Abstract
InGaN metal-semiconductor-metal photodetectors (MSM-PDs) with recessed electrodes were fabricated. Compared with the conventional planar MSM-PD, it was found that measured photocurrent and photocurrent-to-dark-current contrast ratio were both much larger for the MSM-PD with the recessed electrodes. With a 5-V applied bias and an incident light wavelength of 470 nm, it was found that measured responsivities were 0.144 and 0.038 A/W for the MSM-PDs with and without the recessed electrodes, respectively.
Original language | English |
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Pages (from-to) | 875-877 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 17 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2005 Apr |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering