Interband resonant tunneling diode in δ-doped GaAs

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Abstract

Novel negative differential resistance (NDR) diodes, suggesting interband resonant tunneling diodes, in δ-doped GaAs prepared by molecular beam epitaxy are demonstrated. Two Si and one Be δ-doped planes were inserted in the GaAs layer, i.e., n+-δn+-i-δp +-i-δn+-n+, to form the required band structure. Electrons are then transported from the conduction band of the n + layer and resonantly tunnel through the valence band of the δp+ induced quantum well. Symmetric NDR characteristics with a peak-to-valley current ratio of 1.7 and a peak current density of 5 kA/cm 2 under forward and reverse biases operating at room temperature are observed.

Original languageEnglish
Pages (from-to)1546-1547
Number of pages2
JournalApplied Physics Letters
Volume57
Issue number15
DOIs
Publication statusPublished - 1990 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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