A new In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with a δ-doped continuous-conduction-band (CCB) structure has been fabricated successfully and studied. The use of the δ-doped CCB structure can effectively eliminate the potential spike in the E-B heterojunction. An offset voltage as low as 50mV and a relatively high current gain of 80 have been obtained experimentally. The studied device is therefore promising for practical circuit applications.
|Number of pages||2|
|Publication status||Published - 1999 Mar 4|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering