Integration of a stack of two fluorine doped silicon oxide film with ULSI interconnect metallization

Y. L. Cheng, Y. L. Wang, Chuan-Pu Liu, Y. L. Wu, Kuang-Yao Lo, C. W. Liu, J. K. Lan, Chyung Ay, M. S. Feng

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Recently, fluorosilicate glass (FSG) has received much attention for application in microelectronics manufacturing due to its low dielectric constant and stable gap-filling ability. Although FSG films have been demonstrated as potential inter metal dielectrics (IMD) for sub-micron devices, integrating a stack of two fluorine doped silicon oxide film deposited on a high-density plasma chemical vapor deposition (HDP-CVD) system for gap filling and a plasma-enhanced chemical vapor deposition (PECVD) system for throughput has not been fully investigated. In this research, an excellent and exceptionally stable process was demonstrated for a stack of HDP-CVD FSG and PECVD FSG layers. Cracks that result from multi-level metal technology were eliminated when higher compressive stress PECVD FSG film was implemented as a capping layer. An 11% capacitance reduction was achieved when comparing a stack of FSG films to undoped silicon oxide. No problem occurred for photo, via etching and chemical mechanical polishing of FSG film. The FSG layer stack's via resistance (Rc_Via) as well as a full HDP-FSG scheme is comparable. These results are very promising for the integration of FSG films as inter metal dielectric for devices.

Original languageEnglish
Pages (from-to)150-157
Number of pages8
JournalMaterials Chemistry and Physics
Volume83
Issue number1
DOIs
Publication statusPublished - 2004 Jan 15

Fingerprint

fluorosilicates
Fluorine
Silicon oxides
Metallizing
silicon oxides
Oxide films
fluorine
oxide films
Glass
glass
vapor deposition
Plasma enhanced chemical vapor deposition
Plasma density
Metals
plasma density
Chemical vapor deposition
metals
Chemical mechanical polishing
Compressive stress
polishing

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Cheng, Y. L. ; Wang, Y. L. ; Liu, Chuan-Pu ; Wu, Y. L. ; Lo, Kuang-Yao ; Liu, C. W. ; Lan, J. K. ; Ay, Chyung ; Feng, M. S. / Integration of a stack of two fluorine doped silicon oxide film with ULSI interconnect metallization. In: Materials Chemistry and Physics. 2004 ; Vol. 83, No. 1. pp. 150-157.
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Integration of a stack of two fluorine doped silicon oxide film with ULSI interconnect metallization. / Cheng, Y. L.; Wang, Y. L.; Liu, Chuan-Pu; Wu, Y. L.; Lo, Kuang-Yao; Liu, C. W.; Lan, J. K.; Ay, Chyung; Feng, M. S.

In: Materials Chemistry and Physics, Vol. 83, No. 1, 15.01.2004, p. 150-157.

Research output: Contribution to journalArticle

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AU - Feng, M. S.

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