InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy

Kuang Wei Liu; Shoou Jinn Chang; Sheng Joue Young; Tao Hung Hsueh; Hung Hung; Yu Chun Mai; Shih Ming Wang; Kuan Jen Chen; Ya Ling Wu; Yue Zhang Chen

doi:10.1186/1556-276X-6-442

InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy

Kuang Wei Liu, Shoou Jinn Chang, Sheng Joue Young, Tao Hung Hsueh, Hung Hung, Yu Chun Mai, Shih Ming Wang, Kuan Jen Chen, Ya Ling Wu, Yue Zhang Chen

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The authors report the influence of CrN nanoisland inserted on growth of baseball-bat InN nanorods by plasmaassisted molecular beam epitaxy under In-rich conditions. By inserting CrN nanoislands between AlN nucleation layer and the Si (111) substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec. It is due to the larger strain from lattice miss-match of the film-like InN structure; however, the strain from lattice miss-match was obvious reduced owing to CrN nanoisland inserted. The TEM images confirmed the CrN structures and In droplets dissociation from InN, by these results, we can speculate the growth mechanism of baseball-bat-like InN nanorods.

Original language	English
Article number	442
Pages (from-to)	1-6
Number of pages	6
Journal	Nanoscale Research Letters
Volume	6
DOIs	https://doi.org/10.1186/1556-276X-6-442
Publication status	Published - 2011

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics

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title = "InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy",

abstract = "The authors report the influence of CrN nanoisland inserted on growth of baseball-bat InN nanorods by plasmaassisted molecular beam epitaxy under In-rich conditions. By inserting CrN nanoislands between AlN nucleation layer and the Si (111) substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec. It is due to the larger strain from lattice miss-match of the film-like InN structure; however, the strain from lattice miss-match was obvious reduced owing to CrN nanoisland inserted. The TEM images confirmed the CrN structures and In droplets dissociation from InN, by these results, we can speculate the growth mechanism of baseball-bat-like InN nanorods.",

author = "Liu, {Kuang Wei} and Chang, {Shoou Jinn} and Young, {Sheng Joue} and Hsueh, {Tao Hung} and Hung Hung and Mai, {Yu Chun} and Wang, {Shih Ming} and Chen, {Kuan Jen} and Wu, {Ya Ling} and Chen, {Yue Zhang}",

note = "Funding Information: This work was supported by National Science Council of Taiwan under Contract number NSC 99-2218-E-150-003 and NSC 99-2622-E-150-012-CC3. National Formosa University Research and Services Headquarters that provided the partial equipment for measurement is also acknowledged. This work was also supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University (NCKU), Taiwan (D97-2700), and in part by the Advanced Optoelectronic Technology Center, NCKU, under projects from the Ministry of Education.",

year = "2011",

doi = "10.1186/1556-276X-6-442",

language = "English",

volume = "6",

pages = "1--6",

journal = "Nanoscale Research Letters",

issn = "1931-7573",

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TY - JOUR

T1 - InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy

AU - Liu, Kuang Wei

AU - Chang, Shoou Jinn

AU - Young, Sheng Joue

AU - Hsueh, Tao Hung

AU - Hung, Hung

AU - Mai, Yu Chun

AU - Wang, Shih Ming

AU - Chen, Kuan Jen

AU - Wu, Ya Ling

AU - Chen, Yue Zhang

N1 - Funding Information: This work was supported by National Science Council of Taiwan under Contract number NSC 99-2218-E-150-003 and NSC 99-2622-E-150-012-CC3. National Formosa University Research and Services Headquarters that provided the partial equipment for measurement is also acknowledged. This work was also supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University (NCKU), Taiwan (D97-2700), and in part by the Advanced Optoelectronic Technology Center, NCKU, under projects from the Ministry of Education.

PY - 2011

Y1 - 2011

N2 - The authors report the influence of CrN nanoisland inserted on growth of baseball-bat InN nanorods by plasmaassisted molecular beam epitaxy under In-rich conditions. By inserting CrN nanoislands between AlN nucleation layer and the Si (111) substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec. It is due to the larger strain from lattice miss-match of the film-like InN structure; however, the strain from lattice miss-match was obvious reduced owing to CrN nanoisland inserted. The TEM images confirmed the CrN structures and In droplets dissociation from InN, by these results, we can speculate the growth mechanism of baseball-bat-like InN nanorods.

AB - The authors report the influence of CrN nanoisland inserted on growth of baseball-bat InN nanorods by plasmaassisted molecular beam epitaxy under In-rich conditions. By inserting CrN nanoislands between AlN nucleation layer and the Si (111) substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec. It is due to the larger strain from lattice miss-match of the film-like InN structure; however, the strain from lattice miss-match was obvious reduced owing to CrN nanoisland inserted. The TEM images confirmed the CrN structures and In droplets dissociation from InN, by these results, we can speculate the growth mechanism of baseball-bat-like InN nanorods.

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InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy

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