InN grown on GaN/sapphire templates at different temperatures by MOCVD

J. C. Lin; Y. K. Su; S. J. Chang; W. H. Lan; W. R. Chen; Y. C. Cheng; W. J. Lin; Y. C. Tzeng; H. Y. Shin; C. M. Chang

doi:10.1016/j.optmat.2006.12.008

InN grown on GaN/sapphire templates at different temperatures by MOCVD

J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, W. R. Chen, Y. C. Cheng, W. J. Lin, Y. C. Tzeng, H. Y. Shin, C. M. Chang

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13 Citations (Scopus)

Abstract

InN epitaxial layers were grown on GaN/sapphire templates by metalorganic chemical vapor deposition (MOCVD) at various temperatures. It was found that surfaces of these samples were all reticular and the sample surface became rougher as we increased the growth temperature. It was also found that growth rate increased with increasing growth temperature and the growth rate could reach 470 nm/h for the InN epitaxial layer grown at 675 °C. Furthermore, it was found that we achieved the highest mobility of 1300 cm²/Vs and the lowest carrier concentration of 4.6 × 10¹⁸ cm^-3 from the InN epitaxial layer grown at 625 °C.

Original language	English
Pages (from-to)	517-520
Number of pages	4
Journal	Optical Materials
Volume	30
Issue number	4
DOIs	https://doi.org/10.1016/j.optmat.2006.12.008
Publication status	Published - 2007 Dec

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Spectroscopy
Physical and Theoretical Chemistry
Organic Chemistry
Inorganic Chemistry
Electrical and Electronic Engineering

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10.1016/j.optmat.2006.12.008

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@article{3bb75ae8ad4b4571a2c90564960f1e92,

title = "InN grown on GaN/sapphire templates at different temperatures by MOCVD",

abstract = "InN epitaxial layers were grown on GaN/sapphire templates by metalorganic chemical vapor deposition (MOCVD) at various temperatures. It was found that surfaces of these samples were all reticular and the sample surface became rougher as we increased the growth temperature. It was also found that growth rate increased with increasing growth temperature and the growth rate could reach 470 nm/h for the InN epitaxial layer grown at 675 °C. Furthermore, it was found that we achieved the highest mobility of 1300 cm2/Vs and the lowest carrier concentration of 4.6 × 1018 cm-3 from the InN epitaxial layer grown at 625 °C.",

author = "Lin, {J. C.} and Su, {Y. K.} and Chang, {S. J.} and Lan, {W. H.} and Chen, {W. R.} and Cheng, {Y. C.} and Lin, {W. J.} and Tzeng, {Y. C.} and Shin, {H. Y.} and Chang, {C. M.}",

note = "Funding Information: This work was supported by the Center for Micro/Nano Technology Research, National Cheng Kung University, under projects from the Ministry of Education and the National Science Council (NSC 93-212-M-006-006) of Taiwan.",

year = "2007",

month = dec,

doi = "10.1016/j.optmat.2006.12.008",

language = "English",

volume = "30",

pages = "517--520",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier BV",

number = "4",

}

TY - JOUR

T1 - InN grown on GaN/sapphire templates at different temperatures by MOCVD

AU - Lin, J. C.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Lan, W. H.

AU - Chen, W. R.

AU - Cheng, Y. C.

AU - Lin, W. J.

AU - Tzeng, Y. C.

AU - Shin, H. Y.

AU - Chang, C. M.

N1 - Funding Information: This work was supported by the Center for Micro/Nano Technology Research, National Cheng Kung University, under projects from the Ministry of Education and the National Science Council (NSC 93-212-M-006-006) of Taiwan.

PY - 2007/12

Y1 - 2007/12

N2 - InN epitaxial layers were grown on GaN/sapphire templates by metalorganic chemical vapor deposition (MOCVD) at various temperatures. It was found that surfaces of these samples were all reticular and the sample surface became rougher as we increased the growth temperature. It was also found that growth rate increased with increasing growth temperature and the growth rate could reach 470 nm/h for the InN epitaxial layer grown at 675 °C. Furthermore, it was found that we achieved the highest mobility of 1300 cm2/Vs and the lowest carrier concentration of 4.6 × 1018 cm-3 from the InN epitaxial layer grown at 625 °C.

AB - InN epitaxial layers were grown on GaN/sapphire templates by metalorganic chemical vapor deposition (MOCVD) at various temperatures. It was found that surfaces of these samples were all reticular and the sample surface became rougher as we increased the growth temperature. It was also found that growth rate increased with increasing growth temperature and the growth rate could reach 470 nm/h for the InN epitaxial layer grown at 675 °C. Furthermore, it was found that we achieved the highest mobility of 1300 cm2/Vs and the lowest carrier concentration of 4.6 × 1018 cm-3 from the InN epitaxial layer grown at 625 °C.

UR - http://www.scopus.com/inward/record.url?scp=35548947585&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=35548947585&partnerID=8YFLogxK

U2 - 10.1016/j.optmat.2006.12.008

DO - 10.1016/j.optmat.2006.12.008

M3 - Article

AN - SCOPUS:35548947585

SN - 0925-3467

VL - 30

SP - 517

EP - 520

JO - Optical Materials

JF - Optical Materials

IS - 4

ER -

InN grown on GaN/sapphire templates at different temperatures by MOCVD

Abstract

All Science Journal Classification (ASJC) codes

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