In0.34Al0.66As0.85Sb 0.15/δ(n+)-InP heterostructure field-effect transistors

Y. S. Lin, W. C. Hsu, C. Y. Yeh, H. M. Shieh

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

A lattice-matched δ-doped In0.34Al0.66As0.85Sb0.15/InP heterostructure field-effect transistor (HFET) which provides large band gap (≃ 1.8eV), high Schottky barrier height (φB>0.73eV), and large conduction-band discontinuity (ΔEe>0.7eV) has been proposed. In0.34Al0.66As0.85Sb0.15/InP heterostructures are shown to be type II heterojunctions with the staggered band lineup. This HFET demonstrates a output conductance of less than 1 mS/mm. Two-terminal gate-source breakdown voltage is more than 20 V with a leakage current as low as 170 μA at room temperature. High three-terminal off-state breakdown voltage as high as 36 V, and three-terminal on-state breakdown voltage as high as 18.6 V are achieved. The gate voltage swing is also significantly improved.

Original languageEnglish
Pages (from-to)3124-3126
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number21
DOIs
Publication statusPublished - 2000 May 22

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'In0.34Al0.66As0.85Sb 0.15/δ(n+)-InP heterostructure field-effect transistors'. Together they form a unique fingerprint.

Cite this