InP/GaAsSb type-II DHBTs with GaAsSb/lnGaAs superlattice-base and GaAsSb bulk-base structures

Jung Hui Tsai, Wen Shiung Lour, Der Feng Guo, Wen Chau Liu, Yi Zhen Wu, Ying Feng Dai

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

High-performance InP/GaAsSb double heteroj unction bipolar transistor (DHBT) employing GaAsSb/lnGaAs superlattice-base structure is demonstrated and compared with GaAsSb bulk-base structure by two-dimensional simulation analysis. The proposed device exhibits a higher current gain of 257 than the conventional InP/GaAsSb type-II DHBT with a lower current gain of 180, attributed to the tynneling behavior of minority carriers in the GaAsSb/lnGaAs superlattice-base region under large forward base-emitter bias. In addition, a larger unity gain cutoff frequency of 19.1 GHz is botained for the superlattice-base device than that of 17.2 GHz for the bulk-base device.

Original languageEnglish
Pages (from-to)1096-1100
Number of pages5
JournalSemiconductors
Volume44
Issue number8
DOIs
Publication statusPublished - 2010 Aug 25

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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