Interface properties of thin oxides grown on strained GexSi 1-x layer

D. K. Nayak, J. S. Park, J. C.S. Woo, K. L. Wang, I. C. Ivanov

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19 Citations (Scopus)

Abstract

The electrical and chemical properties of the interfaces of thin oxides grown on strained GexSi1-x layers are analyzed in detail using capacitance-voltage measurements and Auger electron spectroscopy. It is found that the electrical properties (interface states and fixed oxide charges) of the interface depend on various parameters such as oxidation temperature, oxidation time, Ge distribution near the interface, and Ge distribution in the entire epilayer. The Ge distribution at the interface can be described using concentration-dependent diffusivity of Ge in the epilayer. The electrical properties are improved with the increase in oxidation temperature, but for a given oxidation temperature, the quality of the interface degrades with the increase in oxidation time. At a very high oxidation temperature the Ge distribution in the entire epilayer is altered due to the high diffusivity of Ge.

Original languageEnglish
Pages (from-to)982-986
Number of pages5
JournalJournal of Applied Physics
Volume76
Issue number2
DOIs
Publication statusPublished - 1994

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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