Inherent formation of porous p-type Si nanowires using palladium-assisted chemical etching

Jun Ming Chen, Chia Yuan Chen, C. P. Wong, Chia Yun Chen

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


Porous silicon (Si) nanowire arrays were directly fabricated from lightly p-doped Si substrates using a palladium (Pd)-assisted chemical etching at room temperature. The mechanistic studies indicated that anodic dissolution of Si was established by the accumulated positive charges at Pd/Si schottky interfaces in the presence of H2O2 oxidants. In addition to the primary etching direction vertically to the substrate planes, the additional sidewall etching was stimulated by the separated Pd nanoparticles during reaction that constitutes the porous features covering on the nanowires surfaces thoroughly. These combined effects lead to the distinct etching characteristics and remarkable photoluminescent properties of resulted nanostructures.

Original languageEnglish
Pages (from-to)498-502
Number of pages5
JournalApplied Surface Science
Publication statusPublished - 2017 Jan 15

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces


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