Si1-xGex layers sandwiched between Si were grown at low temperature of 450°C by molecular beam epitaxy. A comprehensive characterization on these heterostructures by various techniques of X-ray diffraction, photoluminescence, Raman scattering, Fourier transform infrared spectroscopy, Rutherford backscattering spectrometry, ion channeling and secondary ion mass spectroscopy is presented.
|Number of pages||4|
|Journal||Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an|
|Publication status||Published - 1995 Feb|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering