, W. C.

PY - 2014/9/25

Y1 - 2014/9/25

N2 - The fabrication of metal-base transistors (MBTs) based on InGaZnO at room temperature is reported for the first time. With a suitable oxygen doping to the sputtering-deposited InGaZnO film and an HfSiO interlayer, improved diode performances with enhanced Schottky barrier heights of 0.70 and 0.66 eV are obtained for the base/collector (Ti/InGaZnO) and base/emitter (Au/HfSiO/InGaZnO) junctions, respectively. InGaZnO MBT using a Ti(10 nm)/Au(10 m)/HfSiO(5 nm) dual metal base shows a high common-emitter current gain (β) 840-310 at VCE = 2 V and IB ranging from 1 to 10 nA.

AB - The fabrication of metal-base transistors (MBTs) based on InGaZnO at room temperature is reported for the first time. With a suitable oxygen doping to the sputtering-deposited InGaZnO film and an HfSiO interlayer, improved diode performances with enhanced Schottky barrier heights of 0.70 and 0.66 eV are obtained for the base/collector (Ti/InGaZnO) and base/emitter (Au/HfSiO/InGaZnO) junctions, respectively. InGaZnO MBT using a Ti(10 nm)/Au(10 m)/HfSiO(5 nm) dual metal base shows a high common-emitter current gain (β) 840-310 at VCE = 2 V and IB ranging from 1 to 10 nA.

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SP - 1465

EP - 1467

JO - Electronics Letters

JF - Electronics Letters

IS - 20

ER -

InGaZnO metal-base transistor with high current gain

Abstract

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