Initial time-dependent current growth phenomenon in n -type organic transistors induced by interfacial dipole effects

Yi Sheng Lin, Bo Liang Yeh, Min Ruei Tsai, Horng-Long Cheng, Shyh Jiun Liu, Fu-Ching Tang, Wei-Yang Chou

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We describe an unusual phenomenon of time-dependent current growth in organic transistors, particularly n-type transistors. For an organic transistor based on N,N-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide with a polyimide dielectric layer, the time-dependent increase in the drain current and an approximately hysteresis-free electricity were obtained under dc-bias stress. These phenomena could be attributed to (a) reduction in the trap-state density located at the interface between polyimide and semiconductor, (b) gate field effect enhanced by electric dipoles within polyimide, and (c) a low interface trap lifetime. This study reveals that polymer dielectrics with moderate polar groups are suitable for application in stable organic devices.

Original languageEnglish
Article number104507
JournalJournal of Applied Physics
Volume117
Issue number10
DOIs
Publication statusPublished - 2015 Mar 14

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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