Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy

Z. C. Feng, V. Arbet-Engels, R. P.G. Karunasiri, K. L. Wang, F. Watt, K. K. Lee, A. T.S. Wee, H. H. Hng, K. P.J. Williams

Research output: Contribution to conferencePaperpeer-review

Abstract

Si1-xGex layers sandwiched between Si were grown at low temperature of 450°C by molecular beam epitaxy. A comprehensive characterization on these heterostructures by various techniques of x-ray diffraction, photoluminescence, Raman scattering, Fourier infrared spectroscopy, Rutherford backscattering spectrometry, ion channeling and secondary ion mass spectroscopy is presented.

Original languageEnglish
DOIs
Publication statusPublished - 1994
Event1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan
Duration: 1994 Jul 121994 Jul 15

Conference

Conference1994 International Electron Devices and Materials Symposium, EDMS 1994
CountryTaiwan
CityHsinchu
Period94-07-1294-07-15

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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