In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with δ-doped continuous-conduction-band (CCB) structure

Hsi Jen Pan, Shiou Ying Cheng, Wen Lung Chang, Shun Ching Feng, Kuo Hui Yu, Wen-Chau Liu

Research output: Contribution to journalArticlepeer-review

Abstract

A new In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with a δ-doped continuous-conduction-band (CCB) structure has been fabricated successfully and studied. The use of the δ-doped CCB structure can effectively eliminate the potential spike in the E-B heterojunction. An offset voltage as low as 50mV and a relatively high current gain of 80 have been obtained experimentally. The studied device is therefore promising for practical circuit applications.

Original languageEnglish
Pages (from-to)428-429
Number of pages2
JournalElectronics Letters
Volume35
Issue number5
DOIs
Publication statusPublished - 1999 Mar 4

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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