Interfacial characteristics of copper/diffusion barrier/low dielectric constant material systems at elevated temperatures

Jen-Sue Chen; J. S. Jeng; C. C. Chang

Interfacial characteristics of copper/diffusion barrier/low dielectric constant material systems at elevated temperatures

Jen-Sue Chen, J. S. Jeng, C. C. Chang

Research output: Contribution to conference › Paper › peer-review

Abstract

Thermal reactions of sputtered Cu films on the fluorinated silicate glass (FSG) and organosilicate glass (OSG) layers, with and without TiN or TaN diffusion barrier, were investigated. The sheet resistance, surface morphology, phase formation and compositional depth profile of the mutilayer structures after vacuum annealing at 400-800 °C were examined. It is found that the sheet resistance values of all samples decrease after annealing at 400-600 °C and increase after annealing at 700 or 800 °C. Without the barrier layer, the increase of sheet resistance is accompanied with the dewetting of Cu films. When a TiN/Ti or a TaN/Ta barrier layer is interposed between copper and the dielectric layer, the degree of Cu dewetting is significantly reduced for both systems.

Original language	English
Pages	266-267
Number of pages	2
Publication status	Published - 2001 Dec 1
Event	Proceedings of the Fourth International Conference on Materials Engineering for Resources - Akita, Japan Duration: 2001 Oct 11 → 2001 Oct 13

Other

Other	Proceedings of the Fourth International Conference on Materials Engineering for Resources
Country/Territory	Japan
City	Akita
Period	01-10-11 → 01-10-13

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

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title = "Interfacial characteristics of copper/diffusion barrier/low dielectric constant material systems at elevated temperatures",

abstract = "Thermal reactions of sputtered Cu films on the fluorinated silicate glass (FSG) and organosilicate glass (OSG) layers, with and without TiN or TaN diffusion barrier, were investigated. The sheet resistance, surface morphology, phase formation and compositional depth profile of the mutilayer structures after vacuum annealing at 400-800 °C were examined. It is found that the sheet resistance values of all samples decrease after annealing at 400-600 °C and increase after annealing at 700 or 800 °C. Without the barrier layer, the increase of sheet resistance is accompanied with the dewetting of Cu films. When a TiN/Ti or a TaN/Ta barrier layer is interposed between copper and the dielectric layer, the degree of Cu dewetting is significantly reduced for both systems.",

author = "Jen-Sue Chen and Jeng, {J. S.} and Chang, {C. C.}",

year = "2001",

month = dec,

day = "1",

language = "English",

pages = "266--267",

note = "Proceedings of the Fourth International Conference on Materials Engineering for Resources ; Conference date: 11-10-2001 Through 13-10-2001",

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Interfacial characteristics of copper/diffusion barrier/low dielectric constant material systems at elevated temperatures. / Chen, Jen-Sue; Jeng, J. S.; Chang, C. C.
2001. 266-267 Paper presented at Proceedings of the Fourth International Conference on Materials Engineering for Resources, Akita, Japan.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Interfacial characteristics of copper/diffusion barrier/low dielectric constant material systems at elevated temperatures

AU - Chen, Jen-Sue

AU - Jeng, J. S.

AU - Chang, C. C.

PY - 2001/12/1

Y1 - 2001/12/1

N2 - Thermal reactions of sputtered Cu films on the fluorinated silicate glass (FSG) and organosilicate glass (OSG) layers, with and without TiN or TaN diffusion barrier, were investigated. The sheet resistance, surface morphology, phase formation and compositional depth profile of the mutilayer structures after vacuum annealing at 400-800 °C were examined. It is found that the sheet resistance values of all samples decrease after annealing at 400-600 °C and increase after annealing at 700 or 800 °C. Without the barrier layer, the increase of sheet resistance is accompanied with the dewetting of Cu films. When a TiN/Ti or a TaN/Ta barrier layer is interposed between copper and the dielectric layer, the degree of Cu dewetting is significantly reduced for both systems.

AB - Thermal reactions of sputtered Cu films on the fluorinated silicate glass (FSG) and organosilicate glass (OSG) layers, with and without TiN or TaN diffusion barrier, were investigated. The sheet resistance, surface morphology, phase formation and compositional depth profile of the mutilayer structures after vacuum annealing at 400-800 °C were examined. It is found that the sheet resistance values of all samples decrease after annealing at 400-600 °C and increase after annealing at 700 or 800 °C. Without the barrier layer, the increase of sheet resistance is accompanied with the dewetting of Cu films. When a TiN/Ti or a TaN/Ta barrier layer is interposed between copper and the dielectric layer, the degree of Cu dewetting is significantly reduced for both systems.

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M3 - Paper

AN - SCOPUS:0035790020

SP - 266

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T2 - Proceedings of the Fourth International Conference on Materials Engineering for Resources

Y2 - 11 October 2001 through 13 October 2001

ER -

Interfacial characteristics of copper/diffusion barrier/low dielectric constant material systems at elevated temperatures

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