InP/InGaAs double heterojunction bipolar transistor (DHBT) with an emitter tunneling barrier and composite collector structure

W. H. Chiou; C. Y. Chen; C. K. Wang; H. M. Chuang; X. D. Liao; K. M. Lee; S. F. Tsai; C. T. Lu; W. C. Liu

doi:10.1109/ICIPRM.2002.1014365

InP/InGaAs double heterojunction bipolar transistor (DHBT) with an emitter tunneling barrier and composite collector structure

W. H. Chiou, C. Y. Chen, C. K. Wang, H. M. Chuang, X. D. Liao, K. M. Lee, S. F. Tsai, C. T. Lu, W. C. Liu

Research output: Contribution to journal › Article › peer-review

Abstract

The dc performances of a novel InP/InGaAs double-heterojunction bipolar transistor (DHBT) with the undoped tunneling barrier and composite collector structure are studied and demonstrated. Due to the mass filtering effect for holes, a thin InP tunneling barrier can be used to replace the wide-gap emitter. Experimentally, an extremely small offset voltage of 25 mV and breakdown voltage BV_CEO of 9.2 V are obtained. Furthermore, the abrupt junction and δ-doping structure can eliminate carrier blocking effect effectively when electrons transporting across the base-collector heterojunction. Meanwhile, the dc current gain is almost independent of the perimeter-to-area ratio of the emitter due to the low surface recombination.

Original language	English
Pages (from-to)	277-280
Number of pages	4
Journal	Conference Proceedings-International Conference on Indium Phosphide and Related Materials
DOIs	https://doi.org/10.1109/ICIPRM.2002.1014365
Publication status	Published - 2002

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ICIPRM.2002.1014365

Cite this

Chiou, W. H., Chen, C. Y., Wang, C. K., Chuang, H. M., Liao, X. D., Lee, K. M., Tsai, S. F., Lu, C. T., & Liu, W. C. (2002). InP/InGaAs double heterojunction bipolar transistor (DHBT) with an emitter tunneling barrier and composite collector structure. Conference Proceedings-International Conference on Indium Phosphide and Related Materials, 277-280. https://doi.org/10.1109/ICIPRM.2002.1014365

@article{25d2a4c43b3d433ab4eafbe687e7af46,

title = "InP/InGaAs double heterojunction bipolar transistor (DHBT) with an emitter tunneling barrier and composite collector structure",

abstract = "The dc performances of a novel InP/InGaAs double-heterojunction bipolar transistor (DHBT) with the undoped tunneling barrier and composite collector structure are studied and demonstrated. Due to the mass filtering effect for holes, a thin InP tunneling barrier can be used to replace the wide-gap emitter. Experimentally, an extremely small offset voltage of 25 mV and breakdown voltage BVCEO of 9.2 V are obtained. Furthermore, the abrupt junction and δ-doping structure can eliminate carrier blocking effect effectively when electrons transporting across the base-collector heterojunction. Meanwhile, the dc current gain is almost independent of the perimeter-to-area ratio of the emitter due to the low surface recombination.",

author = "Chiou, {W. H.} and Chen, {C. Y.} and Wang, {C. K.} and Chuang, {H. M.} and Liao, {X. D.} and Lee, {K. M.} and Tsai, {S. F.} and Lu, {C. T.} and Liu, {W. C.}",

year = "2002",

doi = "10.1109/ICIPRM.2002.1014365",

language = "English",

pages = "277--280",

journal = "Conference Proceedings-International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Chiou, WH, Chen, CY, Wang, CK, Chuang, HM, Liao, XD, Lee, KM, Tsai, SF, Lu, CT & Liu, WC 2002, 'InP/InGaAs double heterojunction bipolar transistor (DHBT) with an emitter tunneling barrier and composite collector structure', Conference Proceedings-International Conference on Indium Phosphide and Related Materials, pp. 277-280. https://doi.org/10.1109/ICIPRM.2002.1014365

TY - JOUR

T1 - InP/InGaAs double heterojunction bipolar transistor (DHBT) with an emitter tunneling barrier and composite collector structure

AU - Chiou, W. H.

AU - Chen, C. Y.

AU - Wang, C. K.

AU - Chuang, H. M.

AU - Liao, X. D.

AU - Lee, K. M.

AU - Tsai, S. F.

AU - Lu, C. T.

AU - Liu, W. C.

PY - 2002

Y1 - 2002

N2 - The dc performances of a novel InP/InGaAs double-heterojunction bipolar transistor (DHBT) with the undoped tunneling barrier and composite collector structure are studied and demonstrated. Due to the mass filtering effect for holes, a thin InP tunneling barrier can be used to replace the wide-gap emitter. Experimentally, an extremely small offset voltage of 25 mV and breakdown voltage BVCEO of 9.2 V are obtained. Furthermore, the abrupt junction and δ-doping structure can eliminate carrier blocking effect effectively when electrons transporting across the base-collector heterojunction. Meanwhile, the dc current gain is almost independent of the perimeter-to-area ratio of the emitter due to the low surface recombination.

AB - The dc performances of a novel InP/InGaAs double-heterojunction bipolar transistor (DHBT) with the undoped tunneling barrier and composite collector structure are studied and demonstrated. Due to the mass filtering effect for holes, a thin InP tunneling barrier can be used to replace the wide-gap emitter. Experimentally, an extremely small offset voltage of 25 mV and breakdown voltage BVCEO of 9.2 V are obtained. Furthermore, the abrupt junction and δ-doping structure can eliminate carrier blocking effect effectively when electrons transporting across the base-collector heterojunction. Meanwhile, the dc current gain is almost independent of the perimeter-to-area ratio of the emitter due to the low surface recombination.

UR - http://www.scopus.com/inward/record.url?scp=0036053157&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036053157&partnerID=8YFLogxK

U2 - 10.1109/ICIPRM.2002.1014365

DO - 10.1109/ICIPRM.2002.1014365

M3 - Article

AN - SCOPUS:0036053157

SN - 1092-8669

SP - 277

EP - 280

JO - Conference Proceedings-International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings-International Conference on Indium Phosphide and Related Materials

ER -

InP/InGaAs double heterojunction bipolar transistor (DHBT) with an emitter tunneling barrier and composite collector structure

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this