InP/InGaAs double heterojunction bipolar transistor (DHBT) with an emitter tunneling barrier and composite collector structure

W. H. Chiou, C. Y. Chen, C. K. Wang, H. M. Chuang, X. D. Liao, K. M. Lee, S. F. Tsai, C. T. Lu, Wen-Chau Liu

Research output: Contribution to journalArticlepeer-review

Abstract

The dc performances of a novel InP/InGaAs double-heterojunction bipolar transistor (DHBT) with the undoped tunneling barrier and composite collector structure are studied and demonstrated. Due to the mass filtering effect for holes, a thin InP tunneling barrier can be used to replace the wide-gap emitter. Experimentally, an extremely small offset voltage of 25 mV and breakdown voltage BVCEO of 9.2 V are obtained. Furthermore, the abrupt junction and δ-doping structure can eliminate carrier blocking effect effectively when electrons transporting across the base-collector heterojunction. Meanwhile, the dc current gain is almost independent of the perimeter-to-area ratio of the emitter due to the low surface recombination.

Original languageEnglish
Pages (from-to)277-280
Number of pages4
JournalConference Proceedings-International Conference on Indium Phosphide and Related Materials
DOIs
Publication statusPublished - 2002 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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