Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy

Z. C. Feng; V. Arbet-Engels; R. P.G. Karunasiri; K. L. Wang; F. Watt; K. K. Lee; A. T.S. Wee; H. H. Hng; K. P.J. Williams

doi:10.1109/EDMS.1994.771134

Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy

Z. C. Feng, V. Arbet-Engels, R. P.G. Karunasiri, K. L. Wang, F. Watt, K. K. Lee, A. T.S. Wee, H. H. Hng, K. P.J. Williams

College of Electrical Engineering and Computer Science

Research output: Contribution to conference › Paper › peer-review

Abstract

Si_1-xGe_x layers sandwiched between Si were grown at low temperature of 450°C by molecular beam epitaxy. A comprehensive characterization on these heterostructures by various techniques of x-ray diffraction, photoluminescence, Raman scattering, Fourier infrared spectroscopy, Rutherford backscattering spectrometry, ion channeling and secondary ion mass spectroscopy is presented.

Original language	English
DOIs	https://doi.org/10.1109/EDMS.1994.771134
Publication status	Published - 1994
Event	1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan Duration: 1994 Jul 12 → 1994 Jul 15

Conference

Conference	1994 International Electron Devices and Materials Symposium, EDMS 1994
Country/Territory	Taiwan
City	Hsinchu
Period	94-07-12 → 94-07-15

All Science Journal Classification (ASJC) codes

Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDMS.1994.771134

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Feng, Z. C., Arbet-Engels, V., Karunasiri, R. P. G., Wang, K. L., Watt, F., Lee, K. K., Wee, A. T. S., Hng, H. H., & Williams, K. P. J. (1994). Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy. Paper presented at 1994 International Electron Devices and Materials Symposium, EDMS 1994, Hsinchu, Taiwan. https://doi.org/10.1109/EDMS.1994.771134

@conference{17e61f0797e747718e0ee1a43efd68cd,

title = "Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy",

abstract = "Si1-xGex layers sandwiched between Si were grown at low temperature of 450°C by molecular beam epitaxy. A comprehensive characterization on these heterostructures by various techniques of x-ray diffraction, photoluminescence, Raman scattering, Fourier infrared spectroscopy, Rutherford backscattering spectrometry, ion channeling and secondary ion mass spectroscopy is presented.",

author = "Feng, {Z. C.} and V. Arbet-Engels and Karunasiri, {R. P.G.} and Wang, {K. L.} and F. Watt and Lee, {K. K.} and Wee, {A. T.S.} and Hng, {H. H.} and Williams, {K. P.J.}",

note = "Publisher Copyright: {\textcopyright} 1994 IEEE.; 1994 International Electron Devices and Materials Symposium, EDMS 1994 ; Conference date: 12-07-1994 Through 15-07-1994",

year = "1994",

doi = "10.1109/EDMS.1994.771134",

language = "English",

}

Feng, ZC, Arbet-Engels, V, Karunasiri, RPG, Wang, KL, Watt, F, Lee, KK, Wee, ATS, Hng, HH & Williams, KPJ 1994, 'Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy', Paper presented at 1994 International Electron Devices and Materials Symposium, EDMS 1994, Hsinchu, Taiwan, 94-07-12 - 94-07-15. https://doi.org/10.1109/EDMS.1994.771134

TY - CONF

T1 - Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy

AU - Feng, Z. C.

AU - Arbet-Engels, V.

AU - Karunasiri, R. P.G.

AU - Wang, K. L.

AU - Watt, F.

AU - Lee, K. K.

AU - Wee, A. T.S.

AU - Hng, H. H.

AU - Williams, K. P.J.

PY - 1994

Y1 - 1994

N2 - Si1-xGex layers sandwiched between Si were grown at low temperature of 450°C by molecular beam epitaxy. A comprehensive characterization on these heterostructures by various techniques of x-ray diffraction, photoluminescence, Raman scattering, Fourier infrared spectroscopy, Rutherford backscattering spectrometry, ion channeling and secondary ion mass spectroscopy is presented.

AB - Si1-xGex layers sandwiched between Si were grown at low temperature of 450°C by molecular beam epitaxy. A comprehensive characterization on these heterostructures by various techniques of x-ray diffraction, photoluminescence, Raman scattering, Fourier infrared spectroscopy, Rutherford backscattering spectrometry, ion channeling and secondary ion mass spectroscopy is presented.

UR - http://www.scopus.com/inward/record.url?scp=85063576933&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85063576933&partnerID=8YFLogxK

U2 - 10.1109/EDMS.1994.771134

DO - 10.1109/EDMS.1994.771134

M3 - Paper

AN - SCOPUS:85063576933

T2 - 1994 International Electron Devices and Materials Symposium, EDMS 1994

Y2 - 12 July 1994 through 15 July 1994

ER -

Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy

Abstract

Conference

All Science Journal Classification (ASJC) codes

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