Integrated SiO2/SiON/SiO2 thermo-optical switch based on the multimode interference effect

Ricky W. Chuang; Mao Teng Hsu; Zhen Liang Liao

doi:10.1143/JJAP.49.04DG21

Integrated SiO₂/SiON/SiO₂ thermo-optical switch based on the multimode interference effect

Ricky W. Chuang, Mao Teng Hsu, Zhen Liang Liao

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We propose the design of an integrated SiO₂/SiON/SiO₂ 2 × 2 multimode interference (MMI) based optical switch. The entire switching mechanism is based on the thermo-optic (TO) effect of SiO ₂/SiON dielectric layers. The heating power of ∼0.89Wis required to switch the optical beam from bar to cross state. The experimental crosstalk of the switch as determined betwen the cross and bar states is in the excess of 12 dB. Furthermore, the rise and fall times of approximately 314 ms are also experimentally realized for this device.

Original language	English
Article number	04DG21
Journal	Japanese journal of applied physics
Volume	49
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.49.04DG21
Publication status	Published - 2010 Apr

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.49.04DG21

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abstract = "We propose the design of an integrated SiO2/SiON/SiO2 2 × 2 multimode interference (MMI) based optical switch. The entire switching mechanism is based on the thermo-optic (TO) effect of SiO 2/SiON dielectric layers. The heating power of ∼0.89Wis required to switch the optical beam from bar to cross state. The experimental crosstalk of the switch as determined betwen the cross and bar states is in the excess of 12 dB. Furthermore, the rise and fall times of approximately 314 ms are also experimentally realized for this device.",

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AB - We propose the design of an integrated SiO2/SiON/SiO2 2 × 2 multimode interference (MMI) based optical switch. The entire switching mechanism is based on the thermo-optic (TO) effect of SiO 2/SiON dielectric layers. The heating power of ∼0.89Wis required to switch the optical beam from bar to cross state. The experimental crosstalk of the switch as determined betwen the cross and bar states is in the excess of 12 dB. Furthermore, the rise and fall times of approximately 314 ms are also experimentally realized for this device.

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Integrated SiO₂/SiON/SiO₂ thermo-optical switch based on the multimode interference effect

Abstract

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