InN grown on GaN/sapphire templates at different temperatures by MOCVD

J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, W. R. Chen, Y. C. Cheng, W. J. Lin, Y. C. Tzeng, H. Y. Shin, C. M. Chang

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13 Citations (Scopus)


InN epitaxial layers were grown on GaN/sapphire templates by metalorganic chemical vapor deposition (MOCVD) at various temperatures. It was found that surfaces of these samples were all reticular and the sample surface became rougher as we increased the growth temperature. It was also found that growth rate increased with increasing growth temperature and the growth rate could reach 470 nm/h for the InN epitaxial layer grown at 675 °C. Furthermore, it was found that we achieved the highest mobility of 1300 cm2/Vs and the lowest carrier concentration of 4.6 × 1018 cm-3 from the InN epitaxial layer grown at 625 °C.

Original languageEnglish
Pages (from-to)517-520
Number of pages4
JournalOptical Materials
Issue number4
Publication statusPublished - 2007 Dec

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering


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