In0.37Ga0.63N metal-semiconductor-metal photodetectors with recessed electrodes

C. L. Yu; C. H. Chen; S. J. Chang; Y. K. Su; S. C. Chen; P. C. Chang; P. C. Chen; M. H. Wu; H. C. Chen; K. C. Su

doi:10.1109/LPT.2004.843251

In_0.37Ga_0.63N metal-semiconductor-metal photodetectors with recessed electrodes

C. L. Yu
, C. H. Chen
, S. J. Chang
, Y. K. Su
, S. C. Chen
, P. C. Chang
, P. C. Chen
, M. H. Wu
, H. C. Chen
, K. C. Su

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

InGaN metal-semiconductor-metal photodetectors (MSM-PDs) with recessed electrodes were fabricated. Compared with the conventional planar MSM-PD, it was found that measured photocurrent and photocurrent-to-dark-current contrast ratio were both much larger for the MSM-PD with the recessed electrodes. With a 5-V applied bias and an incident light wavelength of 470 nm, it was found that measured responsivities were 0.144 and 0.038 A/W for the MSM-PDs with and without the recessed electrodes, respectively.

Original language	English
Pages (from-to)	875-877
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	17
Issue number	4
DOIs	https://doi.org/10.1109/LPT.2004.843251
Publication status	Published - 2005 Apr

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2004.843251

Cite this

@article{4c5808e0c5d242b18a289797c1fcae79,

title = "In0.37Ga0.63N metal-semiconductor-metal photodetectors with recessed electrodes",

abstract = "InGaN metal-semiconductor-metal photodetectors (MSM-PDs) with recessed electrodes were fabricated. Compared with the conventional planar MSM-PD, it was found that measured photocurrent and photocurrent-to-dark-current contrast ratio were both much larger for the MSM-PD with the recessed electrodes. With a 5-V applied bias and an incident light wavelength of 470 nm, it was found that measured responsivities were 0.144 and 0.038 A/W for the MSM-PDs with and without the recessed electrodes, respectively.",

author = "Yu, \{C. L.\} and Chen, \{C. H.\} and Chang, \{S. J.\} and Su, \{Y. K.\} and Chen, \{S. C.\} and Chang, \{P. C.\} and Chen, \{P. C.\} and Wu, \{M. H.\} and Chen, \{H. C.\} and Su, \{K. C.\}",

note = "Funding Information: Manuscript received October 12, 2004; revised December 1, 2004. This work was supported by National Science Council under Contract NSC91-2215-E006-012.",

year = "2005",

month = apr,

doi = "10.1109/LPT.2004.843251",

language = "English",

volume = "17",

pages = "875--877",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - In0.37Ga0.63N metal-semiconductor-metal photodetectors with recessed electrodes

AU - Yu, C. L.

AU - Chen, C. H.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Chen, S. C.

AU - Chang, P. C.

AU - Chen, P. C.

AU - Wu, M. H.

AU - Chen, H. C.

AU - Su, K. C.

N1 - Funding Information: Manuscript received October 12, 2004; revised December 1, 2004. This work was supported by National Science Council under Contract NSC91-2215-E006-012.

PY - 2005/4

Y1 - 2005/4

N2 - InGaN metal-semiconductor-metal photodetectors (MSM-PDs) with recessed electrodes were fabricated. Compared with the conventional planar MSM-PD, it was found that measured photocurrent and photocurrent-to-dark-current contrast ratio were both much larger for the MSM-PD with the recessed electrodes. With a 5-V applied bias and an incident light wavelength of 470 nm, it was found that measured responsivities were 0.144 and 0.038 A/W for the MSM-PDs with and without the recessed electrodes, respectively.

AB - InGaN metal-semiconductor-metal photodetectors (MSM-PDs) with recessed electrodes were fabricated. Compared with the conventional planar MSM-PD, it was found that measured photocurrent and photocurrent-to-dark-current contrast ratio were both much larger for the MSM-PD with the recessed electrodes. With a 5-V applied bias and an incident light wavelength of 470 nm, it was found that measured responsivities were 0.144 and 0.038 A/W for the MSM-PDs with and without the recessed electrodes, respectively.

UR - https://www.scopus.com/pages/publications/20244371333

UR - https://www.scopus.com/pages/publications/20244371333#tab=citedBy

U2 - 10.1109/LPT.2004.843251

DO - 10.1109/LPT.2004.843251

M3 - Article

AN - SCOPUS:20244371333

SN - 1041-1135

VL - 17

SP - 875

EP - 877

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 4

ER -

In_0.37Ga_0.63N metal-semiconductor-metal photodetectors with recessed electrodes

Abstract

All Science Journal Classification (ASJC) codes

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