Interdisciplinary characterization of sandwiched SiGe thin layers grown by molecular beam epitaxy

Z. C. Feng, F. Watt, K. K. Lee, A. T.S. Wee, H. H. Hng, V. Arbet-Engels, R. P.G. Karunasiri, K. L. Wang, K. P.J. Williams

Research output: Contribution to journalArticlepeer-review

Abstract

Si1-xGex layers sandwiched between Si were grown at low temperature of 450°C by molecular beam epitaxy. A comprehensive characterization on these heterostructures by various techniques of X-ray diffraction, photoluminescence, Raman scattering, Fourier transform infrared spectroscopy, Rutherford backscattering spectrometry, ion channeling and secondary ion mass spectroscopy is presented.

Original languageEnglish
Pages (from-to)25-28
Number of pages4
JournalJournal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an
Volume2
Issue number1
Publication statusPublished - 1995 Feb

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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