InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy

Kuang Wei Liu, Shoou Jinn Chang, Sheng Joue Young, Tao Hung Hsueh, Hung Hung, Yu Chun Mai, Shih Ming Wang, Kuan Jen Chen, Ya Ling Wu, Yue Zhang Chen

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Abstract

The authors report the influence of CrN nanoisland inserted on growth of baseball-bat InN nanorods by plasmaassisted molecular beam epitaxy under In-rich conditions. By inserting CrN nanoislands between AlN nucleation layer and the Si (111) substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec. It is due to the larger strain from lattice miss-match of the film-like InN structure; however, the strain from lattice miss-match was obvious reduced owing to CrN nanoisland inserted. The TEM images confirmed the CrN structures and In droplets dissociation from InN, by these results, we can speculate the growth mechanism of baseball-bat-like InN nanorods.

Original languageEnglish
Article number442
Pages (from-to)1-6
Number of pages6
JournalNanoscale Research Letters
Volume6
DOIs
Publication statusPublished - 2011 Dec 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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    Liu, K. W., Chang, S. J., Young, S. J., Hsueh, T. H., Hung, H., Mai, Y. C., Wang, S. M., Chen, K. J., Wu, Y. L., & Chen, Y. Z. (2011). InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy. Nanoscale Research Letters, 6, 1-6. [442]. https://doi.org/10.1186/1556-276X-6-442