TY - JOUR
T1 - Interfacial reactions of the Co/Si1-xGex system
AU - Luo, Jian Shing
AU - Lin, Wen Tai
AU - Chang, C. Y.
AU - Tsai, W. C.
AU - Wang, S. J.
N1 - Funding Information:
This work was sponsored by the Republic of China National Science Council under Contract NSC 85-2215-E-006-17.
PY - 1997/7/1
Y1 - 1997/7/1
N2 - Thermal reactions of Co(200 Å)/Si0.76Ge0.24(1500 Å)/Si and Co(200 Å)/Si0.54Ge0.46(1000 Å)/Si systems in a vacuum of 1-2 ×10-6 Torr were studied. At temperatures above 200°C Ge segregation appeared even though no suicides and/or germanosilicides were formed. At a temperature of 225-550°C Co(Si1-y,Gey) was formed, in which the Ge concentration was deficient. The formation temperatures of CoSi2 in the Co/Si1-xGex systems, where x = 0.24 and 0.46, were above 575°C, being relatively higher than that in the Co/Si system. At temperatures above 500°C the island structure, Ge segregation to the surface of the exposed Si1-xGex films, and the penetration of reacted layer into the Si substrate occurred. At temperatures above 700°C a SiC layer was grown on the film surface. For the Si0.54Ge0.46 films the penetration of the reacted layer into the Si substrate occurred even at 350°C owing to the wave structure of the as-grown Si0.54Ge0.46 films. A Si layer interposed between Co and Si0.76Ge0.24 films is an effective scheme to grow a continuous CoSi2 contact at 550-600°C without inducing Ge segregation and hence the strain relaxation in the Si0.76Ge0.24 films.
AB - Thermal reactions of Co(200 Å)/Si0.76Ge0.24(1500 Å)/Si and Co(200 Å)/Si0.54Ge0.46(1000 Å)/Si systems in a vacuum of 1-2 ×10-6 Torr were studied. At temperatures above 200°C Ge segregation appeared even though no suicides and/or germanosilicides were formed. At a temperature of 225-550°C Co(Si1-y,Gey) was formed, in which the Ge concentration was deficient. The formation temperatures of CoSi2 in the Co/Si1-xGex systems, where x = 0.24 and 0.46, were above 575°C, being relatively higher than that in the Co/Si system. At temperatures above 500°C the island structure, Ge segregation to the surface of the exposed Si1-xGex films, and the penetration of reacted layer into the Si substrate occurred. At temperatures above 700°C a SiC layer was grown on the film surface. For the Si0.54Ge0.46 films the penetration of the reacted layer into the Si substrate occurred even at 350°C owing to the wave structure of the as-grown Si0.54Ge0.46 films. A Si layer interposed between Co and Si0.76Ge0.24 films is an effective scheme to grow a continuous CoSi2 contact at 550-600°C without inducing Ge segregation and hence the strain relaxation in the Si0.76Ge0.24 films.
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U2 - 10.1016/S0254-0584(97)80108-3
DO - 10.1016/S0254-0584(97)80108-3
M3 - Article
AN - SCOPUS:0031119887
VL - 48
SP - 140
EP - 144
JO - Materials Chemistry and Physics
JF - Materials Chemistry and Physics
SN - 0254-0584
IS - 2
ER -