Integration of n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs

J. H. Tsai, C. M. Li, Wen-Chau Liu, D. F. Guo, S. Y. Chiu, W. S. Lour

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs on the identical chip by selectively etching process are first demonstrated. Particularly, the saturation voltage of the n-channel device is relatively small because 2DEG is formed and modulated in the InGaAs strain channel. Experimentally, an extrinsic transconductance of 292 (72)mS/mm and a saturation current density of 335 (-270)mA/mm are obtained for the n-channel (p-channel) device. Furthermore, the integrated devices exhibit broad gate voltage swings for linear and signal amplifier applications.

Original languageEnglish
Pages (from-to)732-734
Number of pages3
JournalElectronics Letters
Volume43
Issue number13
DOIs
Publication statusPublished - 2007 Jun 27

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Integration of n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs'. Together they form a unique fingerprint.

Cite this