Integration of n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs

J. H. Tsai; C. M. Li; Wen-Chau Liu; D. F. Guo; S. Y. Chiu; W. S. Lour

doi:10.1049/el:20070621

Integration of n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs

J. H. Tsai, C. M. Li, Wen-Chau Liu, D. F. Guo, S. Y. Chiu, W. S. Lour

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs on the identical chip by selectively etching process are first demonstrated. Particularly, the saturation voltage of the n-channel device is relatively small because 2DEG is formed and modulated in the InGaAs strain channel. Experimentally, an extrinsic transconductance of 292 (72)mS/mm and a saturation current density of 335 (-270)mA/mm are obtained for the n-channel (p-channel) device. Furthermore, the integrated devices exhibit broad gate voltage swings for linear and signal amplifier applications.

Original language	English
Pages (from-to)	732-734
Number of pages	3
Journal	Electronics Letters
Volume	43
Issue number	13
DOIs	https://doi.org/10.1049/el:20070621
Publication status	Published - 2007 Jun 27

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20070621

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title = "Integration of n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs",

abstract = "n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs on the identical chip by selectively etching process are first demonstrated. Particularly, the saturation voltage of the n-channel device is relatively small because 2DEG is formed and modulated in the InGaAs strain channel. Experimentally, an extrinsic transconductance of 292 (72)mS/mm and a saturation current density of 335 (-270)mA/mm are obtained for the n-channel (p-channel) device. Furthermore, the integrated devices exhibit broad gate voltage swings for linear and signal amplifier applications.",

author = "Tsai, {J. H.} and Li, {C. M.} and Wen-Chau Liu and Guo, {D. F.} and Chiu, {S. Y.} and Lour, {W. S.}",

year = "2007",

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doi = "10.1049/el:20070621",

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T1 - Integration of n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs

AU - Tsai, J. H.

AU - Li, C. M.

AU - Liu, Wen-Chau

AU - Guo, D. F.

AU - Chiu, S. Y.

AU - Lour, W. S.

PY - 2007/6/27

Y1 - 2007/6/27

N2 - n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs on the identical chip by selectively etching process are first demonstrated. Particularly, the saturation voltage of the n-channel device is relatively small because 2DEG is formed and modulated in the InGaAs strain channel. Experimentally, an extrinsic transconductance of 292 (72)mS/mm and a saturation current density of 335 (-270)mA/mm are obtained for the n-channel (p-channel) device. Furthermore, the integrated devices exhibit broad gate voltage swings for linear and signal amplifier applications.

AB - n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs on the identical chip by selectively etching process are first demonstrated. Particularly, the saturation voltage of the n-channel device is relatively small because 2DEG is formed and modulated in the InGaAs strain channel. Experimentally, an extrinsic transconductance of 292 (72)mS/mm and a saturation current density of 335 (-270)mA/mm are obtained for the n-channel (p-channel) device. Furthermore, the integrated devices exhibit broad gate voltage swings for linear and signal amplifier applications.

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Integration of n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs

Abstract

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