Inter-sub-level spectroscopy of p-type modulation-doped Ge quantum dots

J. L. Liu, W. G. Wu, G. Jin, Y. H. Luo, S. G. Thomas, Y. Lu, K. L. Wang

Research output: Contribution to journalArticlepeer-review

Abstract

Inter-sub-level transitions in p-type modulation-doped Ge quantum dots are observed. The structure is grown by molecular beam epitaxy and consists of 30 periods of Ge quantum dots separated by 6 nm boron-doped Si layers. An absorption peak in the mid-infrared range is observed at room temperature by Fourier transform infrared spectroscopy, and is attributed to the transition between the first two heavy hole states of the Ge quantum dots. This study suggests the possible use of modulation-doped Ge quantum dots for improved infrared detector application.

Original languageEnglish
Pages (from-to)15-18
Number of pages4
JournalMaterials Research Society Symposium - Proceedings
Volume571
DOIs
Publication statusPublished - 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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