In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer

L. W. Wu; S. J. Chang; Y. K. Su; R. W. Chuang; Y. P. Hsu; C. H. Kuo; W. C. Lai; T. C. Wen; J. M. Tsai; J. K. Sheu

doi:10.1016/S0038-1101(03)00247-8

In_0.23Ga_0.77N/GaN MQW LEDs with a low temperature GaN cap layer

L. W. Wu, S. J. Chang, Y. K. Su, R. W. Chuang, Y. P. Hsu, C. H. Kuo, W. C. Lai, T. C. Wen, J. M. Tsai, J. K. Sheu

Research output: Contribution to journal › Article › peer-review

61 Citations (Scopus)

Abstract

Mg-doped p-GaN epitaxial layers prepared at different temperatures were prepared and characterized. It was found that we could achieve a higher hole concentration and a rough surface by reducing the growth temperature down to 800 °C. In_0.23Ga_0.77N/GaN multiquantum well (MQW) light emitting diodes (LEDs) with such a low 800 °C-grown p-GaN cap layer were also fabricated. It was found that we could enhance the LED output intensity by more than 90% with the low 800 °C-grown p-GaN cap layer, as compared to the conventional high 1000 °C-grown p-GaN cap layer.

Original language	English
Pages (from-to)	2027-2030
Number of pages	4
Journal	Solid-State Electronics
Volume	47
Issue number	11
DOIs	https://doi.org/10.1016/S0038-1101(03)00247-8
Publication status	Published - 2003 Nov

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/S0038-1101(03)00247-8

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@article{e8519dd507ed4b72a45cecf816ec2c4b,

title = "In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer",

abstract = "Mg-doped p-GaN epitaxial layers prepared at different temperatures were prepared and characterized. It was found that we could achieve a higher hole concentration and a rough surface by reducing the growth temperature down to 800 °C. In0.23Ga0.77N/GaN multiquantum well (MQW) light emitting diodes (LEDs) with such a low 800 °C-grown p-GaN cap layer were also fabricated. It was found that we could enhance the LED output intensity by more than 90% with the low 800 °C-grown p-GaN cap layer, as compared to the conventional high 1000 °C-grown p-GaN cap layer.",

author = "Wu, {L. W.} and Chang, {S. J.} and Su, {Y. K.} and Chuang, {R. W.} and Hsu, {Y. P.} and Kuo, {C. H.} and Lai, {W. C.} and Wen, {T. C.} and Tsai, {J. M.} and Sheu, {J. K.}",

note = "Funding Information: This work was supported by National Science Council under contract number NSC-89-2215-E-006-095.",

year = "2003",

month = nov,

doi = "10.1016/S0038-1101(03)00247-8",

language = "English",

volume = "47",

pages = "2027--2030",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "11",

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TY - JOUR

T1 - In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer

AU - Wu, L. W.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Chuang, R. W.

AU - Hsu, Y. P.

AU - Kuo, C. H.

AU - Lai, W. C.

AU - Wen, T. C.

AU - Tsai, J. M.

AU - Sheu, J. K.

N1 - Funding Information: This work was supported by National Science Council under contract number NSC-89-2215-E-006-095.

PY - 2003/11

Y1 - 2003/11

N2 - Mg-doped p-GaN epitaxial layers prepared at different temperatures were prepared and characterized. It was found that we could achieve a higher hole concentration and a rough surface by reducing the growth temperature down to 800 °C. In0.23Ga0.77N/GaN multiquantum well (MQW) light emitting diodes (LEDs) with such a low 800 °C-grown p-GaN cap layer were also fabricated. It was found that we could enhance the LED output intensity by more than 90% with the low 800 °C-grown p-GaN cap layer, as compared to the conventional high 1000 °C-grown p-GaN cap layer.

AB - Mg-doped p-GaN epitaxial layers prepared at different temperatures were prepared and characterized. It was found that we could achieve a higher hole concentration and a rough surface by reducing the growth temperature down to 800 °C. In0.23Ga0.77N/GaN multiquantum well (MQW) light emitting diodes (LEDs) with such a low 800 °C-grown p-GaN cap layer were also fabricated. It was found that we could enhance the LED output intensity by more than 90% with the low 800 °C-grown p-GaN cap layer, as compared to the conventional high 1000 °C-grown p-GaN cap layer.

UR - http://www.scopus.com/inward/record.url?scp=0042730096&partnerID=8YFLogxK

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U2 - 10.1016/S0038-1101(03)00247-8

DO - 10.1016/S0038-1101(03)00247-8

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SN - 0038-1101

VL - 47

SP - 2027

EP - 2030

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 11

ER -

In_0.23Ga_0.77N/GaN MQW LEDs with a low temperature GaN cap layer

Abstract

All Science Journal Classification (ASJC) codes

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