Interfacial characteristics of copper/diffusion barrier/low dielectric constant material systems at elevated temperatures

Jen-Sue Chen, J. S. Jeng, C. C. Chang

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

Thermal reactions of sputtered Cu films on the fluorinated silicate glass (FSG) and organosilicate glass (OSG) layers, with and without TiN or TaN diffusion barrier, were investigated. The sheet resistance, surface morphology, phase formation and compositional depth profile of the mutilayer structures after vacuum annealing at 400-800 °C were examined. It is found that the sheet resistance values of all samples decrease after annealing at 400-600 °C and increase after annealing at 700 or 800 °C. Without the barrier layer, the increase of sheet resistance is accompanied with the dewetting of Cu films. When a TiN/Ti or a TaN/Ta barrier layer is interposed between copper and the dielectric layer, the degree of Cu dewetting is significantly reduced for both systems.

Original languageEnglish
Pages266-267
Number of pages2
Publication statusPublished - 2001 Dec 1
EventProceedings of the Fourth International Conference on Materials Engineering for Resources - Akita, Japan
Duration: 2001 Oct 112001 Oct 13

Other

OtherProceedings of the Fourth International Conference on Materials Engineering for Resources
CountryJapan
CityAkita
Period01-10-1101-10-13

Fingerprint

Diffusion barriers
Sheet resistance
Permittivity
Annealing
Copper
Glass
Temperature
Silicates
Surface morphology
Vacuum

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Chen, J-S., Jeng, J. S., & Chang, C. C. (2001). Interfacial characteristics of copper/diffusion barrier/low dielectric constant material systems at elevated temperatures. 266-267. Paper presented at Proceedings of the Fourth International Conference on Materials Engineering for Resources, Akita, Japan.
Chen, Jen-Sue ; Jeng, J. S. ; Chang, C. C. / Interfacial characteristics of copper/diffusion barrier/low dielectric constant material systems at elevated temperatures. Paper presented at Proceedings of the Fourth International Conference on Materials Engineering for Resources, Akita, Japan.2 p.
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abstract = "Thermal reactions of sputtered Cu films on the fluorinated silicate glass (FSG) and organosilicate glass (OSG) layers, with and without TiN or TaN diffusion barrier, were investigated. The sheet resistance, surface morphology, phase formation and compositional depth profile of the mutilayer structures after vacuum annealing at 400-800 °C were examined. It is found that the sheet resistance values of all samples decrease after annealing at 400-600 °C and increase after annealing at 700 or 800 °C. Without the barrier layer, the increase of sheet resistance is accompanied with the dewetting of Cu films. When a TiN/Ti or a TaN/Ta barrier layer is interposed between copper and the dielectric layer, the degree of Cu dewetting is significantly reduced for both systems.",
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Chen, J-S, Jeng, JS & Chang, CC 2001, 'Interfacial characteristics of copper/diffusion barrier/low dielectric constant material systems at elevated temperatures' Paper presented at Proceedings of the Fourth International Conference on Materials Engineering for Resources, Akita, Japan, 01-10-11 - 01-10-13, pp. 266-267.

Interfacial characteristics of copper/diffusion barrier/low dielectric constant material systems at elevated temperatures. / Chen, Jen-Sue; Jeng, J. S.; Chang, C. C.

2001. 266-267 Paper presented at Proceedings of the Fourth International Conference on Materials Engineering for Resources, Akita, Japan.

Research output: Contribution to conferencePaper

TY - CONF

T1 - Interfacial characteristics of copper/diffusion barrier/low dielectric constant material systems at elevated temperatures

AU - Chen, Jen-Sue

AU - Jeng, J. S.

AU - Chang, C. C.

PY - 2001/12/1

Y1 - 2001/12/1

N2 - Thermal reactions of sputtered Cu films on the fluorinated silicate glass (FSG) and organosilicate glass (OSG) layers, with and without TiN or TaN diffusion barrier, were investigated. The sheet resistance, surface morphology, phase formation and compositional depth profile of the mutilayer structures after vacuum annealing at 400-800 °C were examined. It is found that the sheet resistance values of all samples decrease after annealing at 400-600 °C and increase after annealing at 700 or 800 °C. Without the barrier layer, the increase of sheet resistance is accompanied with the dewetting of Cu films. When a TiN/Ti or a TaN/Ta barrier layer is interposed between copper and the dielectric layer, the degree of Cu dewetting is significantly reduced for both systems.

AB - Thermal reactions of sputtered Cu films on the fluorinated silicate glass (FSG) and organosilicate glass (OSG) layers, with and without TiN or TaN diffusion barrier, were investigated. The sheet resistance, surface morphology, phase formation and compositional depth profile of the mutilayer structures after vacuum annealing at 400-800 °C were examined. It is found that the sheet resistance values of all samples decrease after annealing at 400-600 °C and increase after annealing at 700 or 800 °C. Without the barrier layer, the increase of sheet resistance is accompanied with the dewetting of Cu films. When a TiN/Ti or a TaN/Ta barrier layer is interposed between copper and the dielectric layer, the degree of Cu dewetting is significantly reduced for both systems.

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Chen J-S, Jeng JS, Chang CC. Interfacial characteristics of copper/diffusion barrier/low dielectric constant material systems at elevated temperatures. 2001. Paper presented at Proceedings of the Fourth International Conference on Materials Engineering for Resources, Akita, Japan.