@inproceedings{a841c3c1003e45daa0ad702e536563c3,
title = "Insights to the scaling impact on back-gate biasing for FD SOI MOSFETs",
abstract = "This work investigates the scaling impact on the feasibility of back-gate biasing for ultra-thin-body and BOX fully depleted SOI MOSFETs (UTBB FD SOI) at 5nm technology node. Though the effectiveness of the threshold voltage (Vt) modulation by back bias is limited due to bulk inversion as a result of silicon film scaling, such an issue of reduced Vt window can be relieved by decreasing BOX thickness as the back-gate coupling could be enhanced by thin-BOX-reduced inversion charge centroid in scaled SOI film.",
author = "Chang, {Ming Yu} and Wang, {Li Jing} and Meng-Hsueh Chiang",
year = "2019",
month = feb,
day = "11",
doi = "10.1109/S3S.2018.8640185",
language = "English",
series = "2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018",
address = "United States",
note = "2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018 ; Conference date: 15-10-2018 Through 18-10-2018",
}