Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy

Z. C. Feng; F. Watt; K. K. Lee; A. T.S. Wee; H. H. Hng; V. Arbet-Engels; R. P.G. Karunasiri; K. L. Wang; K. P.J. Williams

Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy

Z. C. Feng, F. Watt, K. K. Lee, A. T.S. Wee, H. H. Hng, V. Arbet-Engels, R. P.G. Karunasiri, K. L. Wang, K. P.J. Williams

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

Abstract

Si_1-xGe_x layers sandwiched between Si were grown at low temperature of 450°C by molecular beam epitaxy. A comprehensive characterization on these heterostructures by various techniques of X-ray diffraction, photoluminescence, Raman scattering, Fourier transform infrared spectroscopy, Rutherford backscattering spectrometry, ion channeling and secondary ion mass spectroscopy is presented.

Original language	English
Pages (from-to)	25-28
Number of pages	4
Journal	Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an
Volume	2
Issue number	1
Publication status	Published - 1995 Feb

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

Feng, Z. C., Watt, F., Lee, K. K., Wee, A. T. S., Hng, H. H., Arbet-Engels, V., Karunasiri, R. P. G., Wang, K. L., & Williams, K. P. J. (1995). Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy. Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an, 2(1), 25-28.

@article{5258e6da910d43a1b1b28d73166c0bda,

title = "Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy",

abstract = "Si1-xGex layers sandwiched between Si were grown at low temperature of 450°C by molecular beam epitaxy. A comprehensive characterization on these heterostructures by various techniques of X-ray diffraction, photoluminescence, Raman scattering, Fourier transform infrared spectroscopy, Rutherford backscattering spectrometry, ion channeling and secondary ion mass spectroscopy is presented.",

author = "Feng, {Z. C.} and F. Watt and Lee, {K. K.} and Wee, {A. T.S.} and Hng, {H. H.} and V. Arbet-Engels and Karunasiri, {R. P.G.} and Wang, {K. L.} and Williams, {K. P.J.}",

year = "1995",

month = feb,

language = "English",

volume = "2",

pages = "25--28",

journal = "International Journal of Electrical Engineering",

issn = "1812-3031",

publisher = "Chinese Institute of Electrical Engineering",

number = "1",

}

Feng, ZC, Watt, F, Lee, KK, Wee, ATS, Hng, HH, Arbet-Engels, V, Karunasiri, RPG, Wang, KL & Williams, KPJ 1995, 'Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy', Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an, vol. 2, no. 1, pp. 25-28.

Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy. / Feng, Z. C.; Watt, F.; Lee, K. K. et al.
In: Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an, Vol. 2, No. 1, 02.1995, p. 25-28.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy

AU - Feng, Z. C.

AU - Watt, F.

AU - Lee, K. K.

AU - Wee, A. T.S.

AU - Hng, H. H.

AU - Arbet-Engels, V.

AU - Karunasiri, R. P.G.

AU - Wang, K. L.

AU - Williams, K. P.J.

PY - 1995/2

Y1 - 1995/2

N2 - Si1-xGex layers sandwiched between Si were grown at low temperature of 450°C by molecular beam epitaxy. A comprehensive characterization on these heterostructures by various techniques of X-ray diffraction, photoluminescence, Raman scattering, Fourier transform infrared spectroscopy, Rutherford backscattering spectrometry, ion channeling and secondary ion mass spectroscopy is presented.

AB - Si1-xGex layers sandwiched between Si were grown at low temperature of 450°C by molecular beam epitaxy. A comprehensive characterization on these heterostructures by various techniques of X-ray diffraction, photoluminescence, Raman scattering, Fourier transform infrared spectroscopy, Rutherford backscattering spectrometry, ion channeling and secondary ion mass spectroscopy is presented.

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SN - 1812-3031

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JO - International Journal of Electrical Engineering

JF - International Journal of Electrical Engineering

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ER -

Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy

Abstract

All Science Journal Classification (ASJC) codes

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