The dc performances of a novel InP/InGaAs double-heterojunction bipolar transistor (DHBT) with the undoped tunneling barrier and composite collector structure are studied and demonstrated. Due to the mass filtering effect for holes, a thin InP tunneling barrier can be used to replace the wide-gap emitter. Experimentally, an extremely small offset voltage of 25 mV and breakdown voltage BVCEO of 9.2 V are obtained. Furthermore, the abrupt junction and δ-doping structure can eliminate carrier blocking effect effectively when electrons transporting across the base-collector heterojunction. Meanwhile, the dc current gain is almost independent of the perimeter-to-area ratio of the emitter due to the low surface recombination.
|Number of pages||4|
|Journal||Conference Proceedings-International Conference on Indium Phosphide and Related Materials|
|Publication status||Published - 2002 Jan 1|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering