In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with δ-doped continuous-conduction-band (CCB) structure

Hsi Jen Pan, Shiou Ying Cheng, Wen Lung Chang, Shun Ching Feng, Kuo Hui Yu, Wen-Chau Liu

Research output: Contribution to journalArticle

Abstract

A new In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with a δ-doped continuous-conduction-band (CCB) structure has been fabricated successfully and studied. The use of the δ-doped CCB structure can effectively eliminate the potential spike in the E-B heterojunction. An offset voltage as low as 50mV and a relatively high current gain of 80 have been obtained experimentally. The studied device is therefore promising for practical circuit applications.

Original languageEnglish
Pages (from-to)428-429
Number of pages2
JournalElectronics Letters
Volume35
Issue number5
DOIs
Publication statusPublished - 1999 Mar 4

Fingerprint

Heterojunction bipolar transistors
Conduction bands
Band structure
Heterojunctions
Networks (circuits)
Electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Pan, Hsi Jen ; Cheng, Shiou Ying ; Chang, Wen Lung ; Feng, Shun Ching ; Yu, Kuo Hui ; Liu, Wen-Chau. / In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with δ-doped continuous-conduction-band (CCB) structure. In: Electronics Letters. 1999 ; Vol. 35, No. 5. pp. 428-429.
@article{b9be11dc2b4b44f292e29fd59dcf0385,
title = "In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with δ-doped continuous-conduction-band (CCB) structure",
abstract = "A new In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with a δ-doped continuous-conduction-band (CCB) structure has been fabricated successfully and studied. The use of the δ-doped CCB structure can effectively eliminate the potential spike in the E-B heterojunction. An offset voltage as low as 50mV and a relatively high current gain of 80 have been obtained experimentally. The studied device is therefore promising for practical circuit applications.",
author = "Pan, {Hsi Jen} and Cheng, {Shiou Ying} and Chang, {Wen Lung} and Feng, {Shun Ching} and Yu, {Kuo Hui} and Wen-Chau Liu",
year = "1999",
month = "3",
day = "4",
doi = "10.1049/el:19990220",
language = "English",
volume = "35",
pages = "428--429",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "5",

}

In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with δ-doped continuous-conduction-band (CCB) structure. / Pan, Hsi Jen; Cheng, Shiou Ying; Chang, Wen Lung; Feng, Shun Ching; Yu, Kuo Hui; Liu, Wen-Chau.

In: Electronics Letters, Vol. 35, No. 5, 04.03.1999, p. 428-429.

Research output: Contribution to journalArticle

TY - JOUR

T1 - In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with δ-doped continuous-conduction-band (CCB) structure

AU - Pan, Hsi Jen

AU - Cheng, Shiou Ying

AU - Chang, Wen Lung

AU - Feng, Shun Ching

AU - Yu, Kuo Hui

AU - Liu, Wen-Chau

PY - 1999/3/4

Y1 - 1999/3/4

N2 - A new In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with a δ-doped continuous-conduction-band (CCB) structure has been fabricated successfully and studied. The use of the δ-doped CCB structure can effectively eliminate the potential spike in the E-B heterojunction. An offset voltage as low as 50mV and a relatively high current gain of 80 have been obtained experimentally. The studied device is therefore promising for practical circuit applications.

AB - A new In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with a δ-doped continuous-conduction-band (CCB) structure has been fabricated successfully and studied. The use of the δ-doped CCB structure can effectively eliminate the potential spike in the E-B heterojunction. An offset voltage as low as 50mV and a relatively high current gain of 80 have been obtained experimentally. The studied device is therefore promising for practical circuit applications.

UR - http://www.scopus.com/inward/record.url?scp=0032662796&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032662796&partnerID=8YFLogxK

U2 - 10.1049/el:19990220

DO - 10.1049/el:19990220

M3 - Article

VL - 35

SP - 428

EP - 429

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 5

ER -