Interface characterization and indium content of indium-rich quantum dots in InGaN/GaN multiple quantum wells

Chuan Pu Liu, Yen Lin Lai, Zheng Quan Chen

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

We report on the interface characterization of InGaN/GaN multiple quantum wells with indium aggregation grown by metalorganic chemical vapor deposition. The interface related microstructure was analyzed by high-resolution transmission electron microscopy, high-resolution X-ray diffraction and high angle annular dark field. Luminescence measurements were carried out by micro-photoluminescence measurement. In addition, quantitative determination of the indium concentration inside the ultra-small dots was attempted. We demonstrate that the quantum dots are coherent and the interfaces remain sharp. The In content inside ∼2 nm InGaN dots is about 65% determined by spectrum imaging in energy-filtered transmission electron microscopy combined with multiple linear least squares fitting, which is slighter higher than the value obtained either from HRTEM or theoretical calculations. This discrepancy is briefly discussed but demands further studies for complete understanding.

Original languageEnglish
Pages (from-to)3922-3927
Number of pages6
JournalApplied Surface Science
Volume252
Issue number11
DOIs
Publication statusPublished - 2006 Mar 31

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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