In0.425Al0.575As/In0.65Ga 0.35As metamorphic HEMT on GaAs

Yeong Jia Chen, Zhou Bin Wang, Ke Hua Su, Wei Chou Hsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A δ-doped In0.45Al0.55As/InGaAs metamorphic high electron mobility transistor (MHEMT) has been fabricated successfully and demonstrated. The In0.425Al0.575As Schottky layer provides good breakdown voltage due to larger energy-gap than that of In 0.52Al0.48As. Experimentally, a high extrinsic transconductance of 277 mS/mm with VDS = 2 V and a high drain-source saturation current density of 484 mA/mm with VGS=0 V are obtained for a 0.65×200 μm2 device at 300 K. Due to good carrier confinement in the channel layer, good pinch-off characteristic can be achieved. The measured fT and fmax for a 0.65 μm gate device are 60.5 and 108.5 GHz at VDS = 2 V and VGS = -1.5V. The NFmin is 0.93 dB at 2.4 GHz, and the associated gain is 23.1 dB.

Original languageEnglish
Title of host publicationIVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings
Pages372-374
Number of pages3
Publication statusPublished - 2004 Dec 1
EventIVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings - Beijing, China
Duration: 2004 Sep 62004 Sep 10

Publication series

NameIVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings

Other

OtherIVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings
CountryChina
CityBeijing
Period04-09-0604-09-10

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Chen, Y. J., Wang, Z. B., Su, K. H., & Hsu, W. C. (2004). In0.425Al0.575As/In0.65Ga 0.35As metamorphic HEMT on GaAs. In IVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings (pp. 372-374). (IVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings).