InGaZnO metal-base transistor with high current gain

H. Y. Huang, Shui-Jinn Wang, C. H. Hung, C. H. Wu, W. C. Lin

Research output: Contribution to journalArticle

Abstract

The fabrication of metal-base transistors (MBTs) based on InGaZnO at room temperature is reported for the first time. With a suitable oxygen doping to the sputtering-deposited InGaZnO film and an HfSiO interlayer, improved diode performances with enhanced Schottky barrier heights of 0.70 and 0.66 eV are obtained for the base/collector (Ti/InGaZnO) and base/emitter (Au/HfSiO/InGaZnO) junctions, respectively. InGaZnO MBT using a Ti(10 nm)/Au(10 m)/HfSiO(5 nm) dual metal base shows a high common-emitter current gain (β) 840-310 at VCE = 2 V and IB ranging from 1 to 10 nA.

Original languageEnglish
Pages (from-to)1465-1467
Number of pages3
JournalElectronics Letters
Volume50
Issue number20
DOIs
Publication statusPublished - 2014 Sep 25

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Transistors
Metals
Sputtering
Diodes
Doping (additives)
Fabrication
Oxygen
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Huang, H. Y., Wang, S-J., Hung, C. H., Wu, C. H., & Lin, W. C. (2014). InGaZnO metal-base transistor with high current gain. Electronics Letters, 50(20), 1465-1467. https://doi.org/10.1049/el.2014.2201
Huang, H. Y. ; Wang, Shui-Jinn ; Hung, C. H. ; Wu, C. H. ; Lin, W. C. / InGaZnO metal-base transistor with high current gain. In: Electronics Letters. 2014 ; Vol. 50, No. 20. pp. 1465-1467.
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Huang, HY, Wang, S-J, Hung, CH, Wu, CH & Lin, WC 2014, 'InGaZnO metal-base transistor with high current gain', Electronics Letters, vol. 50, no. 20, pp. 1465-1467. https://doi.org/10.1049/el.2014.2201

InGaZnO metal-base transistor with high current gain. / Huang, H. Y.; Wang, Shui-Jinn; Hung, C. H.; Wu, C. H.; Lin, W. C.

In: Electronics Letters, Vol. 50, No. 20, 25.09.2014, p. 1465-1467.

Research output: Contribution to journalArticle

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AU - Huang, H. Y.

AU - Wang, Shui-Jinn

AU - Hung, C. H.

AU - Wu, C. H.

AU - Lin, W. C.

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AB - The fabrication of metal-base transistors (MBTs) based on InGaZnO at room temperature is reported for the first time. With a suitable oxygen doping to the sputtering-deposited InGaZnO film and an HfSiO interlayer, improved diode performances with enhanced Schottky barrier heights of 0.70 and 0.66 eV are obtained for the base/collector (Ti/InGaZnO) and base/emitter (Au/HfSiO/InGaZnO) junctions, respectively. InGaZnO MBT using a Ti(10 nm)/Au(10 m)/HfSiO(5 nm) dual metal base shows a high common-emitter current gain (β) 840-310 at VCE = 2 V and IB ranging from 1 to 10 nA.

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