In0.37Ga0.63N metal-semiconductor-metal photodetectors with recessed electrodes

C. L. Yu, C. H. Chen, S. J. Chang, Y. K. Su, S. C. Chen, P. C. Chang, P. C. Chen, M. H. Wu, H. C. Chen, K. C. Su

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

InGaN metal-semiconductor-metal photodetectors (MSM-PDs) with recessed electrodes were fabricated. Compared with the conventional planar MSM-PD, it was found that measured photocurrent and photocurrent-to-dark-current contrast ratio were both much larger for the MSM-PD with the recessed electrodes. With a 5-V applied bias and an incident light wavelength of 470 nm, it was found that measured responsivities were 0.144 and 0.038 A/W for the MSM-PDs with and without the recessed electrodes, respectively.

Original languageEnglish
Pages (from-to)875-877
Number of pages3
JournalIEEE Photonics Technology Letters
Volume17
Issue number4
DOIs
Publication statusPublished - 2005 Apr

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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