In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with δ-doped continuous-conduction-band (CCB) structure

Hsi Jen Pan; Shiou Ying Cheng; Wen Lung Chang; Shun Ching Feng; Kuo Hui Yu; Wen-Chau Liu

doi:10.1049/el:19990220

In_0.53Al_0.22Ga_0.25As/InP heterojunction bipolar transistor with δ-doped continuous-conduction-band (CCB) structure

Hsi Jen Pan
, Shiou Ying Cheng
, Wen Lung Chang
, Shun Ching Feng
, Kuo Hui Yu
, Wen-Chau Liu

Research output: Contribution to journal › Article › peer-review

Abstract

A new In_0.53Al_0.22Ga_0.25As/InP heterojunction bipolar transistor with a δ-doped continuous-conduction-band (CCB) structure has been fabricated successfully and studied. The use of the δ-doped CCB structure can effectively eliminate the potential spike in the E-B heterojunction. An offset voltage as low as 50mV and a relatively high current gain of 80 have been obtained experimentally. The studied device is therefore promising for practical circuit applications.

Original language	English
Pages (from-to)	428-429
Number of pages	2
Journal	Electronics Letters
Volume	35
Issue number	5
DOIs	https://doi.org/10.1049/el:19990220
Publication status	Published - 1999 Mar 4

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19990220

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title = "In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with δ-doped continuous-conduction-band (CCB) structure",

abstract = "A new In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with a δ-doped continuous-conduction-band (CCB) structure has been fabricated successfully and studied. The use of the δ-doped CCB structure can effectively eliminate the potential spike in the E-B heterojunction. An offset voltage as low as 50mV and a relatively high current gain of 80 have been obtained experimentally. The studied device is therefore promising for practical circuit applications.",

author = "Pan, \{Hsi Jen\} and Cheng, \{Shiou Ying\} and Chang, \{Wen Lung\} and Feng, \{Shun Ching\} and Yu, \{Kuo Hui\} and Wen-Chau Liu",

year = "1999",

month = mar,

day = "4",

doi = "10.1049/el:19990220",

language = "English",

volume = "35",

pages = "428--429",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

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TY - JOUR

T1 - In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with δ-doped continuous-conduction-band (CCB) structure

AU - Pan, Hsi Jen

AU - Cheng, Shiou Ying

AU - Chang, Wen Lung

AU - Feng, Shun Ching

AU - Yu, Kuo Hui

AU - Liu, Wen-Chau

PY - 1999/3/4

Y1 - 1999/3/4

N2 - A new In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with a δ-doped continuous-conduction-band (CCB) structure has been fabricated successfully and studied. The use of the δ-doped CCB structure can effectively eliminate the potential spike in the E-B heterojunction. An offset voltage as low as 50mV and a relatively high current gain of 80 have been obtained experimentally. The studied device is therefore promising for practical circuit applications.

AB - A new In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with a δ-doped continuous-conduction-band (CCB) structure has been fabricated successfully and studied. The use of the δ-doped CCB structure can effectively eliminate the potential spike in the E-B heterojunction. An offset voltage as low as 50mV and a relatively high current gain of 80 have been obtained experimentally. The studied device is therefore promising for practical circuit applications.

UR - https://www.scopus.com/pages/publications/0032662796

UR - https://www.scopus.com/pages/publications/0032662796#tab=citedBy

U2 - 10.1049/el:19990220

DO - 10.1049/el:19990220

M3 - Article

AN - SCOPUS:0032662796

SN - 0013-5194

VL - 35

SP - 428

EP - 429

JO - Electronics Letters

JF - Electronics Letters

IS - 5

ER -

In_0.53Al_0.22Ga_0.25As/InP heterojunction bipolar transistor with δ-doped continuous-conduction-band (CCB) structure

Abstract

All Science Journal Classification (ASJC) codes

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