In0.5Ga0.5As-based metal-oxide-semiconductor capacitor on GaAs substrate using metal-organic chemical vapor deposition

H. Q. Nguyen; H. D. Trinh; E. Y. Chang; C. T. Lee; Shin Yuan Wang; H. W. Yu; C. H. Hsu; C. L. Nguyen

doi:10.1109/TED.2012.2228201

In_0.5Ga_0.5As-based metal-oxide-semiconductor capacitor on GaAs substrate using metal-organic chemical vapor deposition

H. Q. Nguyen, H. D. Trinh, E. Y. Chang, C. T. Lee, Shin Yuan Wang, H. W. Yu, C. H. Hsu, C. L. Nguyen

Department of Photonics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We demonstrate the good-performance In_0.5Ga_0.5 As-based metal-oxide-semiconductor capacitor (MOSCAP) on GaAs substrate using metal-organic chemical vapor deposition technique. In_0.5Ga _0.5As film grown on GaAs substrate is proved to be high quality with threading dislocation density as low as 10⁶cm^-2. The performance of the MOSCAPs is comparable to that of In_0.53 Ga _0.47 As/InP-based devices grown by molecular beam epitaxy technique. The devices show a nice capacitance-voltage response, with small frequency dispersion. The parallel conductance contours show the free movement of Fermi level with the gate bias. Acceptable interface trap density D_it values of 5 × 10¹¹-2×10¹² eV-1̇cm ^-2 in the energy range of 0.64-0.52 eV above the InGaAs valence band maximum in In_0.5Ga_0.5As/GaAs MOSCAPs obtained by conductance methods were shown.

Original language	English
Article number	6376156
Pages (from-to)	235-240
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	60
Issue number	1
DOIs	https://doi.org/10.1109/TED.2012.2228201
Publication status	Published - 2013 Jan 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2012.2228201

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title = "In0.5Ga0.5As-based metal-oxide-semiconductor capacitor on GaAs substrate using metal-organic chemical vapor deposition",

abstract = "We demonstrate the good-performance In0.5Ga0.5 As-based metal-oxide-semiconductor capacitor (MOSCAP) on GaAs substrate using metal-organic chemical vapor deposition technique. In0.5Ga 0.5As film grown on GaAs substrate is proved to be high quality with threading dislocation density as low as 106cm-2. The performance of the MOSCAPs is comparable to that of In0.53 Ga 0.47 As/InP-based devices grown by molecular beam epitaxy technique. The devices show a nice capacitance-voltage response, with small frequency dispersion. The parallel conductance contours show the free movement of Fermi level with the gate bias. Acceptable interface trap density Dit values of 5 × 1011-2×1012 eV-{\.1}cm -2 in the energy range of 0.64-0.52 eV above the InGaAs valence band maximum in In0.5Ga0.5As/GaAs MOSCAPs obtained by conductance methods were shown.",

author = "Nguyen, {H. Q.} and Trinh, {H. D.} and Chang, {E. Y.} and Lee, {C. T.} and Wang, {Shin Yuan} and Yu, {H. W.} and Hsu, {C. H.} and Nguyen, {C. L.}",

year = "2013",

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doi = "10.1109/TED.2012.2228201",

language = "English",

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journal = "IEEE Transactions on Electron Devices",

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T1 - In0.5Ga0.5As-based metal-oxide-semiconductor capacitor on GaAs substrate using metal-organic chemical vapor deposition

AU - Nguyen, H. Q.

AU - Trinh, H. D.

AU - Chang, E. Y.

AU - Lee, C. T.

AU - Wang, Shin Yuan

AU - Yu, H. W.

AU - Hsu, C. H.

AU - Nguyen, C. L.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - We demonstrate the good-performance In0.5Ga0.5 As-based metal-oxide-semiconductor capacitor (MOSCAP) on GaAs substrate using metal-organic chemical vapor deposition technique. In0.5Ga 0.5As film grown on GaAs substrate is proved to be high quality with threading dislocation density as low as 106cm-2. The performance of the MOSCAPs is comparable to that of In0.53 Ga 0.47 As/InP-based devices grown by molecular beam epitaxy technique. The devices show a nice capacitance-voltage response, with small frequency dispersion. The parallel conductance contours show the free movement of Fermi level with the gate bias. Acceptable interface trap density Dit values of 5 × 1011-2×1012 eV-1̇cm -2 in the energy range of 0.64-0.52 eV above the InGaAs valence band maximum in In0.5Ga0.5As/GaAs MOSCAPs obtained by conductance methods were shown.

AB - We demonstrate the good-performance In0.5Ga0.5 As-based metal-oxide-semiconductor capacitor (MOSCAP) on GaAs substrate using metal-organic chemical vapor deposition technique. In0.5Ga 0.5As film grown on GaAs substrate is proved to be high quality with threading dislocation density as low as 106cm-2. The performance of the MOSCAPs is comparable to that of In0.53 Ga 0.47 As/InP-based devices grown by molecular beam epitaxy technique. The devices show a nice capacitance-voltage response, with small frequency dispersion. The parallel conductance contours show the free movement of Fermi level with the gate bias. Acceptable interface trap density Dit values of 5 × 1011-2×1012 eV-1̇cm -2 in the energy range of 0.64-0.52 eV above the InGaAs valence band maximum in In0.5Ga0.5As/GaAs MOSCAPs obtained by conductance methods were shown.

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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ER -

In_0.5Ga_0.5As-based metal-oxide-semiconductor capacitor on GaAs substrate using metal-organic chemical vapor deposition

Abstract

All Science Journal Classification (ASJC) codes

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