Interfacial characteristics of copper/diffusion barrier/low dielectric constant material systems at elevated temperatures

Jen-Sue Chen, J. S. Jeng, C. C. Chang

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

Thermal reactions of sputtered Cu films on the fluorinated silicate glass (FSG) and organosilicate glass (OSG) layers, with and without TiN or TaN diffusion barrier, were investigated. The sheet resistance, surface morphology, phase formation and compositional depth profile of the mutilayer structures after vacuum annealing at 400-800 °C were examined. It is found that the sheet resistance values of all samples decrease after annealing at 400-600 °C and increase after annealing at 700 or 800 °C. Without the barrier layer, the increase of sheet resistance is accompanied with the dewetting of Cu films. When a TiN/Ti or a TaN/Ta barrier layer is interposed between copper and the dielectric layer, the degree of Cu dewetting is significantly reduced for both systems.

Original languageEnglish
Pages266-267
Number of pages2
Publication statusPublished - 2001 Dec 1
EventProceedings of the Fourth International Conference on Materials Engineering for Resources - Akita, Japan
Duration: 2001 Oct 112001 Oct 13

Other

OtherProceedings of the Fourth International Conference on Materials Engineering for Resources
CountryJapan
CityAkita
Period01-10-1101-10-13

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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