Integration of Gate Recessing and In Situ Cl- Doped Al2O3 for Enhancement-Mode AlGaN/GaN MOSHEMTs Fabrication

Han Yin Liu, Chih Wei Lin, Wei Chou Hsu, Ching Sung Lee, Meng Hsueh Chiang, Wen Ching Sun, Sung Yen Wei, Sheng Min Yu

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7 Citations (Scopus)


This letter demonstrates an integration process of in situ Cl- doped Al2O3 and gate recess technique to fabricate the enhancement mode AlGaN/GaN MOSHEMTs. The Cl- doped Al2O3 thin film is deposited by the ultrasonic spray pyrolysis deposition and characterized by transmission electron microscopy and X-ray photoelectron spectroscopy. The relative permittivity of Cl- doped Al2O3 is higher than the pure Al2O3 and the output current is enhanced. The threshold voltage of the enhancement mode AlGaN/GaN MOSHEMT with the Cl- doped Al2O3 gate dielectric layer rose from 0.2 to 1.3 V. Furthermore, the breakdown voltage of present enhancement mode AlGaN/GaN MOSHEMT reached 650 V. It was also found that the MOSHEMT with Cl- doped Al2O3 has higher gate leakage than that with pure Al2O3. The thermal stability of threshold voltage and current collapse phenomenon is described in this letter.

Original languageEnglish
Article number7736038
Pages (from-to)91-94
Number of pages4
JournalIEEE Electron Device Letters
Issue number1
Publication statusPublished - 2017 Jan

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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