In0.425Al0.575As/In0.65Ga 0.35As metamorphic HEMT on GaAs

Yeong Jia Chen; Zhou Bin Wang; Ke Hua Su; Wei Chou Hsu

In_0.425Al_0.575As/In_0.65Ga _0.35As metamorphic HEMT on GaAs

Yeong Jia Chen, Zhou Bin Wang, Ke Hua Su, Wei Chou Hsu

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A δ-doped In_0.45Al_0.55As/InGaAs metamorphic high electron mobility transistor (MHEMT) has been fabricated successfully and demonstrated. The In_0.425Al_0.575As Schottky layer provides good breakdown voltage due to larger energy-gap than that of In _0.52Al_0.48As. Experimentally, a high extrinsic transconductance of 277 mS/mm with V_DS = 2 V and a high drain-source saturation current density of 484 mA/mm with V_GS=0 V are obtained for a 0.65×200 μm² device at 300 K. Due to good carrier confinement in the channel layer, good pinch-off characteristic can be achieved. The measured f_T and f_max for a 0.65 μm gate device are 60.5 and 108.5 GHz at V_DS = 2 V and V_GS = -1.5V. The NF_min is 0.93 dB at 2.4 GHz, and the associated gain is 23.1 dB.

Original language	English
Title of host publication	IVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings
Pages	372-374
Number of pages	3
Publication status	Published - 2004
Event	IVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings - Beijing, China Duration: 2004 Sept 6 → 2004 Sept 10

Publication series

Name	IVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings

Other

Other	IVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings
Country/Territory	China
City	Beijing
Period	04-09-06 → 04-09-10

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@inproceedings{adeacdf16a8d4dde868176490e3fe525,

title = "In0.425Al0.575As/In0.65Ga 0.35As metamorphic HEMT on GaAs",

abstract = "A δ-doped In0.45Al0.55As/InGaAs metamorphic high electron mobility transistor (MHEMT) has been fabricated successfully and demonstrated. The In0.425Al0.575As Schottky layer provides good breakdown voltage due to larger energy-gap than that of In 0.52Al0.48As. Experimentally, a high extrinsic transconductance of 277 mS/mm with VDS = 2 V and a high drain-source saturation current density of 484 mA/mm with VGS=0 V are obtained for a 0.65×200 μm2 device at 300 K. Due to good carrier confinement in the channel layer, good pinch-off characteristic can be achieved. The measured fT and fmax for a 0.65 μm gate device are 60.5 and 108.5 GHz at VDS = 2 V and VGS = -1.5V. The NFmin is 0.93 dB at 2.4 GHz, and the associated gain is 23.1 dB.",

author = "Chen, {Yeong Jia} and Wang, {Zhou Bin} and Su, {Ke Hua} and Hsu, {Wei Chou}",

year = "2004",

language = "English",

isbn = "0780384377",

series = "IVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings",

pages = "372--374",

booktitle = "IVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings",

note = "IVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings ; Conference date: 06-09-2004 Through 10-09-2004",

}

Chen, YJ, Wang, ZB, Su, KH & Hsu, WC 2004, In_0.425Al_0.575As/In_0.65Ga _0.35As metamorphic HEMT on GaAs. in IVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings. IVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings, pp. 372-374, IVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings, Beijing, China, 04-09-06.

In_0.425Al_0.575As/In_0.65Ga _0.35As metamorphic HEMT on GaAs. / Chen, Yeong Jia; Wang, Zhou Bin; Su, Ke Hua et al.
IVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings. 2004. p. 372-374 (IVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - In0.425Al0.575As/In0.65Ga 0.35As metamorphic HEMT on GaAs

AU - Chen, Yeong Jia

AU - Wang, Zhou Bin

AU - Su, Ke Hua

AU - Hsu, Wei Chou

PY - 2004

Y1 - 2004

N2 - A δ-doped In0.45Al0.55As/InGaAs metamorphic high electron mobility transistor (MHEMT) has been fabricated successfully and demonstrated. The In0.425Al0.575As Schottky layer provides good breakdown voltage due to larger energy-gap than that of In 0.52Al0.48As. Experimentally, a high extrinsic transconductance of 277 mS/mm with VDS = 2 V and a high drain-source saturation current density of 484 mA/mm with VGS=0 V are obtained for a 0.65×200 μm2 device at 300 K. Due to good carrier confinement in the channel layer, good pinch-off characteristic can be achieved. The measured fT and fmax for a 0.65 μm gate device are 60.5 and 108.5 GHz at VDS = 2 V and VGS = -1.5V. The NFmin is 0.93 dB at 2.4 GHz, and the associated gain is 23.1 dB.

AB - A δ-doped In0.45Al0.55As/InGaAs metamorphic high electron mobility transistor (MHEMT) has been fabricated successfully and demonstrated. The In0.425Al0.575As Schottky layer provides good breakdown voltage due to larger energy-gap than that of In 0.52Al0.48As. Experimentally, a high extrinsic transconductance of 277 mS/mm with VDS = 2 V and a high drain-source saturation current density of 484 mA/mm with VGS=0 V are obtained for a 0.65×200 μm2 device at 300 K. Due to good carrier confinement in the channel layer, good pinch-off characteristic can be achieved. The measured fT and fmax for a 0.65 μm gate device are 60.5 and 108.5 GHz at VDS = 2 V and VGS = -1.5V. The NFmin is 0.93 dB at 2.4 GHz, and the associated gain is 23.1 dB.

UR - http://www.scopus.com/inward/record.url?scp=20444391385&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20444391385&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:20444391385

SN - 0780384377

T3 - IVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings

SP - 372

EP - 374

BT - IVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings

T2 - IVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings

Y2 - 6 September 2004 through 10 September 2004

ER -