Inherent Dipole Layer Formation Driven by Surface Energy at Nonplanar Dielectric Interface

Yu Fang, Wen Jay Lee, An Chen Yang, Guan Peng Chen, Nan Yow Chen, Kuo Hsing Kao

Research output: Contribution to journalArticlepeer-review

Abstract

This work investigates the correlation between dipole formation and surface energy at a nonplanar dielectric interface on a Si nanowire (NW) by means of molecular dynamics simulations. According to the atom and charge distribution obtained by simulations, the built-in electric field and potential are calculated at the dielectric interface based on the Poisson equation. It is found that the built-in potential is dependent on the diameter of the Si NW, which is attributed to the dependence of the surface energy difference on the surface curvature of the dielectric heterointerface, driving atom diffusion and leading to a dipole layer at the interface. The impact of the built-in potential on the threshold voltage of a transistor with a multigate configuration is discussed as well.

Original languageEnglish
Article number9288738
Pages (from-to)294-298
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume68
Issue number1
DOIs
Publication statusPublished - 2021 Jan

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Inherent Dipole Layer Formation Driven by Surface Energy at Nonplanar Dielectric Interface'. Together they form a unique fingerprint.

Cite this